PACKAGE DIODE Search Results

Contextual Info: SUBMINIATURE SOLID STATE LAMP AM2520SF4C03 Features Description ! SUBMINIATURE PACKAGE. SF4 Made with Gallium Aluminum Arsenide Infrared ! GULL WING. ! LONG LIFE - SOLID STATE RELIABILITY. ! LOW Emitting diodes. PACKAGE PROFILE. ! PACKAGE : 1000PCS / REEL.

Contextual Info: VBUS05A1-SD0 www.vishay.com Vishay Semiconductors Low Capacitance Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in Silicon Package FEATURES • Ultra compact CLP0603 package • Low package height < 0.3 mm 0.27 • 1-line ESD-protection

Contextual Info: SB16-100MA SB16-100AM SB16-100RM SEME LAB MECHANICAL DATA Dimensions in mm DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS FEATURES • HERMETIC TO220 METAL PACKAGE • ISOLATED CASE • SCREENING OPTIONS AVAILABLE TO220 METAL PACKAGE

MIE-334L3

Contextual Info: GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE MIE-334L3 Description Package Dimensions The MIE-334L3 is an infrared emitting diode in Unit : mm inches GaAlAs on GaAlAs technology molded in water clear ψ3.00 (.118) plastic package. 5.25 (.207) 1.00 (.040)

MIE-556L3U

Contextual Info: GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-556L3U Package Dimensions The MIE-556L3U is infrared emitting diodes in Unit: mm inches φ5.05 (.200) GaAlAs technology molded in pastel blue transparent package. 5.47 (.215) 7.62 (.300) 5.90

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER IPTIELEETMIICS MCT4 PACKAGE DIMENSIONS DESCRIPTION The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor. FEATURES Hermetic package High current transfer ratio; typically 35%

Contextual Info: VCUT05D1-SD0 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in Silicon Package FEATURES • Ultra compact CLP0603 package • Low package height < 0.3 mm 0.27 • 1-line ESD-protection • Working range ± 5.5 V

Contextual Info: VTP Process Photodiodes VTP100C PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and

A 3120 opto

Abstract: MIE-384A4
Contextual Info: AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-384A4 Package Dimensions The MIE-384A4 is an infrared emitting diode utilizing Unit : mm inches GaAs with AlGaAs window coating chip technology. 4.6±0.30 (.181) It is molded in water clear plastic package.

MIE-304A2

Abstract: opto 921 high power infrared led
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A2 Package Dimensions The MIE-304A2 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

high power infrared led

Abstract: MIE-304A4 Unity Opto Technology
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A4 Package Dimensions The MIE-304A4 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

MIE-334A4

Contextual Info: AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE MIE-334A4 Description Package Dimensions The MIE-334A4 is an infrared emitting diode utilizing Unit : mm inches GaAs with AlGaAs window coating chip technology. ψ3.00 (.118) It is molded in water clear plastic package.

Contextual Info: DATA SHEET Silicon Schottky Diodes in Hermetic Surface Mount Package Hermetic Ceramic Package Features ● ● ● ● ● ● ● ● Medium, low and ZBD barrier heights available Hermetic ceramic package, 1.83 x 1.43 x 1.0 mm Very low parasitic impedance

4 pin side look phototransistor

Abstract: MID-13A45 MIE-134A1-02 2450-10
Contextual Info: GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description MIE-134A1-02 Package Dimensions Unit: mm inches The MIE-134A1-02 is a GaAs infrared emitting diode molded in clear, lensed side looking package. The MIE-134A1-02 provides a broad range of

MID-13A45

Abstract: MIE-134A1
Contextual Info: AlGaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description MIE-134A1 Package Dimensions The MIE-134A1 is a AlGaAs/GaAs infrared emitting diode Unit: mm inches molded in clear, lensed side looking package. The MIE-134A1 provides a broad range of 4.00 ± 0.10

MID-14422

Abstract: MIE-144G1
Contextual Info: GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description MIE-144G1 Package Dimensions Unit: mm inches The MIE-144G1 is a GaAs infrared emitting diode molded in clear , lensed side looking package . 1.10 (.043) 4.00±0.08 (.156±.003) The MIE-144G1 provides a broad range of

NSR02L30NXT5G

Abstract: 0201 footprint
Contextual Info: NSR02L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

om6509sa

Abstract: OM6508SA 80 Amp current 100 volt diode
Contextual Info: OM6508SA OM6509SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package FEATURES • • • • • • • • • Isolated Hermetic Metal Package

MID-11422

Abstract: MIE-114H4
Contextual Info: AlGaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description Package Dimensions Unit: mm inches The MIE-114H4 is a AlGaAs infrared emitting diode 4.45±0.20 (.175±.008) 2.22 (.087) (.087) molded in clear, lensed side looking package . The MIE-114H4 provides a broad range of

high power infrared led

Abstract: MIE-324A2
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-324A2 Package Dimensions The MIE-324A2 is a high power infrared eimtting Unit : mm inches diode in GaAs technology with AlGaAs window φ 3.55±0.25 (.140±.010) coating molded in water clear plastic package.

1N4148W

Abstract: 1N4448W
Contextual Info: 1N4148W, 1N4448W SURFACE MOUNT SWITCHING DIODES VOLTAGE 100 Volts 410 - 500 mW POWER FEATURES • Fast switching Speed • Electrically Identical to Standard JEDEC • High Conductance • Surface Mount Package Ideally Suited for Automatic Insertion • Flat package SOD-123 in stead mini-MELF package.

1N4150W

Abstract: 1N4151W
Contextual Info: 1N4150W, 1N4151W SURFACE MOUNT SWITCHING DIODES VOLTAGE 50 - 75 Volts 410 - 500 mW POWER FEATURES • Fast switching Speed • Electrically Identical to Standard JEDEC • High Conductance • Surface Mount Package Ideally Suited for Automatic Insertion • Flat package SOD-123 in stead mini-MELF package.

QEC112

Abstract: QEC113 QEC11X QSCXXX
Contextual Info: QEC112, QEC113 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ ■ ■ The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. λ = 940 nm PACKAGE DIMENSIONS Chip material = GaAs Package type: T-1 3 mm

OP250

Abstract: OP520
Contextual Info: Infrared Light Emitting Diode in Miniature SMD Package OP250 • • • • Flat Lens High Power 1206 Package Size 880nm Wavelength The OP250 is a GaAlAs infrared LEDs mounted in a miniature SMT package. The device incorporates a flat molded lens which enables a wide beam angle and provides an even emission pattern. This device is packaged