PACKAGE USM Search Results

SC-75

Abstract: KN4L3M
Contextual Info: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package • Resistors built-in type 0.3 +0.1 –0 0.15 +0.1 –0.05 • Complementary to KA4xxx PACKAGE KN4xxx SC-75 (USM) 1.6 ± 0.1

PACKAGE usm

Abstract: JEDEC SC-70
Contextual Info: 3-Pin Ultra Super Mini Package USM Package Outline Dimensions Outline Dimensions Unit: mm 2.0 ±0.2 0.15 +0.1 –0.05 0.3 +0.1 –0 1 2.1 ±0.1 1.25 ±0.1 3 2 0.65 0.65 0.9 ±0.1 0 ~0.1 0.7 1.3 ±0.1 Land Pattern Example Unit: mm 1.9 1.0 0.5 Toshiba package name

land pattern for sot109-1

Abstract: TSSOP-8 footprint and soldering sot-23 SOD87 footprint
Contextual Info: Packages Package cross reference 88 Packing methods 90 Minimized outline drawings and reflow soldering footprint 96 Package overview 86 107 87 Package cross reference Package cross reference 88 types in bold represent new products types in bold represent new products

sot-36

Abstract: sot36 SMD USM
Contextual Info: Pakages Available • 2 leads type Package Unit : mm USM DSM r “i r“i 1.25 Body dimension Actual size Enlarged (x3 .0) PSM r"1 1.25 1.7 2.6 1.7 • 4.5 1 ■ # # #M ini mold type (Unit : mm) Package r 2. 0 -n r 1 Body dimension 1606 (0603) 2125 (0805)

USM4

Abstract: HC49USM4 WIFI layout guide
Contextual Info: ` 4 Pad Metal Package Quartz Crystal, 4.8 mm x 12.5 mm Product Features: HC49USM4 Series Applications: SMD Package Compatible with Leadfree Processing Grounded package for low EMI Fibre Channel Server & Storage Sonet /SDH 802.11 / Wifi T1/E1, T3/E3 System Clock

HC49USM4 Series

Contextual Info: ` 4 Pad Metal Package Quartz Crystal, 4.8 mm x 12.5 mm Product Features: HC49USM4 Series Applications: SMD Package Compatible with Leadfree Processing Grounded package for low EMI Fibre Channel Server & Storage Sonet /SDH 802.11 / Wifi T1/E1, T3/E3 System Clock

KA4A4M

Abstract: SC-75 A30150
Contextual Info: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1

KN4A4L

Abstract: SC-75 KN4L3M
Contextual Info: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KN4xxx 3 0.8 ± 0.1 1.6 ± 0.1

D1649

Abstract: KA4A4M SC-75 KA4L4M
Contextual Info: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1

Contextual Info: 3-Pin Ultra Super Mini Package Embossed TE85L Tape for the USM Package Tape Dimensions Unit: mm 2.0 ±0.05 φ1.5 ±0.1 0.2 4.0 ±0.1 Y 1.75 Y X 2.3 8.0 3.5 ±0.05 φ1.05 X’ Y’ Y’ 1.25 Feed direction 2.2 X X’ Cross section X-X’ Reel Dimensions Cross section Y-Y’

KF5N50

Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
Contextual Info: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41

Contextual Info: RA78K/0 ASSEMBLER PACKAGE 3. RA78K/0 ASSEMBLER PACKAGE The RA 76K /0 assem bler package consists of several softw are packages, such as a relocatable assem bler, structured assem bler preprocessor, and linker to aid in effective developm ent on the 7BK/0 Series.

BENT LEAD transistor TO-92 Outline Dimensions

Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
Contextual Info: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI­ CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N

KDR378

Abstract: marking x3
Contextual Info: SEMICONDUCTOR KDR378 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking X3 No. 2001. 3. 9 Item Marking Description Device Mark X3 KDR378 hFE Grade - - Revision No : 0 1/1

PC357NT

Abstract: PC357N1T PC357N2T PC357N5T PC357N7T PC357N8T PC357N9T PC357NOT Pc357Nf
Contextual Info: PC357NT Opaque*, Mini-tlat Package, General Purpose photocou~r PC357NT • ~ 1. Opaque type, mini-flat package 2. .3 . 4. * Unit : mm Dimandcms Pc357Nf 2.wf025 PC357NT (l-channel) Subminiature type (The volume is smaller than that of our conventional DIP type by as far as 30%.)

RT3P66U

Contextual Info: PRELIMINARY RT3P66U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P66U is a composite transistor built with two 1.6 ±0.05 RT1P430 in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ FEATURE

RT3N66U

Abstract: RT1N430
Contextual Info: PRELIMINARY RT3N66U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N66U is a composite transistor built with two 1.6 ±0.05 RT1N430 in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ FEATURE

T0-92 DIMENSIONS

Contextual Info: CONTENTS [1 ] Alphanumeric Product List. [2 ] Quick Selector Guide . 13 Quick Selector by Type . Package Types .

GR09

Abstract: KDS121
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.LTD. KDS121 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : USM. : V f =0.9V Typ. .

BC858W

Contextual Info: SEMICONDUCTOR BC858W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking 3J No. 2000. 12. 27 Item Marking Description Device Mark 3 BC858W hFE Grade J A J , B(K), C(L) Revision No : 0 1/1

isahaya

Abstract: RT1N141 RT3T11U
Contextual Info: RT3T11U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm 1.6 ±0.05 RT3T11U is a composite transistor built with RT1N141 chip and RT1P141 chip in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ

KDS122

Abstract: marking H
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDS122 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : USM. : VF=0.9V Typ. .

RT1N241

Abstract: RT3N22U
Contextual Info: RT3N22U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm 1.6 ±0.05 RT3N22U is a composite transistor built with two RT1N241 in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ 6 0.5 FEATURE

RT1P144

Abstract: RT3T55U
Contextual Info: RT3T55U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3T55U is a RT1N144 chip composite and transistor RT1P144 built Unit：mm 1.6 ±0.05 with chip in USM6F 1.2 ±0.05 1pin ﾏｰｸ package.