PA2464 Search Results

Contextual Info: Preliminary Data Sheet PA2464T1Q R07DS0189EJ0100 Rev.1.00 Dec 06, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for

lf 244

Abstract: PA246 IC POWER PA2464-LF PA2464 pin DIAGRAM OF IC 7860 60 V long distance remote control ic MA 7840 36dBm
Contextual Info: PA2464/PA2464-LF Power Amplifier IC Princeton Technology Corp. reserves the right to change the product described in this datasheet. All information contained in this datasheet is subject to change without prior notice. Princeton Technology Corp. assumes no responsibility

Contextual Info: PA2464 Power Amplifier IC Advance Information Princeton Technology Corp. reserves the right to change the product described in this datasheet. All information contained in this datasheet is subject to change without prior notice. Princeton Technology Corp. assumes no responsibility

PA2464

Abstract: IC 7830
Contextual Info: PA2464 Power Amplifier IC Advance Information Princeton Technology Corp. reserves the right to change the product described in this datasheet. All information contained in this datasheet is subject to change without prior notice. Princeton Technology Corp. assumes no responsibility

hipot pulse

Contextual Info: High Frequency Wire Wound Transformers EFD25 Platforms - SMT Power Range: Up to 105W Height: 13.7mm Max Footprint: 32.0mm x 26.4mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 21.4µH ±40%

Contextual Info: HIGH FREQUENCY WIRE WOUND TRANSFORMERS EFD25 Platforms - SMT Power Range: Up to 105W Height: 13.7mm Max Footprint: 32.0mm x 26.4mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 DCR Hi-Pot K1 Factor