KDS121 Search Results

KDS121E

Abstract: transistor ESM 30
Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC

Contextual Info: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2011. 12. 23 Revision No : 1 1/2

KDS121

Contextual Info: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E B M M : USM. : VF=0.9V Typ. . D J 2 A : trr=1.6ns(Typ.). G FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance

GR09

Abstract: KDS121
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.LTD. KDS121 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : USM. : V f =0.9V Typ. .

KDS121V

Contextual Info: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : VSM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). H G D 2 : CT=0.9pF (Typ.). A FEATURES ・Very Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time

KDS121

Contextual Info: SEMICONDUCTOR KDS121 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 B3 1 2 Item Marking Description Device Mark B3 KDS121 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KDS121E

Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. : ESM. E : VF=0.9V Typ. . B : trr=1.6ns(Typ.). : CT=0.9pF (Typ.). D 2 DIM A B C D G H A FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time

KDS121V

Contextual Info: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : VSM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G D 2 : CT=0.9pF (Typ.). 1 3 K H A FEATURES ᴌVery Small Package ᴌLow Forward Voltage ᴌFast Reverse Recovery Time

marking B3

Abstract: KDS121E
Contextual Info: SEMICONDUCTOR KDS121E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking B3 No. 2000. 12. 27 Item Marking Description Device Mark B3 KDS121E hFE Grade - - Revision No : 0 1/1

Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC

Contextual Info: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2008. 9. 8 Revision No : 5 1/2

KDS121

Abstract: KDS12
Contextual Info: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.9V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current

ESM diode

Abstract: KDS121E
Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). D H : CT=0.9pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES

marking B3

Abstract: KDS121V
Contextual Info: SEMICONDUCTOR KDS121V MARKING SPECIFICATION VSM PACKAGE 1. Marking method Laser Marking 2. Marking B3 1 No. 2006. 2. 10 Item Marking Description Device Mark B3 KDS121V Revision No : 0 1/1

KDS121

Contextual Info: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. M B M : VF=0.9V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current

transistor ESM

Abstract: marking B3 KDS121E ESM diode
Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Contextual Info: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters