PART MARKING AVG Search Results

BYM05-400

Abstract: BYM05-100 MBRB1535CT BYM05-200 BYM06-400 BYM10A-1000 MBRB1545CT BYM06-200 MBRB1635 SBLB1030
Contextual Info: Surface Mount Schottky Rectifiers Max. Average Rectified Current Marking Code Part No. lo A SBLB1030CT SBLB1040CT SBLB1030 SBLB1040 MBRB1535CT SBLB1030CT SBLB1040CT SBLB1030 SBLB1040 MBRB1535CT MBRB1545CT MBRB1550CT MBRB1560CT SBLB1630CT SBLB1640CT MBRB1635

Contextual Info: DSA15IM200UC preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 15 A VF = 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15IM200UC Marking on Product: SFMAUI Backside: cathode 1 3 4 Features / Advantages:

a13 marking sot235

Abstract: LBAA marking code mark A15 sot-23-6 voltage regulator marking code LGAA MARKING A11 SOT-23-6 lbaa marking A13, SOT-23-5 MICREL MIC marking sot-23-5 op amp or regulator
Contextual Info: Part Identification and Marking Packaged Devices MIC xxxx -01 A E B Micrel or Standard Prefix Q Qualification Option Q = Class B or S Part Number Option as required Temperature A = –55°C to +125°C B = –40°C to +85°C C = 0°C to +70°C C5 = SC70-5 MM = MSOP MM8

Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number 1 2 3 Marking on Product: SFMAUI Backside: cathode Applications: Features / Advantages:

IXYS DSA 12

Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:

EGL34A

Abstract: EGL34B EGL34C EGL34D EGL34F EGL34G EGL41A EGL41B EGL41C EGL41D
Contextual Info: Leadless Surface Mount Ultra Fast Superectifiers Part No. Max. Avg. Rectified Current CrossReference Peak Peak Fwd. Surge Inverse Current @ 8.3 ms Voltage Superimposed lo A EGL34A EGL34B EGL34C EGL34D EGL34F EGL34G EGL41A EGL41B EGL41C EGL41D EGL41F EGL41G

SML05SC06D3B

Abstract: LE17 MIL-PRF19500 QR217 ULTRA FAST diode 400v 5a
Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery

Contextual Info: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery

Contextual Info: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery

277 hall sensor

Abstract: hall sensor 80 L power supply fan 277 HALL 276 277 FAN 276 hall effect 4 pin hall sensor fan 276 "hall effect" 276 Hall IC 277 hall
Contextual Info: ATC ATS276/277 Complementary Output Hall Effect Latch „ Features „ General Description - On-chip Hall sensor with two different sensitivity and hysteresis settings for ATS276/277 - 3.5V to 20V operating voltage - 400mA avg output sink current - Build-in protecting diode only for chip reverse

sic wafer 100 mm

Contextual Info: CPW2-0650-S006B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier VRRM = 650 V IF AVG = 6 A Features • • • • • • • Qc Chip Outline = 16 nC 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

CPW3-0650-S004B

Contextual Info: CPW3-0650-S004B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 650 V IF AVG = 4 A Features • • • • • • • Qc Chip Outline = 8.5 nC 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

W412

Contextual Info: CPW4-1200S020B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF AVG = 20 A Features • • • • • • • Qc Chip Outline = 130 nC 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

sic wafer

Contextual Info: CPW2-0600S008–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 600 V IF AVG = 8 A Features • • • • • • • Qc Chip Outline = 21 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

Contextual Info: CPW3-0600S003–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 600 V IF AVG = 3 A Features • • • • • • • Qc Chip Outline = 6.7 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

Contextual Info: CPW2-0600S006–Silicon Carbide Schottky Diode Chip Zero Recovery Rectifier VRRM = 600 V IF AVG = 6 A Features • • • • • • • Qc Chip Outline = 17 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

CPWR-0600S001B

Contextual Info: CPWR-0600S001 – Silicon Carbide Schottky Diode Chip Zero Recovery Rectifier VRRM = 600 V IF AVG = 1 A Features • • • • • • • Qc = 3.3 nC Chip Outline 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

Contextual Info: CPW4-1200S005B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF AVG = 5 A Features • • • • • • • Qc Chip Outline = 34.5 nC 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

Contextual Info: CPW3-0600S004–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 600 V IF AVG = 4 A Features • • • • • • • Qc Chip Outline = 8.5 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

CPW2-1200S050

Contextual Info: CPW2-1200S050–Silicon Carbide Schottky Diode Chip Zero Recovery Rectifier VRRM = 1200 V IF AVG = 50 A Features • • • • • • • Qc = 305 nC Chip Outline 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

Cree SiC diode die

Contextual Info: CPW3-0600S002–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 600 V IF AVG = 2 A Features • • • • • • • Qc Chip Outline = 4.8 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

cpw4-1200-s002b

Contextual Info: CPW4-1200S002B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF AVG = 2 A Features • • • • • • • Qc Chip Outline = 15 nC 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

CPW2-0650-S008B

Abstract: S008B
Contextual Info: CPW2-0650-S008B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 650 V IF AVG = 8 A Features • • • • • • • Qc Chip Outline = 21 nC 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

chip diode "sawn on foil"

Contextual Info: CPW2-0650-S010B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 650 V IF AVG = 10 A Features • • • • • • • Qc Chip Outline = 25 nC 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation