2SK1103
Abstract: XN1D873
Contextual Info: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter
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UN1210
Abstract: XN1210
Contextual Info: Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings 1 : Collector Tr1 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings
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UN1112
Abstract: UN1212 XN1A312
Contextual Info: Composite Transistors XN1A312 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 ● Parameter (Ta=25˚C) Ratings Unit Collector to base voltage
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UN1210
Abstract: UNR1210 XN01210 XN1210
Contextual Info: Composite Transistors XN01210 XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings Unit
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2SB709A
Abstract: 2SD601A XN1601
Contextual Info: Composite Transistors XN1601 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 3 0.65±0.15 1 2 0 to 0.1 2SB709A+2SD601A +0.1 +0.2 1.1 -0.1 ● 0.8
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TRANSISTOR C 460
Abstract: 2SB709A 2SD601A XN1B301
Contextual Info: Composite Transistors XN1B301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 2 : Collector (Tr2)
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2SB709A
Abstract: 2SD601A XN1C301
Contextual Info: Composite Transistors XN1C301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 2 : Collector (Tr2)
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UN111H
Abstract: XN111H
Contextual Info: Composite Transistors XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN111H x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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2SD814
Abstract: XN1507
Contextual Info: Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD814 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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9s MARKING
Abstract: UN1111 XN1111
Contextual Info: Composite Transistors XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1111 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1216
Abstract: UN1216
Contextual Info: Composite Transistors XN1216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1216 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1110
Abstract: XN1110
Contextual Info: Composite Transistors XN1110 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1110 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1212
Abstract: XN1212 SC74A EIAJ-SC74A
Contextual Info: Composite Transistors XN1212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1212 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1210
Abstract: XN2210
Contextual Info: Composite Transistors XN2210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1210 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1212
Abstract: XN2212
Contextual Info: Composite Transistors XN2212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1212 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1211
Abstract: XN2211
Contextual Info: Composite Transistors XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1211 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1217
Abstract: XN1217 9p marking
Contextual Info: Composite Transistors XN1217 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1217 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1211
Abstract: UN1211
Contextual Info: Composite Transistors XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1211 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1215
Abstract: XN1215
Contextual Info: Composite Transistors XN1215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1215 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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2SC4561
Abstract: XN1509 4600ic
Contextual Info: Composite Transistors XN1509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC4561 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1112
Abstract: XN1112
Contextual Info: Composite Transistors XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1112 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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2SK621
Abstract: XN1872
Contextual Info: Composite Transistors XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK621 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06 +0.1
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UN1115
Abstract: XN1115
Contextual Info: Composite Transistors XN1115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1115 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1216
Abstract: XN2216
Contextual Info: Composite Transistors XN2216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1216 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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