P8503BMG Search Results

P8503BMG

Contextual Info: P8503BMG N-Channel Logic Level Enhancement Mode Field Effect Transistor Preliminary NIKO-SEM SOT-23 Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 85mΩ 3A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

H5RS1H23MFR

Abstract: APW7141 92HD81B1c5 8205S jmb385 Marvell 88E8057 H5RS1H23MFR-N0C 1001 fba hybrid 92HD81B AT24C02B
Contextual Info: 5 4 3 M09H1 Block Diagram D 1 SYSTEM DC/DC INPUTS DCBATOUT 3D3V_S5 800/1066MHz@1.05V PCI-EG Cantiga AGTL+ CPU I/F DDR2 667/800 Channel A TMDS nVIDIA N10P/10M-GS VRAM 1G Hz 32M*32*433~40 71.CNTIG.00U X4 DMI 400MHz Codec 92HD81 MIC In 1D05V_S0 16A AZALIA 1D8V_S3(16A)

Contextual Info: 单 N 沟道 MOSFET ELM33404CA-S •概要 ■特点 ELM33404CA-S 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=3A ·Rds on < 85mΩ (Vgs=10V) ·Rds(on) < 115mΩ (Vgs=4.5V) ■绝对最大额定值 项目

Contextual Info: シングル N チャンネル MOSFET ELM33404CA-S •概要 ■特長 ELM33404CA-S は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=3A ・ Rds on < 85mΩ (Vgs=10V) ・ Rds(on) < 115mΩ (Vgs=4.5V)

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

NPCE781BA0DX

Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
Contextual Info: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM

Contextual Info: Single N-channel MOSFET ELM33404CA-S •General description ■Features ELM33404CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=3A Rds(on) < 85mΩ (Vgs=10V) Rds(on) < 115mΩ (Vgs=4.5V)

Contextual Info: Single N-channel MOSFET ELM33404CA-S •General description ■Features ELM33404CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=3A Rds(on) < 85mΩ (Vgs=10V) Rds(on) < 115mΩ (Vgs=4.5V)

TP2801

Abstract: slg8sp513v diode tp806 RTM875N-606-VD-GR C5855 rtm875n-606 RTL8103 92HD81B1X5 ST330U2D5VDM-13GP 1SMB22AT3G-GP-U
Contextual Info: 5 4 3 2 1 D D Alba Discrete ATI M92-LP gDDR2 Schematics uFCPGA Mobile Penryn Intel Cantiga-PM + ICH9M C C 2009-03-23 REV : SA B B DY : Nopop Component GM : Pop when Cantiga is GM PM : Pop when Cantiga is PM G/P : BOM control if Cantiga is PM A A <Core Design>

Nuvoton NPCE781

Abstract: NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602
Contextual Info: 5 4 3 2 1 Berry Discrete/UMA Schematics Document D C D AMD Danube CPU S1g4 AMD GPU Madison-LP/M96-LP M2 RS880M + SB820M C 2010-03-08 REV : A00 B B <Core Design> Size A4 Document Number 4 3 Rev 2 Sheet ai Berry AMD Discrete/UMA Date: Monday, March 08, 2010