PA185 Search Results

ef12.6 core transformer

Abstract: ef12.6 transformers inductance transformer* EF12 PA2100NL
Contextual Info: HIGH FREQUENCY WIRE WOUND TRANSFORMERS EF12.6 Platforms - SMT Power Range: Up to 13W Height: 10.2mm Max Footprint: 19.9mm x 14.2mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 PA1853NL 2-3

d1296

Abstract: PA1853
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1853 is a switching device which can be driven directly by a 4-V power source. The µPA1853 features a low on-state resistance and

UPA1856GR

Abstract: PA1856 PA1856GR-9JG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5 V power source. The µPA1856 features a low on-state resistance and

d1273

Abstract: PA1851
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1851 is a switching device which can be driven directly by a 4.0-V power source. The µPA1851 features a low on-state resistance and

PA1854

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1858 P チャネル パワーMOS FET スイッチング用 µPA1858 は，2.5 V 電源系による直接駆動が可能なスイッチング 外形図（単位: mm）

d1273

Abstract: SS-220 10v PA1851 UPA1851GR-9JG
Contextual Info: DATASHEET MOS Field Effect Transistor H P A 1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The //PA1851 is a switching device which can be driven directly by a 4V power source. The n PA1851 features a low on-state resistance and excellent

PA1855

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and

LM 858 IC

Contextual Info: HIGH FREQUENCY WIRE WOUND TRANSFORMERS EF12.6 Platforms - SMT Power Range: Up to 13W Height: 10.2mm Max Footprint: 19.9mm x 14.2mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 PA1853NL 2-3

PA1855

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and

UPA1856GR

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and

g10q

Abstract: PA1853 uPA1853GR-9JG
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor H PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The ¡x PA1853 is a switching device which can be driven directly by a 4V power source. The n PA1853 features a low on-state resistance and excellent

PA1856

Abstract: PA1856GR-9JG UPA1856GR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and

PA1852

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1852 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1852 is a switching device which can be driven directly by a 2.5-V power source. The µPA1852 features a low on-state resistance and

UPA1856GR

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and

PA1850

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1850 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1850 is a switching device which can be driven directly by a 2.5-V power source. The µPA1850 features a low on-state resistance and

D128

Abstract: PA1852
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1852 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1852 is a switching device which can be driven directly by a 2.5-V power source. The µPA1852 features a low on-state resistance and

PA1854

Abstract: a4660
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and

D1380

Abstract: PA1856 PA1856GR-9JG UPA1856GR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and

PA1858

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1858 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1858 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and

d1296

Abstract: PA1853
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1853 is a switching device which can be driven directly by a 4-V power source. The µPA1853 features a low on-state resistance and

PA1855

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PA1852

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社