PACKAGES TYPES FOR MOSFET Search Results

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

PHP45NQ10TA

Abstract: Ph9030l PMV213SN PHD66NQ03LT BUK9507-30B PHD78NQ BSH103 BUK95180-100A PSMN2R8-40PS BSH114
Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

complementary MOSFET 2sk

Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
Contextual Info: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.

PH9025L

Abstract: sot669 footprint PH2530L PH2030AL LFPAK footprint PCI compact PCB footprint lfpak sot669 package ph43 PH6530
Contextual Info: LFPAK MOSFETs for computing applications Compact, high performance power for notebook and desktop PC, graphics cards and servers Part of an ever expanding portfolio that combines innovative packaging and TrenchMOS technologies NXP’s latest MOSFETs offer excellent power performance in the compact,

to220 pcb footprint

Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
Contextual Info: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.

charging ic laptop motherboard

Abstract: ic laptop motherboard PMV213SN PMV117EN PMV31XN PMV45EN PMV56XN PMV60EN battery controller NXP PMV40UN
Contextual Info: NXP 100-, 30-, and 20-V N-channel MOSFETs PMVseries in SOT23 packages Ultra-small µTrenchMOS MOSFETs in a SOT23 package Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny SOT23 packages, are an ideal choice for

LFPAK footprint

Abstract: PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 LFPAK56 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp
Contextual Info: Ultra-reliable LFPAK56 and LFPAK33 Tougher just got smaller NXP’s LFPAK – Designed for reliability Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.

Contextual Info: AN11304 MOSFET load switch PCB with thermal measurement Rev. 1 — 25 January 2013 Application note Document information Info Content Keywords Load switch, MOSFETs, DFN2020MD-6 SOT1220 , DFN2020-6 (SOT1118); DFN3333-8 (SOT873-1), thermal resistance Abstract

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . AUTOMOTIVE GRADE Vishay – Overview of Automotive Grade Products Overview of Automotive Grade Products AUTOMOTIVE GRADE PRODUCTS Discrete Semiconductors • MOSFETs • Optoelectronics Passive Components • Capacitors

Q1/2N3055 RCA

Contextual Info: Chapter 9 Using Analog CMOS Arrays to Create Current Sources 9.1 RCA pioneered CMOS Once the first stable MOSFETs had been created in the early 1960s by RCA researchers Steve Hofstein and Fred Heiman, and by Dr. Frank Wanlass at Fairchild Semiconductor, it opened the door to researching and developing other types of MOS

SI3865DDV

Abstract: IK pressure gauge si3865
Contextual Info: New Product Si3865DDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VIN VDS2 (V) 1.5 to 12 RDS(on) () ID (A) 0.054 at VIN = 4.5 V 3.9 0.077 at VIN = 2.5 V 3.2 0.106 at VIN = 1.8 V 2.8 0.165 at VIN = 1.5 V 2.2 DESCRIPTION The Si3865DDV includes a p- and n-channel MOSFET in a

nx1117

Abstract: Electrohydraulic Power Steering SOD128 airbag 006aab592 BM TVS smd schottky diode sot363 TVS bm SMA AEC-Q100 SC-76
Contextual Info: Automotive discrete solutions High quality and innovation Automotive discrete solutions Body Control Unit } Low VF MEGA Schottky diodes Interior lighting } Low VF (MEGA) } Low VCEsat (BISS) transistors Airbag control } Low VF (MEGA) Schottky rectifier } MOSFETs

100v 23A P-Channel MOSFET

Contextual Info: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

Contextual Info: FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 500V, RDS on = 0.615Q. TO-254AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: AN11113 LFPAK MOSFET thermal design guide - Part 2 Rev. 2 — 16 November 2011 Application note Document information Info Content Keywords LFPAK, MOSFET, thermal analysis, design and performance, thermal considerations, thermal resistance, thermal vias, SMD, surface-mount,

p-channel mosfet with diode sot89

Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA
Contextual Info: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of

1E14

Abstract: 2E12 FRS234D FRS234H FRS234R
Contextual Info: FRS234D, FRS234R, FRS234H 5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 250V, RDS on = 0.715Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

NX3008NBKMB

Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

NTD60N03T4

Abstract: NTD60N03 SMD310 eco solder paste 5M MARKING CODE DIODE SMC
Contextual Info: NTD60N03 Advance Information Power MOSFET 60 Amps, 28 Volts N–Channel DPAK http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 60 AMPERES 28 VOLTS RDS on = 6.1 mΩ (Typ.)

Contextual Info: NTD60N03 Power MOSFET 60 Amps, 28 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • Power Supplies Converters

equivalent M 393

Contextual Info: HARRIS V p 11 SEMCONt SECTOR 4DE D m 2N7285R, 2N7285H HARRIS S E M I C O N D U C T O R RCA H AR RIS GE MB02271 DD337b2 0 EiHAS REGISTRATION PENDING Available As FRM240R, FRM240H IN T E R S IL 3 16A,200V RDS(on =0.24n Radiation-Hardened N-Channel Power MOSFETs

Dual Gate MOSFET graphs

Abstract: ALD1148xx
Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D PERFORMANCE CHARACTERISTICS OF EPAD® PRECISION MATCHED PAIR MOSFET FAMILY GENERAL DESCRIPTION ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory

Contextual Info: JANSR2N7292 Semiconductor Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC