PARTMARKING AT 5B Search Results

BC807

Abstract: BC808 BC807 SOT23 5AZ BC807-16 BC807-40 spice 80T23 8C808 BC807-16 BC807-25 BC807-40
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM I ISSUE 4- JUNE 1996 PARTMARKING BC807 BC807 BC808 POWER TRANSISTORS I DETAILS - 5DZ BC807-16 - 5AZ BC808 5HZ BC808-16 5EZ E c BC807-25 - 5BZ BC808-25 5FZ BC807-40 - 5CZ 8C808-40 5GZ B COMPLEMENTARY TYPES BC807 - BC817 BC808

bc807

Abstract: BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808-40 BC817 BC818
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – JUNE 1996 PARTMARKING DETAILS BC807 – 5DZ BC807-16 – 5AZ BC807-25 – 5BZ BC807-40 – 5CZ BC807 BC808 BC808 – 5HZ BC808-16 – 5EZ BC808-25 – 5FZ BC808-40 – 5GZ COMPLEMENTARY TYPES BC807 BC808

all ic data

Abstract: 500ma 40v pnp all ic datasheet MV SOT23 PNP POWER TRANSISTOR SOT23 25 V 500mA TRANSISTOR SOT23 PARTMARKING at BC807 BC80716 BC80725
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: BC807 BC808 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -JUNE 1996_ PARTMARKING DETAILS BC807 -5 D Z BC807-16-5A2 BC807-25 - 5BZ BC807-40 - 5CZ _ « / BC808 - 5HZ BC808-16-5EZ BC808-25-5FZ BC808-40 - 5GZ 3 E

Contextual Info: PART OBSOLETE - USE BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – JUNE 1996 PARTMARKING DETAILS BC807 – 5DZ BC807-16 – 5AZ BC807-25 – 5BZ BC807-40 – 5CZ BC807 BC808 BC808 – 5HZ BC808-16 – 5EZ BC808-25 – 5FZ BC808-40 – 5GZ COMPLEMENTARY TYPES

5DZ SOT23

Abstract: BC808 BC80716-5AZ BC807-5DZ
Contextual Info: Not Recommended for New Design Please Use BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – JUNE 1996 PARTMARKING DETAILS BC807 – 5DZ BC807-16 – 5AZ BC807-25 – 5BZ BC807-40 – 5CZ BC807 BC808 BC808 – 5HZ BC808-16 – 5EZ BC808-25 – 5FZ

transistor MV sot23

Abstract: 16 SOT23
Contextual Info: PART OBSOLETE - USE BC807-16 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

Contextual Info: Not Recommended for New Design Please Use BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: Not Recommended for New Design Please Use BC807-16 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS.

FMMD6100

Abstract: FMMD7000 PARTMARKING at 5b DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD6100 FMMD6100 ISSUE 2 - OCTOBER 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15

fmmd7000

Abstract: FMMD6100
Contextual Info: FMMD6100 DIIV Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 0.043 C - 1.10 - D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 L 2.10 N NOM 0.075 0.10 0.0004 0.004 2.50 0.0825 0.0985 NOM 0.95 NOM 0.37

marking code diode a4l

Abstract: A12L A13L IDT7016 IDT7016L IDT7016S
Contextual Info: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial:12/15/20/25/35ns (max.) Low-power operation

quad port ram

Contextual Info: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM ◆ Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:12/15/20/25/35ns max. – Industrial: 20ns (max.) – Military: 20/25/35ns (max.)

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L Integrated Device Technology, Inc. FEATURES: • True D ual-Ported m em ory cells which allow simulta­ neous reads of the sa m e m em ory location • High-speed access — Com m ercial: 25 /3 5 /5 5 n s m ax.

part marking ab

Contextual Info: IDT7015S/L HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM FEATURES: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial: 12/15/17/20/25/35ns (max.)

A12L

Abstract: IDT7015 IDT7015L IDT7015S MIL-PRF38535 NTE 954
Contextual Info: IDT7015S/L HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM FEATURES: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial: 12/15/17/20/25/35ns (max.)

Contextual Info: Integrated Device Technology, Inc. CMOS DUAL-PORT RAM 32K 4K X 8-BIT WITH SEMAPHORE IDT71342SA IDT71342LA FEATURES: DESCRIPTION: • The IDT71342 is an extrem ely high-speed 4 K x8 D u a l-P o rt Static RAM with full on-chip hardware support of semaphore

jsw marking

Abstract: marking code JSW A12L A15R IDT709389 IDT709389L PN100 017-R
Contextual Info: PRELIMINARY IDT709389L HIGH-SPEED 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM F e a tu re s * True Dual-Ported m em ory cells w hich allow sim ultaneous access o f the sam e m em ory location High-speed clock to data access - * ♦ - Data input, address, a nd control registers

L1220

Abstract: 5L25 A12L A13L IDT70T15
Contextual Info: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation – IDT70T16/5L

Contextual Info: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L OBSOLETE PARTS Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.)

5L25

Abstract: A12L A13L IDT70T15
Contextual Info: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation

Contextual Info: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation

Contextual Info: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential

sanyo OS-CON

Abstract: B806 IT 236 schaffner dc swinging choke 20SV68M 6SA150M n1 sot23 N2 SOT23-6 IRC 0805 sanyo CG
Contextual Info: ZXRD1000 SERIES HIGH EFFICIENCY SIMPLESYNC  PWM DC-DC CONTROLLERS DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple