PA272 Search Results

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2722UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2722UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2722T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 6 4 5 +0.1 0.42 −0.05 RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Thin type surface mount package with heat spreader (8-pin HVSON)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 6 4 5 0.42 −0.05 RDS(on)1 = 5.0 mΩ MAX. (VGS = 10 V, ID = 13 A) 7 3 +0.1 Ciss = 2580 pF TYP. (VDS = 15 V, VGS = 0 V) +0.05 −0 • Built-in gate protection diode

Contextual Info: SMT POWER INDUCTORS Wire Wound - PA2729.XXXNL Series Height: 12.2mm Max Footprint: 22.2 x 19.1mm Max Current Rating: Over 20Apk Inductance Range: 4.7µH to 60µH Higher Efficiency Version of PA2050.XXXNL Series in same footprint Electrical Specifications @ 25°C - Operating Temperature -55°C to +130°C

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2720AGR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2720AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.

PA2727UT1A

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2727UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) 5 +0.1 6 ±0.2 QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) • Thin type surface mount package with heat spreader (8-pin HVSON)

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2726UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2726UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2722UGR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The μPA2722UGR is N-channel MOSFET optimized as low side of synchronous rectifier DC/DC converter. 8 5 1, 2, 3

PA2724UT1A

Abstract: PA2724U PA2724UT1A-E2-AZ PA2724
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2724UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID = 15 A)

PA2722UT1A

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2722UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2728GR SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2728GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer.

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2720AGR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2720AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2726T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 6 4 5 0.42 −0.05 RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) 7 3 +0.1 Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V) +0.05 −0 • Built-in gate protection diode

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2721AGR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2721AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2727UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 +0.1 6 ±0.2 PACKAGE Note 8-pin HVSON 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 4.1 ±0.2 μ PA2727UT1A-E2-AZ 1 0.2 1.0 MAX.

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2724UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2724UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2725UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2727T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2727T1A is N-channel MOSFET designed for DC/DC converter applications. 1 RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A)

PA2729

Abstract: PA2729-802NL
Contextual Info: SMT POWER INDUCTORS Wire Wound - PA2729.XXXNL Series Height: 12.2mm Max Footprint: 22.2 x 19.1mm Max Current Rating: Over 20Apk Inductance Range: 4.7µH to 60µH Higher Efficiency Version of PA2050.XXXNL Series in same footprint Electrical Specifications @ 25°C - Operating Temperature -55°C to +130°C

M100

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2723T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2723T1A is N-channel MOSFET designed for low side device 1 6 • Low on-state resistance 4 5 +0.1 • Built-in gate protection diode

PA2726UT1A

Abstract: PA2726UT1A-E1-AY gate voltage control circuit pa2726
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2726UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 11.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 5.0 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 13 A)

PA2721AGR

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2721AGR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2721AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. 8 5 1, 2, 3 : Source

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2723UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2723UT1A is N-channel MOSFET designed for low side device 1 6 • Low on-state resistance 4 5 +0.1 RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A)