PAD LCC28 Search Results

Contextual Info: ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY FUJITSU M B M 100484A -8 August 1988 Edition 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage

Contextual Info: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484AAugust 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY The Fujitsu MBM 10484A is fu lly decoded 16384-bit ECL read/write random access memory designed fo r high-speed scratch pad, control and buffe r storage

Contextual Info: FUJITSU MICROELECTRONICS 3 7 4 cj7b2 0Qafl3bS A 23E D FU JITSU MBM10484A-10 August 1988 Edition 2.0 T -^ t-2 ^ -0 8 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10484A is fully decoded 16384-bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage

Contextual Info: ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY F U JIT SU M BM 1 0 0 4 8 4 A -8 August 1988 E d itio n 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage

Contextual Info: FU JITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY M BM 10484A-10 A u g u st 1 9 88 E d itio n 2 .0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM O RY The Fujitsu MBM 10484A is fully decoded 16384-bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage

Contextual Info: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY M BM 10484A -8 August 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY T h e F u jits u M B M 1 0 4 8 4 A is f u lly decoded 1 6 3 8 4 -b it E C L re a d /w rite random access m e m o ry designed fo r high-speed scratch pad, c o n tro l and b u ffe r storage

1403A

Abstract: transistor 1403A LTC1403A LTC1403CMSE LTC1403IMSE
Contextual Info: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation 2.5V Internal Bandgap Reference can be Overdriven

1403A

Abstract: 74ACTxx transistor 1403A LTC1403A
Contextual Info: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation –40°C to 125°C Guaranteed Operation

SN1403

Abstract: 1403A transistor 1403A LTC1403A LTC1403CMSE LTC1403IMSE b00 sot23 014si 74ACTxx series
Contextual Info: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation 2.5V Internal Bandgap Reference can be Overdriven

Contextual Info: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation –40°C to 125°C Guaranteed Operation

Contextual Info: PROGRAMMABLE FU JITSU SCHOTTK Y 16384-BIT MB 7134E-W READ ONLY MEMORY November 1985 Edition 1.0 SCHOTTKY 16384-BIT DEAP PROM 4096 WORDS x 4 BITS This Fujitsu MB 7T34-W is high speed Schottky TT L electrically field pro­ grammable read only memory organized as 4096 words by 4 bits. With threestate outpus on the MB 7134-W, memory expansion is simple.

diode.18

Abstract: IRHQ57110 Q 371 Transistor IRHQ53110 IRHQ54110 IRHQ58110 PAD LCC28 46a -30 volt regulator lcc 28 socket 1000K
Contextual Info: PD-94211D RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57110 100V, Quad N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHQ57110 Radiation Level RDS(on) 100K Rads (Si) 0.27Ω ID 4.6A IRHQ53110 300K Rads (Si) 0.27Ω 4.6A IRHQ54110 500K Rads (Si)

Contextual Info: PD-94211D RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57110 100V, Quad N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHQ57110 Radiation Level RDS(on) 100K Rads (Si) 0.27Ω ID 4.6A IRHQ53110 300K Rads (Si) 0.27Ω 4.6A IRHQ54110 500K Rads (Si)

Contextual Info: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the

IRHQ563110

Abstract: IRHQ567110
Contextual Info: PD - 94057B IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω

IRHQ563110

Abstract: IRHQ567110 lcc 20 test socket
Contextual Info: PD-94057C IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω

IRHQ6110

Abstract: IRHQ63110
Contextual Info: PD - 91781A IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si)

IRHQ6110

Abstract: IRHQ63110
Contextual Info: PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si)

IRHQ563110

Abstract: IRHQ567110
Contextual Info: PD - 94057 IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω

Contextual Info: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω

Contextual Info: PD-94057C IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω

LAH3

Abstract: LAH4 MA9000 Inverter INVC fpk6
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’

figure of full adder circuit using nor gates

Abstract: tristate buffer cmos LAH3 carry select adder 16 bit using fast adders full adder circuit using nor gates microprocessor radiation hard M2909
Contextual Info: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ MA9000 Series

full adder circuit using nor gates

Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
Contextual Info: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the