PACKAGES TYPES FOR MOSFET Search Results

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

K1118

Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
Contextual Info: High Voltage MOSFETs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all possible designs.

smd transistor 351A

Abstract: 1A smd mosfet smd 351a G3VM-401A AM164 photo LED G3VM-355J G3VM-2L smd 4n G3VM-xn
Contextual Info: RELAYS SOLID STATE RELAYS MOSFET OUTPUT EXCEL type EPR A range of economical solid state, MOSFET output relays offering a wide choice of contact forms load voltages and package types. These relays offer an input to output isolation voltage of 3750Vac 1500Vac for SOP packages , fast turn times, and low resistances. All relays can be

PHP45NQ10TA

Abstract: Ph9030l PMV213SN PHD66NQ03LT BUK9507-30B PHD78NQ BSH103 BUK95180-100A PSMN2R8-40PS BSH114
Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

Transistor SMD SOT363 SC70

Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
Contextual Info: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved

complementary MOSFET 2sk

Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
Contextual Info: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.

PQMD12

Contextual Info: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot

injector MOSFET driver

Abstract: BUK9507-30B solenoid injector injector driver buk9535 sot669 BUK7909-75AIE BUK9214-30A BUK9Y19-55B diesel solenoid
Contextual Info: Power MOSFETs for Automotive Applications Performance, quality, reliability Automotive Power MOSFETs NXP offers a highly flexible approach to power design for automotive systems. NXP is a global leader in the area of discrete power MOSFETs for automotive systems. An in-depth understanding of automotive

PH9025L

Abstract: sot669 footprint PH2530L PH2030AL LFPAK footprint PCI compact PCB footprint lfpak sot669 package ph43 PH6530
Contextual Info: LFPAK MOSFETs for computing applications Compact, high performance power for notebook and desktop PC, graphics cards and servers Part of an ever expanding portfolio that combines innovative packaging and TrenchMOS technologies NXP’s latest MOSFETs offer excellent power performance in the compact,

to220 pcb footprint

Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
Contextual Info: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.

charging ic laptop motherboard

Abstract: ic laptop motherboard PMV213SN PMV117EN PMV31XN PMV45EN PMV56XN PMV60EN battery controller NXP PMV40UN
Contextual Info: NXP 100-, 30-, and 20-V N-channel MOSFETs PMVseries in SOT23 packages Ultra-small µTrenchMOS MOSFETs in a SOT23 package Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny SOT23 packages, are an ideal choice for

sot669 package

Abstract: LFPAK footprint 7.5B 35 BUK7Y80-150B BUK9Y19-55B SOT669 BUK7Y13-40B BUK9Y11-30B BUK9Y14-40B NXP MOSFETs
Contextual Info: HPA TrenchMOS in LFPAK MOSFETs that pack-a-punch in automotive power Delivering the ultimate in performance, NXP’s new range of High Performance Automotive HPA MOSFETs in the compact, thermally enhanced LFPAK provides reduced on-resistance along with improved ruggedness and thermal performance. All this in a very small package

BUK763R0-55C

Abstract: SOT404 BUK753R0-55C BUK752r0 BUK752R3-40C BUK752R7-30B BUK753R1-40B BUK754R0-55B BUK952R4-40C BUK952R8-30B
Contextual Info: High-current testing of SOT78 and SOT404 Automotive Power MOSFET applications Increased automotive power requirements have driven the need for improved currenthandling capabilities. Recent process technology advances have addressed this requirement and extensive testing by NXP has shown that, under certain circumstances, the maximum

Infineon technology roadmap for mosfet

Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Contextual Info: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial

Contextual Info: AN11304 MOSFET load switch PCB with thermal measurement Rev. 1 — 25 January 2013 Application note Document information Info Content Keywords Load switch, MOSFETs, DFN2020MD-6 SOT1220 , DFN2020-6 (SOT1118); DFN3333-8 (SOT873-1), thermal resistance Abstract

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091 2N4091 2N4856 MPF971
Contextual Info: Motorola offers a line of field-effect transistors that encom­ passes the latest technology and covers the full range of FET applications. Included here is a wide variety of junction FETs, MOSFETs with P- or N-channel polarity with both single and dual gates and TMOS FETs. These FETs include devices de­

sot669 footprint

Abstract: PSMN1R1-25YLC PSMN3R7-25YLC 25YLC
Contextual Info: NextPower MOSFETs Smaller, Faster, Cooler NextPower 25 V & 30 V MOSFETs in LFPAK Power-SO8 NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAK As a power design engineer, compromise is never far from your mind. Do I choose a low RDS(on) device and accept the

BUK9K85-80E

Abstract: LFPAK56D BUK9K25-40E BUK7K8R7-40E BUK9K13-60E BUK7K18-40E BUK9K5R1-30E BUK9K21-80E FLOTHERM MOSFET LFPAK56
Contextual Info: NXP Automotive LFPAK56D MOSFETs High Reliability Dual Power-S08 for Automotive Applications LFPAK56D takes the initiative to further reduce the footprint size of the typical automotive electronics module. The migration from DPAK to LFPAK56 Power-S08 now continues to

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . AUTOMOTIVE GRADE Vishay – Overview of Automotive Grade Products Overview of Automotive Grade Products AUTOMOTIVE GRADE PRODUCTS Discrete Semiconductors • MOSFETs • Optoelectronics Passive Components • Capacitors

EC-Q101

Abstract: Brushless 3 Phase key automotive BUK7514-60 BUK9E4R4-80E BUK7E1R6-30E BUK9E2R8-60E
Contextual Info: Advanced MOSFET technology from the Automotive Power experts 95 new MOSFETs in D2PAK, I2PAK and TO-220 Everything we know is in this technology NXP is making a significant expansion to its automotive MOSFET product portfolio. Its new automotive grade-technology, Trench 6, brings new levels of performance and manufacturing excellence to an already

BL8305A en

Abstract: 13005 ld1 13005 ballast ballast with 13005 sd 13005 power supply IRF830 APPLICATION 13005 mosfet transistor 13005 Window Discriminator SEC 13005
Contextual Info: BL8305A BALLAST CONTROL IC The ballast control IC BL8305A is an improved version of the BL8301. The BL8305A provides more functionality and is easier to use than previous IC BL8301. The BL8305A optimizes the compatibility of driving MOSFET half-bridge MHF

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

HEXFET Power MOSFET designer manual

Abstract: GZ150 W4006 pick and place robot ESD conveyor belt HEXFET Power MOSFET designer manual an AN-955 FR - ACTIVATOR AN-956A oc sot89 mosfet
Contextual Info: A N -956A Using Surface-Mount Devices HEXFET is a tradem ark o f International Rectifier by W. Parrish Summary Surface-M ount P ack a g es S urface-m ount technology is gaining increasing acceptance over through-hole m ounting. International Rectifier offers HEXFET power MOSFETs, high

Q1/2N3055 RCA

Contextual Info: Chapter 9 Using Analog CMOS Arrays to Create Current Sources 9.1 RCA pioneered CMOS Once the first stable MOSFETs had been created in the early 1960s by RCA researchers Steve Hofstein and Fred Heiman, and by Dr. Frank Wanlass at Fairchild Semiconductor, it opened the door to researching and developing other types of MOS