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P80076 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
VDR 0047 Contextual Info:  UTRON Preliminary Rev. 0.2 UT61L25616 256K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Preliminary Rev. 0.2 1. Revised Pin number UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.	Original	ut61l25616 p80076 304-bit ut61l25616mc-10 +3ut61l25616mc-12 ut61l25616mc-15 vdr 0047	PDF
VDR 0047 Abstract: UT61L25616MC-10 Utron Technology Contextual Info:  UTRON Rev. 1.0 UT61L25616 256K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Preliminary Rev. 0.2 1. Revised Pin number Rev. 1.0 1. Revised Standby current : 10/2mA max 0.5mA(typ.) 2. Delete ICC1, ICC2	Original	ut61l25616 10/2ma p80076 16mc-15 +6ut61l25616mcl-10 ut61l25616mcl-12 ut61l25616mcl-15 vdr 0047 ut61l25616mc-10 utron technology	PDF

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VDR 0047

Contextual Info:  UTRON Preliminary Rev. 0.2 UT61L25616 256K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Preliminary Rev. 0.2 1. Revised Pin number UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

Original

ut61l25616 p80076 304-bit ut61l25616mc-10 +3

PDF

VDR 0047

Abstract: UT61L25616MC-10 Utron Technology
Contextual Info:  UTRON Rev. 1.0 UT61L25616 256K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Preliminary Rev. 0.2 1. Revised Pin number Rev. 1.0 1. Revised Standby current : 10/2mA max 0.5mA(typ.) 2. Delete ICC1, ICC2

Original

ut61l25616 10/2ma p80076 16mc-15 +6

PDF