PAL22V10 DIP Search Results

PD3024

Contextual Info: COM’L : -7/10/15 MIL: -12/20 PAL22V10 Family, AmPAL22V10/A Advanced Micro Devices 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • ■ ■ Global asynchronous reset and synchronous preset for Initialization Power-up reset for Initialization and register

PAL22V10

Abstract: CD3024 PD3024 pAL programming Guide PAL22V10-7PC CFL024 amd programmers guide PAL22V10-12 PAL22V10 DIP signal path designer
Contextual Info: COM’L: -7/10/15 MIL: -12/20 Advanced Micro Devices PAL22V10 Family, AmPAL22V10/A 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns propagation delay and 91 MHz fMAx external ■ 10 Macrocells programmable as registered or

Contextual Info: PAL22V10 Family, AmPAL22V10/A Advanced Micro Devices 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • ■ ■ As fast as 7.5 ns propagation delay and 91 MHz fMAx 10 macrocells programmable as registered or combinatorial, and active high or active low to

pal22v10

Abstract: AMPAL22V10APC
Contextual Info: COM’L :-7/10/15 MIL: -12/20 a Advanced Micro Devices PAL22V10 Family, AmPAL22V10/A 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns propagation delay and 91 MHz fMAx external ■ 10 Macrocells programmable as registered or

Contextual Info: COM’L :-7/10/15 a MIL: -12/20 Advanced Micro Devices PAL22V10 Family, AmPAL22V10/A 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns propagation delay and 91 MHz fMAx external ■ 10 Macrocells programmable as registered or

PAL22V10

Abstract: TC817 CD3024 PD3024 ampal22v10 PAL22V1D-12J2D
Contextual Info: a MIL: -12/20 COM’L: -7/10/15 Advanced Micro Devices PAL22V10 Family, AmPAL22V10/A 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns propagation delay and 91 MHz fMAX external ■ 10 Macrocells programmable as registered or

PAL22V10

Contextual Info: COM’L PAL22V10-7 7.5 ns 24-Pin TTL Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ 7.5 ns propagation delay and 91 MHz fMAx 10 macrocells programmable as registered or combinatorial, and active high or active low to

SR 13003

Abstract: SI 13003 13003 PAL22V10-12 PAL22V10 X 13003 13003 h pal 005a pal 007a PC 13003
Contextual Info: COM’L : -7/10/15 MIL: -12/20 PAL22V10 Family, AmPAL22V10/A Advanced Micro Devices 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns propagation delay and 91 MHz Im a x ■ 10 macrocells programmable as registered or combinatorial, and active high or active low to

pal 007a

Abstract: dr 13003 si 13003 PAL22V10 13003 111 x 13003 circuit al 13003 PAL 002a pal 010a PC 13003
Contextual Info: ADV MICRO P L A / PLE/ ARRAYS EßE 0E575Eb OQETSSS 3 ~\ T -46-I9-07 PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 IAMDE Advanced Micro Devices T—46—19—13 24-pln TT L/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz

palce22v10 programming guide

Contextual Info: COM’L MIL PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 Advanced Micro Devices 24-pln TTL/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz fMAX ■ Low-power EE CMOS versions ■ 10 m acroceils program m able as registered or

palce22v10 programming guide

Abstract: PAL22V10-12/BKA
Contextual Info: ADV MICRO P L A / PLE/ ARRAYS EßE PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 0E575Eb OQETSSS 3 IAMDE ~\ T-46-I9-07 T—46—19—13 Advanced Micro Devices 24-pln TT L/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz

RAL22V10

Abstract: PALCE22V100-25 pal22v10
Contextual Info: COM’L MIL Cl PAL22V10-10/15 AmPAL22Vl 0/A PALCE22V10H-15/25/Q-25 Advanced Micro Devices 24-pln TTUCMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz fM AX ■ Low-power EE CMOS versions ■ 10 m acrocells program m able as registered o r

pal22v10

Abstract: al22v10 AMPAL22V10 5962-86053013X
Contextual Info: Am PAL22V 10 24-Pin IMOX Programmable Array Logic PAL Distinctive Characteristics • Second-generation PAL device architecture • • • • Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output

pal22v10

Abstract: stag ppz
Contextual Info: ADV MICRO PLA/PLE/ARRAYS 4ÔE J> COM’L 025752b DG3207Ö T -<3 P A L 2 2 V 1 0 -7 7.5 ns 24-Pin TTL Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ 7.5 ns propagation delay and 91 MHz fMAX 10 macrocells programmable as registered or

1B5 zener diode

Abstract: 2b8 zener diode Zener Diode BA11 Zener Diode BA13 2A3 zener diode 1B2 zener diode 1B6 zener diode 1a7 sot-23 diode ba11 2B1 zener diode
Contextual Info: 1 2 3 4 5 Table of Contents Page 1: Page 2: Page 3: Page 4: Page 5: Page 6: Page 7: Page 8: Page 9: Page 10: A Cover Sheet COVER.SCH Main Board Connectors (CONNECTOR.SCH) Ethernet Page 1 (ETHERNET1.SCH) Ethernet Page 2 (ETHERNET2.SCH) ISDN S Interface (ISDN_S.SCH)

AMPAL22V10

Contextual Info: A m P A L 2 2 V 1 0-1 5 24-Pin IM O X III7“ Program m able Array Logic P R E L IM IN A R Y Distinctive Characteristics • • • • • • • • • 15-ns perform ance Increased logic pow er — up to 22 inputs and 10 outputs Increased product term s — average 12 per output

GAL Gate Array Logic

Abstract: gal22v10 application note gal22v10 application gal22v10
Contextual Info: GAL22V10 EH National m M Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

Contextual Info: m GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOStm g a l devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

gal22v10 application

Abstract: GAL22V10 PAL22V10 QAL22V10-30L
Contextual Info: PRELIMINARY GAL22V10 yw \ National mjM Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOStm GAL devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

QAL22V10-30L

Abstract: PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL22V10 GAL Gate Array Logic
Contextual Info: GAL22V10 NATL SEMICOND LS0112b b3E D MEMORY DGb7b45 «NSCB National mm Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per­ formance CMOS process with electrically erasable floating

GAL22CV10

Abstract: ark 3299 GAL22CV10-10
Contextual Info: October 1993 GAL22CV10-10 24-Pin Generic Array Logic Family Features Unique test circuitry and reprogrammable cells allow com­ plete AC, DC, cell, and functionality testing during manufac­ ture. Therefore, NSC guarantees 100% field programmabili­ ty and functionality of NSC GAL devices. In addition, a

Contextual Info: .% n n m n f A M H .S en * » n d u cto rc CMOS Programmable Electrically Erasable Logic Device Product Preview PEEL22CV10Z-15 Features — Variable product term distribution 8 to 16 per output lor greater logic flexibility — Independently programmable 12-configuration

SSI 091

Abstract: AmPAL22V10 PAL22V10
Contextual Info: GOUL D INC/ GO U L D A II I •> GOULD AMI«Semiconductors 4DE D MDSSIlb ODIBODH ? « A M I CMOS Programmable Electrically Erasable Logic Device ProductPreview PEELra22GY1Q-15 ~ \ T -4 6 -1 9 -0 7 Features — Variable product term distribution 8 to 16 per

EP600PC

Abstract: gal22v8 GAL22CV10 EP600PC-3 DPLD610-25 EP600DC-3 PPLD610-25 ep600pc-45 EP910PC-40 EP900PC
Contextual Info: PinPin-Compatible PEEL Array Cross Reference Package, speed and power options Altera EP312 EP600PC EP600PC-45 EP600PC-3 EP600DC* EP600DC-3* EP610PC-35 EP610PC-30 EP610PC-25T EP610PC-25 EP610PC-20T EP610PC-20 EP610PC-15T EP610PC-15 EP610PI-30 EP610DC-35*