PACKAGE 53 Search Results
PACKAGE 53 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 54ACT825/QKA | Rochester Electronics LLC | 54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP |
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| TPH1R306PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQH | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPHR8504PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQ5 | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet |
PACKAGE 53 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ecn 1310
Abstract: power diode package PT6700 PT6702 PT6705 PT6715 PT6930
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Original |
pt5070pt6700pt6702pt6705+4 | |
PT6702
Abstract: PT6930 PT6700 PT6705 PT6715
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pt5070pt6700pt6702pt6705+2 | |
CG-84
Abstract: CP-84 cg84
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cp-84cg-84fp-80atfp-80c+1 | |
PACKAGE DIMENSIONSContextual Info: Package Diagrams Index of Package Diagrams 100-Ball caBGA Package . 12 120-Pin PQFP Package . 12 128-Pin PQFP Package . 13 128-Pin TQFP Package . 13 |
Original |
20-pin300-mil24-pin28-pin+1 | |
DRAM 44
Abstract: TSOP 54 II
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OCR Scan |
dram 44tsop 54 ii | |
MIE-536L3UContextual Info: GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536L3U Package Dimensions The MIE-536L3U is infrared emitting diodes in Unit: mm inches φ5.05 (.200) GaAlAs technology molded in pastel blue transparent package. 5.47 (.215) 7.62 (.300) 5.90 |
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mie-536l3u00min | |
MIE-536A2UContextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A2U Package Dimensions φ5.05 .200 The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches ) |
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mie-536a2u00min | |
MIE-536A4U
Abstract: LTd1117
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Original |
mie-536a4u00minltd1117 | |
MIE-534L3Contextual Info: GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-534L3 Package Dimensions The MIE-534L3 is an infrared emitting diode in GaAlAs Unite: mm inches φ5.05 (.200) on GaAlAs technology molded in water clear plastic 5.47 (.215) package . 7.62 (.300) |
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mie-534l300min54nom | |
TO111 package
Abstract: TO61 package TO63 package MOSFET F24 S06 rectifier
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OCR Scan |
60milo-111lcc-28nms-11+5 | |
MIE-534A4Contextual Info: AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-534A4 Package Dimensions The MIE-534A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. Unit: mm inches |
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mie-534a400min | |
sot-223 93
Abstract: 3301 sot-89 3301-1000 5201 sot223
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Original |
300mil400mil600mil1mm/20pitches+4 | |
PT3320Contextual Info: For assistance or to order, call 800 531-5782 Product families using this package style: PT3320 Package Style 840 Suffix N PACKAGE INFORMATION AND DIMENSIONS Revised 12/02/98 Power Trends, Inc. 27715 Diehl Road, Warrenville, IL 60555 (800) 531-5782 Fax: (630) 393-6902 http://www.powertrends.com |
Original |
pt3320 | |
SMD MARKING CODE 071 A01
Abstract: smd code 38P LGA 1155 PIN diagram MARKING CODE SMD IC A08 L QUAD Aluminum nitride smd marking m05 LGA 1155 Socket PIN diagram pitch 0.4 QFP 256p marking code smd fujitsu Texas Instruments epoxy Sumitomo
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lcc-26p-m09lcc-28p-m04lcc-28p-m05lcc-28p-m06+15 | |
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PT78ST200Contextual Info: For assistance or to order, call 800 531-5782 Product families using this package style: PT78ST200 Package Style 600 Suffix V PACKAGE INFORMATION AND DIMENSIONS Revised 5/15/98 106 Power Trends, Inc. 27715 Diehl Road, Warrenville, IL 60555 (800) 531-5782 Fax: (630) 393-6902 http://www.powertrends.com |
Original |
pt78st200 | |
MVL-534BContextual Info: T-1 3/4 φ5mm PACKAGE SOLID STATE LAMP Description MVL-534B Package Dimensions The MVL-534B, a blue source color device, is made with 5.05 (.200) InGaN ( on SiC substrate) LED die. Unit: mm ( inches ) The package is T-1 3/4(φ5mm) water clear plastic type . |
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mvl-534b00min470nm | |
PT7770
Abstract: PT7746
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Original |
pt7770pt7746 | |
power diode packageContextual Info: For assistance or to order, call 800 531-5782 Product families using this package style: PT3300 Package Style 830 Suffix A, C PACKAGE INFORMATION AND DIMENSIONS Revised 5/15/98 PACKAGING Power Trends, Inc. 27715 Diehl Road, Warrenville, IL 60555 (800) 531-5782 Fax: (630) 393-6902 http://www.powertrends.com |
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pt3300power diode package | |
PT6900
Abstract: PT6920
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Original |
pt6900pt6920 | |
Power Trends
Abstract: PT6900 diehl
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pt6900power trendsdiehl | |
MVL-534UGContextual Info: T-1 3/4 PACKAGE SOLID STATE LAMP MVL-534UG Description Package Dimensions The MVL-534UG, a Green source color device, is made with φ5.05 .200 Gallium Phosphide on Gallium Phosphide light emitting diode. Unit: mm ( inches ) The package is T-1 3/4(5mm) standard green transparent plastic |
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mvl-534ug00min54typ | |
MVL-534BSContextual Info: T-1 3/4 φ5mm PACKAGE SOLID STATE LAMP MVL-534BS Description Package Dimensions The MVL-534BS, a blue source color device, is made with Unit: mm ( inches ) 5.05 (.200) InGaN on SiC substrate LED die. The package is T-1 3/4(φ5mm) water clear plastic type. |
Original |
mvl-534bs00min | |
850 nm Infrared Emitting Diode
Abstract: 850 nm LED high power infrared led MIE-534H4
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Original |
mie-534h4850nm850 nm infrared emitting diode850 nm led+1 | |
TO 106 transistor
Abstract: power diode package transistor 531 PT78ST200
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pt78st200to 106 transistorpower diode packagetransistor 531 | |