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SMNS405A

Abstract: cms405 CMS408 CMS406
Contextual Info: CMS405, CMS406 4 MEGABYTE CMS407, CMS408 2 MEGABYTE DRAM MEMORY CARDS SMNS405A-JUNE1991-REVISED JANUARY 1993 * Credit Card Size 85.6 mm x 54 mm x 60-PIN MEMORY CARD (CONNECTOR VIEW 3.4 mm) Single 5-V Power Supply (±5% Tolerance) * Enhanced Page Mode Operation

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

BE423

Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

TC5117445CSJ

Contextual Info: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The

TL494

Abstract: tl494 pwm circuits sg3524 pwm power supply TL496 UC284X Power Supply Controllers PWM Controllers Controllers TL497A TL499A
Contextual Info: Contents Page PWM Controllers, DC-to-DC Converters 4-2 SG2524 SG3524 TL494 TL496 TL497A TL499A TL594 TL598 TL1451A TL1454 Regulating Pulse-Width Modulators . 4 -3 Regulating Pulse-Width Modulators . 4-3

TC51V18160

Contextual Info: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC51V18160 C S / CFTS - 60 TOSHIBA TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V1S160CJS-CFTS is the fast page dynamic R A M organized 1,048,576 words by 16 bits.

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

TC514265DJ

Abstract: TC514265D TC514265 SOJ40-P-400
Contextual Info: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­

Contextual Info: MG600Q1US41 HIGH POWER SW ITCHING APPLICATIONS. MOTOR CO N TRO L APPLICATIONS. High Input Impedance H ighspeed : tf= 0.5/iS Max. Low Saturation Voltage : V cE (sat) = 4.0V (Max.) Enhancement-Mode : TOSHIBA 2-109E1A Outline (See page 3 for the device outline)

1AM F

Abstract: TA31145FN
Contextual Info: IF DETECT ICs TENTATIVE DATA FM IF DETECTION 1C FOR PAGER B uilt-in 2nd FEATURES • B u ilt-in RSSI fu n c tio n To p re v e n t in p u t o ve rlo a d , RSSI o u tp u t co n tro ls RF a tte n u a to r • B u ilt-in 2nd M IX fo r d o u b le conversion m e th o d

TC5117405

Contextual Info: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are

Contextual Info: ERRATA TO TH E 1986 MOS M EM ORY D ATA BOOK SMYD006 * page 4 -1 7 • Replace th e la st item on th e fe a tu re lis t w ith th e fo llo w in g sta te m e n t: "A v a ila b le w ith M IL -S T D -8 83C P rocessing w ith S ( - 5 5 ° C to 1 0 0 °C I Tem pe ratu re R ang e"

44460D

Abstract: BK36C-80
Contextual Info: TM124MBK36C, TM124MBK36S1048576 BY 36-BIT TM248NBK36C, TM248NBK36S 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS138B - MARCH 1992 - REVISED JUNE 199S Enhanced Page Mode Operation With CAS-Before-RAS CBR , RAS-Only, and Hidden Refresh Presence Detect Performance Ranges:

TC5118160CJ

Abstract: tc5118160 TC5118160c
Contextual Info: TOSHIBA TC5118160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5118160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118160CJ/CFT utilizes TOSHIBA’SCMOS silicon gate process technology as well as advanced

Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

s27c64

Abstract: TMS27C64JL
Contextual Info: TM S27C64 65,536-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TM S27PC64 65,536-BIT PROGRAMMABLE READ-ONLY MEMORY NOVEM BER 1 9 6 5 - REVISED APRIL 1 9 8 8 This Data Sheet is Applicable to A ll TMS27C64s and TMS27PC64s Symbolized with Code " A " as Described on Page 12.

44-800-p

Abstract: 44800P PIN DIAGRAM of IC AD 524 IN2045
Contextual Info: TMS44800, TMS44800P 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS480B-AUGUST1992-REVISED DECEMBER 1992 This data sheet is applicable to all TMS44800/Ps symbolized with Revision“B" and subsequent revisions as described on page 22. * Organization . . . 524 288 x 8

Contextual Info: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

TM124EAD9C

Abstract: TM124EAD9B-6
Contextual Info: TM124EAD9B, TM124EAD9C 1 048 576-WORD BY 9-BIT DYNAMIC RANDOM-ACCESS MEMORY MODULES SMMS191 — JANUARY 1991 This Data Sheet is Applicable to A ll TM124EAD9BS and TM124EAD9CS Symbolized with Revision "B" and Subsequent Revisions as Described on Page 6-44.

Augat lsg

Abstract: LSG AUGAT augat tyco 500 series AUGAT 14 SOCKET LSG Tyco augat 500 AUGAT SOCKET
Contextual Info: PROPERTY OF TYCO ELECTRONICS CUST. DWG. NO. 1437532-1 REV. 99 3 MARKED UP PRINT K. WRIGHT 5/8/03 5 A G X X D 500 SERIES POS ITIONS L. .600 Î 24 (.400 t) PAGE VA /3\ 4\/3\ * POSITIONS INDICATED ABOVE TO BE MILLED PER DIM. "B" AS SHOWN ON PAGE 6. B . >

Contextual Info: AC ' 108-71023 1 Ì I J C O / Electronics / JiC Revision : 0 SR10-0052-01 DESIGN OBJECTIVES Coax insert cable Connectors P/N 1392019-1 P/N 1392020-1 Coax inserts cable connectors Design Objectives 108-71023 Page 1 of 4 M * 1 0 8 -7 1 0 2 3 1 ii^ C O /E lectronics / JiC

transistors bipolar

Abstract: japan brt
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1130MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TLRMH30TP F Category: Optical Semiconductor Devices/Visible LEDs/High-Brightness LED Lamps(Φ5)

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6026CT Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single