PARTMARKING 6 CC Search Results

BCX55C

Abstract: BCX51 BCX51-10-AC BCX51-16-AD BCX52 BCX52-10-AG BCX52-16-AM BCX53 BCX54 BCX55
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS lee,e9 Ccnnl lAnu.nmc n Gii2 COMPLEMENTARY I TYPE - BCX51 - BCX54 BCX52 - BCX55 c BCX53 - BCX56 PARTMARKING BCX51 DETAILS - -AA BCX52 - AE BCX53-I O- AK E \@ c BCX53-I 6- AL BCX52-16-AM BCX51-16-AD - AH BCX53

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS -1.0 -10 -8 -6 -0.6 -4 -0.4 ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =14Ω D S PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F -0.8 D= ZVP3306F G SOT23 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: BSS66 BSS67 SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS66 - M6 BSS67 - M7 BSS66R- M8 BSS67R - M9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 60 V V CEO 40 V V ebo !cm 6 V 200 mA Continuous Collector Current !c 100 mA Base Current

Contextual Info: BSS82B BSS82C SOT23 PIMP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS BSS82B - CL BSS82C - CM ABSOLUTE MAXIMUM RATINGS C o llec to r-E m itte r V o lta g e E m itter-B ase V o ltag e VALUE U N IT V CBO -6 0 V V CE0 -6 0 V V EBO -5 V -8 0 0 mA 330

ZVN4210

Abstract: resh S10A fet ZVN4210G DSA003737
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)

Contextual Info: BSS80B BSS80C SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS BSS80B - CH BSS80C - CJ ABSOLUTE M A X IM U M RATINGS P A R A M E TE R SYMBOL C ollector-B ase V o lta g e V CBO -6 0 V C o llec to r-E m itte r V o ltag e V CEO -4 0 V E m itter-B ase V o ltag e

AVALANCHE TRANSISTOR

Abstract: FMMT413 SOT23 NPN LED driver 110V laser led DSA003671 avalanche mode transistor
Contextual Info: FMMT413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 2.5 nH Standard SOT23 leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF VCB=10V, IE=0 f=1MHz . SOT23 NPN SILICON PLANAR

BCW61BR

Abstract: BCW61DR BCW61CR BCW61 BCW61A BCW61AR BCW61B BCW61C BCW61D S0T23
Contextual Info: S0T23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 PARTMARKING DETAILS:BCW61A - BA BCW61AR - CA BCW61B - BB BCW61BR - CB BCW61C - BC BCW61CR - CC BCW61D - BD BCW61DR - CD ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL C ollector-B ase V oltag e C o lle c to r-E m itte r V oltag e

10VZ/X/

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424G ISSUE 4 - OCTOBER 1995 FEATURES * 240 Volt BVDS * Extremely low RDS on =4.3Ω * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipment

P-Channel FET 100v

Abstract: PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331
Contextual Info: ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A -2 -4 -6 -8 -10 V I - Drain Current Amps -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics

FET SOT23 60V

Abstract: ML SOT23 ZVP3306F ZVN3306F DSA0037409
Contextual Info: ZVP3306F TYPICAL CHARACTERISTICS -4 -2 -200mA -100mA V Drain Source -6 -2 -4 -6 -8 I - Drain Current Amps ID= -400mA -8 -0.8 -12V -0.6 f=1MHz Ciss 20 Coss 10 Crss 5 / V -10 -20 -30 -40 -50 -60 1 -8 -10 Note:ID=- 0.2A VDS= -20V-40V -60V -4 -6 -8 -10 -12 -14

Contextual Info: FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 80 30 100 3. 20 40 20 40 60 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 V+- =10V - V 175°C 60 Risetime of Base

BAY63

Abstract: BCX71JR J8 BCX71JR sot23 mark ck BCX71JR-J8 h11E BCX71 BCX71G BCX71H BCX71HR
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX71 ISSUE 2 – FEBRUARY 95 PARTMARKING DETAIL – BCX71G – BG BCX71H – BH BCX71J – BJ BCX71K – BK BCX71GR – CG BCX71HR – 6P BCX71JR – J8 BCX71KR – CK ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated .

ZVP2110

Abstract: ZVN2110G ZVN211 ZVP2110G sot223 p-channel DSA0037405
Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110G TYPICAL CHARACTERISTICS VGS= -20V -16V -1.6 - Drain Current Amps g -Transconductance (mS) 250 200 VDS=-10V 150 100 50 BI -1.4 -12V -10V -9V -8V -1.2 -1.0 -0.8 -6V -0.4 -5V -4.5V -4V -3.5V I -2

fmmt417

Abstract: FMMT415 transistor 200V 100MA NPN npn 100n 1a AVALANCHE TRANSISTOR DSA003693 620PF
Contextual Info: FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 80 30 100 3. 20 40 20 40 60 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 V+- =10V - V 175°C 60 Risetime of Base

ZVN2106

Abstract: ZVN2106 equivalent zvn2106 sot223 ZVP2106G ZVN2106G DSA003735
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106G ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS on =2Ω VGS= 10V 9V 3 8V 7V 2 6V 5V 1 4V 3V 1 2 3 4 VDD= 20V 30V 50V 16 VGS-Gate Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)

BCW61DR

Abstract: BCW61CR BCW61BR H12E BCW61AR K3024 BCW60 h22e BCW61A BCW61B
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC

opti 85c

Contextual Info: HIGH-SPEED 3 2 K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM ADVANCED IDT70927S/L FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation

zvn4306

Abstract: ZVN4306G DSA0037379 DSA003737
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306G ISSUE 3 - OCTOBER 1995 FEATURES * Very low RDS ON = .33Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive 12 11 7V ID - Drain Current (Amps) 10 9 8 7 6 5 6V 5V 4 3 2

ZVP2106

Abstract: ZVP2106G ZVN2106G DSA0037403
Contextual Info: ZVP2106G -2.5 -12V -2.0 -10V -1.5 -9V -8V -1.0 -7V -6V -0.5 -5V -4V -10 -20 -30 -40 -50 ID On -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VGS= -20V -18V -14V -3.0 -2.0 -1.8 VGS= -10V -1.6 -1.4 -1.2 -9V -1.0 -8V -0.8 -7V -0.6 -6V -0.4

33a sot223

Abstract: ZVN4310 ZVN4310G DSA0037383
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4310G ISSUE 3 - FEBRUARY 1996 FEATURES * Very low RDS ON = .54Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive ID - Drain Current (Amps) 10 9 RDS(on)-Drain Source On Resistance (Ω)

ZVN4424G

Abstract: ZVN4424 ZVP4424G DSA0037385 10VZ/X/
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 240 Gate-Source Threshold Voltage VGS(th) 0.8 Gate-Body Leakage IGSS

power 22E

Abstract: BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 – FEBRUARY 95 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage

zvn4206

Abstract: zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX.