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Catalog Datasheet	Type	Document Tags	PDF
P8008 Abstract: VDR 0047 P80081 UT61L12816 128K x 16-bit Contextual Info:  UTRON Preliminary Rev. 0.1 UT61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION Preliminary Rev. 0.1 Original. DESCRIPTION UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882	Original	ut61l12816 p80081 152-bit 10/12/15ns +5current3-5777919 ut61l12816mc-10 p8008 vdr 0047 128k x 16-bit	PDF
UT61L12816 Contextual Info:  UTRON Rev. 1.0 UT61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Rev. 1.0 1. Revised Standby current : 10/2mA max 0.5mA(typ.) 2. Delete ICC1, ICC2 3. Revised ISB : 30mA 3mA, ISB1:10mA 2mA,	Original	ut61l12816 10/2ma p80081 500mv	PDF

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P8008

Abstract: VDR 0047 P80081 UT61L12816 128K x 16-bit
Contextual Info:  UTRON Preliminary Rev. 0.1 UT61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION Preliminary Rev. 0.1 Original. DESCRIPTION UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882

Original

ut61l12816 p80081 152-bit 10/12/15ns +5

PDF

UT61L12816

Contextual Info:  UTRON Rev. 1.0 UT61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Rev. 1.0 1. Revised Standby current : 10/2mA max 0.5mA(typ.) 2. Delete ICC1, ICC2 3. Revised ISB : 30mA 3mA, ISB1:10mA 2mA,

Original

ut61l12816 10/2ma p80081 500mv

PDF