PB031 Search Results

Contextual Info: Preliminary Product Brief May 13, 2003 SDM3G13 ~1.06 Gbits/s—3.3 Gbits/s Serializer and Deserializer Macro 0.13 µm Technology, RX PLL Features • Designed to operate in Ethernet, Fibre Channel, and SONET/SDH (synchronous digital hierarchy) applications.

APP550

Abstract: MPLS ipsec POS-PHY APP530 APP750 "L2TP"
Contextual Info: Product Brief Brief Product May 2003 May 2003 Edge/Access and Multiservice Network Processors: APP550 and APP530 Introduction System Overview Agere Systems is extending its market and technology leadership with the next generation of highly integrated network processors, the APP550

MRC2G13

Abstract: variable frequency drive block diagram
Contextual Info: Advance Product Brief April 2003 MRC2G13 Multirate CDR MRC Serializer/Deserializer Macro Features • Designed for SONET/SDH OC-3, OC-12, and OC-48, and 1 Gigabit Ethernet (GbE) applications. ■ Meets the SONET OC-3/12/48 jitter generation, tolerance, and transfer specifications.

Contextual Info: Preliminary Product Brief September 2003 AGR19K180E 180 W, 1.840 GHz—1.870 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR19K180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS

217-ball

Abstract: Natural Microsystems
Contextual Info: Product Brief May 2003 Ambassador T8102 H.100/H.110 Interface and Time-Slot Interchanger Introduction • Serial TDM bus rate and format conversion between most standard buses. The Agere Systems Inc. Ambassador T8100A device provides a complete solution for time-slot switching and

T8110 H.100

Abstract: T8105 T8100A T8102 T810X T8110 TMXF84622 Agere Ambassador
Contextual Info: Product Brief August 2003 Ambassador T8110 LITE H.100/H.110 Switch Introduction Applications The T8110 LITE is the newest addition to the Ambassador series of TDM switching and backplane interconnect standard products. The T8110 LITE can switch 4096 simultaneous time slots with 32 bidirectional local streams and 32 bidirectional H.100/H.110

WaveLAN

Abstract: OFDM receiver WL54040 WL54240 WL60040 WL64040 wl64040-d "channel estimation"
Contextual Info: Product Brief September 2003 WaveLAN WL64040 Multimode Wireless LAN Baseband 1 Features • Advanced low-power 0.13 µm CMOS technology. ■ Interfaces: — Two serial MMI interfaces. — Synchronous MDI interface. — Serial three-wire control interface.

GR-253

Abstract: ADM 622
Contextual Info: Product Brief November 2003 MARS1G2 P TADM021G2 SONET/SDH 155/622/1244 Mbits/s Add/Drop Data Interface Features • ■ ■ ■ One of the next-generation, system-on-a-chip devices of Agere Systems’ multiapplication and rate solutions MARSTM family of framers.

Contextual Info: Product Brief June 2003 TTIA0110G 10 Gbits/s Transimpedance Amplifier Features • 11.25 GHz bandwidth ■ 1 kΩ transimpedance single-ended ■ Complementary 50 Ω outputs can be ac or dc coupled ■ Equivalent input noise current 1.5 µArms ■ Group delay ±20 ps

Contextual Info: Product Brief May 2003  FW322 06 1394A PCI PHY/Link Open Host Controller Interface Features • 1394a-2000 OHCI link and PHY core function in a single device: — Single-chip link and PHY enable smaller, simpler, more efficient motherboard and add-in card

transistor A114

Abstract: c101 TRANSISTOR transistor C101 AGR18060E AGR18060EF AGR18060EU JESD22-A114
Contextual Info: Preliminary Product Brief May 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for

POS-PHY utopia

Abstract: APP550 APP100 OC-24 OC48
Contextual Info: Product Brief Brief Product October 2003 October 2003 AAL2 SAR Co-Processor APP100 Introduction The Advanced PayloadPlus 100 APP100 is an AAL2 SAR Co-processor designed to work with the APP550/530 Network Processor to allow system designers more function and flexibility in

Contextual Info: ibibulgin SWITCHES Low Profile Brass Chrome Plated Vandal Resistant IIj| #-f %1^f t ^^^§"§% ^^*^ 28mm diameter S.P.C.O. Microswitch 5A, 250V a.c. Front Panel Sealed to IP66 3.5 Max Panel 37.0 A /C 28mm diameter S.P.C.O. Microswitch 5A, 250V a.c. 2.1/1.6

2.4 GHz driver amplifier

Abstract: WaveLAN lucent comcode synergy system synergy system lucent WL60040 WL64040 WL54040 WL54240 2.4 GHz buffer amplifier power amplifier 5 ghz
Contextual Info: Product Brief September 2003 WaveLAN WL54240 Dual-Band Power Amplifier 1 Features . ! Enhanced 0.25 µm bipolar technology SiGe . ! Operating frequency: — 2.4 GHz ~ 2.5 GHz — 5.15 GHz ~ 5.85 GHz ! Dual-band and dual-mode solution. ! Single 3.3 V supply voltage.

Contextual Info: Product Brief May 16, 2003 TAAD08JU2 TAAD T1/E1/J1 ATM Processor, Versions 2.1 and 3.1 Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ System-on-a-chip integrated circuit supports lowspeed ATM access for next-generation wireless base

Contextual Info: Product Brief August 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: Preliminary Product Brief May 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Product Brief December 2003 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide

178rf

Contextual Info: Product Brief August 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor

ATM machine using microcontroller

Abstract: APC 2020 B
Contextual Info: Product Brief May 16, 2003 TAAD08JU21BCL-L3A TAAD Lite T1/E1/J1 ATM Processor, Versions 2.1 and 3.1 Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ System-on-a-chip integrated circuit supports lowspeed ATM access for next-generation wireless base

1.25 GBit-s DC

Abstract: differential ring oscillator
Contextual Info: Preliminary Product Brief May 21, 2003 SDM3G13 ~1.06 Gbits/s—3.3 Gbits/s Serializer and Deserializer Macro 0.13 µm Technology, RX PLL Features • Designed to operate in Ethernet, Fibre Channel, and SONET/SDH (synchronous digital hierarchy) applications.

TAAD08JU2

Abstract: voice control vc 200 RF limited APC 2020 B TR008 AF-VTOA-0113
Contextual Info: Product Brief May 2003 TAAD08JU21BCLSL3A-DB SAR-1K AAL2/AAL5 SAR Engine, Versions 2.1 and 3.1 Features • System-on-a-chip integrated circuit supports ATM adaptation process for next-generation wireless base transmission station (BTS), node B, base station controller (BSC), radio network controller

GR-253

Contextual Info: Product Brief October 2003 MARS622 P-Pro TDAT12622 SONET/SDH 155/622 Mbits/s Data Interface Features • ■ ■ ■ One of the next-generation, system-on-a-chip devices of Agere Systems’ multiapplication and rate solutions MARSTM family of framers. Transmission convergence and SONET/SDH terminal functionality for linear networks.

VOIP phone schematic

Abstract: telephone handset circuit schematic diagram cd 7231 echo cancellation schematic diagram echo audio schematic Acoustic Echo Cancellation sip phone VOIP phone system schematic arm schematic telephone voip CIRCUIT DIAGRAM
Contextual Info: Product Brief April 2003 T8303 Phone-On-A-ChipTM IP Solution Application • T8303 Feature Summary Voice over internet protocol VoIP telephone. Solution Features ■ Complete VoIP telephone solution: — No dependency on external processor. — All of the required software components provided in the form of binary and/or source code.