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IRHQ6110 Abstract: IRHQ63110 Contextual Info: PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si)	Original	91781b irhq6110 lcc-28 irhq63110 +2mll-std-750 -100v	PDF

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IRHQ6110

Abstract: IRHQ63110
Contextual Info: PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si)

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91781b irhq6110 lcc-28 irhq63110 +2

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