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    PA2726 Search Results

    PA2726 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    OPA2726AIDGST
    Texas Instruments Dual Very Low Noise, High-Speed, 12V CMOS Operational Amplifier 10-VSSOP -40 to 125 Visit Texas Instruments Buy
    OPA2726AIDGSTG4
    Texas Instruments Dual Very Low Noise, High-Speed, 12V CMOS Operational Amplifier 10-VSSOP -40 to 125 Visit Texas Instruments Buy
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    PA2726 Price and Stock

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    Rochester Electronics LLC UPA2726UT1A-E1-AY

    MOSFET N-CH 30V 20A 8DFN
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    DigiKey UPA2726UT1A-E1-AY Bulk 18,000 316
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    Rochester Electronics LLC OPA2726AIDGST

    OPA2726 DUAL LOW NOISE, HIGH-SPE
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    DigiKey OPA2726AIDGST Bulk 15,980 77
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    Rochester Electronics LLC UPA2726UT1A-E2-AY

    N-CHANNEL POWER MOSFET
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    DigiKey UPA2726UT1A-E2-AY Bulk 3,000 316
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    Texas Instruments OPA2726AIDGST

    IC CMOS 2 CIRCUIT 10VSSOP
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    DigiKey OPA2726AIDGST Tape & Reel 250
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    Mouser Electronics () OPA2726AIDGST
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    OPA2726AIDGST
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    Rochester Electronics OPA2726AIDGST 15,980 1
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    TME OPA2726AIDGST 1
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    ComSIT USA OPA2726AIDGST 250
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    Vyrian OPA2726AIDGST 4,330
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    Texas Instruments OPA2726AIDGSR

    IC CMOS 2 CIRCUIT 10VSSOP
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    DigiKey OPA2726AIDGSR Tape & Reel 2,500
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    Vyrian OPA2726AIDGSR 4,559
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    PA2726 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2726UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2726UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5


    Original
    PA2726UT1A PA2726UT1A PA2726UT1A-E2-AZ PA2726UT1A-E1-AZ PDF

    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2726T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 6 4 5 0.42 −0.05 RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) 7 3 +0.1 Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V) +0.05 −0 • Built-in gate protection diode


    Original
    PA2726T1A PDF

    PA2726UT1A

    Abstract: PA2726UT1A-E1-AY gate voltage control circuit pa2726
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2726UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 11.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A)


    Original
    PA2726UT1A PA2726UT1A PA2726UT1A-E1-AY gate voltage control circuit pa2726 PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    PA2726UT1A

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF