PA1604 Search Results

Contextual Info: SPECIFICATION Customer : Customer's P/N: K.C.Dwg.No. : K.C.P/N. : PA1604AT 1 P/N HLM 1 6 0 8 0 8 12N K T Packaging Style Inductance Tolerance Dimensions Symbol of Product Impedance Inductance Tolerance:S±0.3nH,J:±5%,K:±10%,M:± 20% Packaging Style: B: Bulk , T: Tape and Reel

pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

A1604C

Abstract: P16C T108 T450 T540 PA1604
Contextual Info: NEC •• ■5 / — K Compound Field Effect P o w er Transistor u ^ y U '> y ^ / ¿ P A 1 6 0 4 ¡ 2 /< 7 -M O S P A 1 6 4 F E T 7 K , F E T ^ & £ 4 / 'Jy 7 ^ ^ 7 - M 0 S m ill& C H f W /> i K, X T '/ h °^ ^ E - ^ f | x g Jjf f lh L T ^ jU T '- T o $1

16PIN

Abstract: IEI-1213 MEI-1202 UPA1604 DD 127 D transistor
Contextual Info: DATA SHEET N E C COMPOUND FIELD EFFECT POWER TRANSISTOR r i — I 9 H I ¿ ¿ P A 1 6 4 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¿PA1604 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 4 circuits, Clump Diode and resistances designed for LED, Relay,

pa1556h

Abstract: pa1556ah PA1520H pa1572h PA1523H PA1526H PA1601 pa1603cx PA1500H PA1501H
Contextual Info: - 172 - f m £ tt: m € & m s 1 . ft * Ê il’ K V n * (V) ß PA573T NEC MOS P E - 30 D S S ±7 U PA602T NEC MOS N E 50 D SS ±20 ß PA603T NEC MOS P E - 50 D S S ±16 SW ß PA606T NEC sw MOS N E 50 D S S ±20 U PA607T NEC SW MOS P E - 50 D SS ±16