PACKAGES TYPES FOR MOSFET Search Results

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

K1118

Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
Contextual Info: High Voltage MOSFETs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all possible designs.

smd transistor 351A

Abstract: 1A smd mosfet smd 351a G3VM-401A AM164 photo LED G3VM-355J G3VM-2L smd 4n G3VM-xn
Contextual Info: RELAYS SOLID STATE RELAYS MOSFET OUTPUT EXCEL type EPR A range of economical solid state, MOSFET output relays offering a wide choice of contact forms load voltages and package types. These relays offer an input to output isolation voltage of 3750Vac 1500Vac for SOP packages , fast turn times, and low resistances. All relays can be

"thermal via" PCB D2PAK

Abstract: JESD24-3 "thermal via" PCB D-PAK so8 pcb pattern double sided pcb, thermal via powersi so8 footprint AN-994 thermal PCB D2PAK IRF3706S
Contextual Info: Evaluation of Power MOSFET Thermal Solutions for Desktop and Mobile Processor Power Tim McDonald and John Ambrus International Rectifier Corporation 233 Kansas Street El Segundo, CA 90245 USA Tmcdona1@irf.com, jambrus1@irf.com as presented at PCIM China, March 2002

PHP45NQ10TA

Abstract: Ph9030l PMV213SN PHD66NQ03LT BUK9507-30B PHD78NQ BSH103 BUK95180-100A PSMN2R8-40PS BSH114
Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

PHD78NQ

Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

IXAN0021

Abstract: MOSFET Based Chopper IXAN0022 VWM350-0075P FMM150-0075P IXUC100N055 IXUC200N055 VMM1500-0075P trench relay MOSFET Based Chopper applications
Contextual Info: IXAN0021 New Trench Power MOSFETs in Isolated Packages Abstract Andreas Lindemann IXYS Semiconductor GmbH Postfach 1180, D { 68619 Lampertheim www.IXYS.net This paper presents a new family of power semiconductor components with low voltage trench MOSFETs in isolated packages: MOSFET and packaging technologies are brie y

magnatec mosfets

Contextual Info: Semeiab Group Operating Divisions Semeiab - four core divisions - Power, Military-Aerospace, RF and Opto Diamond Enhanced MOSFETs Semeiab is the world's first manufacturer to offer diamond enhanced heatsinks for power MOSFETs, using a unique patented process. This

Transistor SMD SOT363 SC70

Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
Contextual Info: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved

complementary MOSFET 2sk

Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
Contextual Info: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.

Contextual Info: Philips Semiconductors’ new SiliconMAXTM power MOSFET range - a next generation development of the company’s advanced TrenchMOS technology - brings the benefits of ultra-low RDS on and high-speed switching to applications requiring transistors with voltage

PQMD12

Contextual Info: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot

injector MOSFET driver

Abstract: BUK9507-30B solenoid injector injector driver buk9535 sot669 BUK7909-75AIE BUK9214-30A BUK9Y19-55B diesel solenoid
Contextual Info: Power MOSFETs for Automotive Applications Performance, quality, reliability Automotive Power MOSFETs NXP offers a highly flexible approach to power design for automotive systems. NXP is a global leader in the area of discrete power MOSFETs for automotive systems. An in-depth understanding of automotive

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

to220 pcb footprint

Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
Contextual Info: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.

Loctite 3567

Abstract: underfill Kester FDZ202P fbga Substrate design guidelines reflow hot air BGA fine BGA thermal profile reball INTEL underfill SMT
Contextual Info: Application Note 7001 March 2002 Guidelines for Mounting Fairchild’s BGA Packages Dennis Lang, Applications Engineer Introduction The development of MOSFETs in BGA packages was a technology breakthrough, producing a device that combined excellent thermal transfer characteristics, high-current handling capability, ultra-low profile

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

BUK2114

Abstract: IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
Contextual Info: Power Management Power Management 189 Automotive MOSFETs General Purpose Automotive GPA TrenchMOS types in bold red represent new products 190 VDS RDS(ON) @VGS ID (max) SC73 (SOT223) (V) (mΩ) (V) 30 30 5 5 10 5 @ 25°C (A) 75 75 30 13 10 55 BUK6213-30A

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

charging ic laptop motherboard

Abstract: ic laptop motherboard PMV213SN PMV117EN PMV31XN PMV45EN PMV56XN PMV60EN battery controller NXP PMV40UN
Contextual Info: NXP 100-, 30-, and 20-V N-channel MOSFETs PMVseries in SOT23 packages Ultra-small µTrenchMOS MOSFETs in a SOT23 package Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny SOT23 packages, are an ideal choice for

underfill

Abstract: rework reflow hot air BGA Loctite PCB design for very fine pitch csp package thick bga die size Loctite 3567 Intel BGA Solder FDZ202P Fairchild, BGA fbga Substrate design guidelines
Contextual Info: Application Note 7001 March 2004 Guidelines for Using Fairchild’s BGA Packages Dennis Lang, Applications Engineer Introduction The development of MOSFETs in Chip Scale Package BGA packages was a technology breakthrough, producing a device that combined excellent thermal transfer characteristics, high-current handling

equivalent L6565

Abstract: AP-600 STW7NK90Z TO220 PMOS L6565 STD1LNK60Z-1 STQ2HNK60ZR-AP STQ2NK60ZR-AP STQ3NK50ZR-AP STS1HNK60
Contextual Info: Power MOSFETs for metering High-voltage power MOSFETs the optimal choice for metering STMicroelectronics offers a wide selection of high voltage power MOSFETs for power-meter designers who require an efficient solution for either single or three-phase meters.

sot669 package

Abstract: LFPAK footprint 7.5B 35 BUK7Y80-150B BUK9Y19-55B SOT669 BUK7Y13-40B BUK9Y11-30B BUK9Y14-40B NXP MOSFETs
Contextual Info: HPA TrenchMOS in LFPAK MOSFETs that pack-a-punch in automotive power Delivering the ultimate in performance, NXP’s new range of High Performance Automotive HPA MOSFETs in the compact, thermally enhanced LFPAK provides reduced on-resistance along with improved ruggedness and thermal performance. All this in a very small package

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters