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Catalog Datasheet	Type	Document Tags	PDF
VDR 0047 Abstract: UT62L6416 Contextual Info:  UTRON UT62L6416 64K X 16 BIT LOW POWER CMOS SRAM Preliminary Rev. 0.1 FEATURES GENERAL DESCRIPTION The UT62L6416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. Fast access time : 55ns max for Vcc=3.0V~3.6V	Original	ut62l6416 576-bit 70/100ns 45/35/25ma +6i/o16 44-pin 400mil 48-p44 p80073 vdr 0047	PDF
VDR 0047 Abstract: UT62L6416 Contextual Info:  UTRON UT62L6416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Rev. 1.0 1.Revised Access time : 55/70/100nsB55/70ns 2.Revised Standby current : Delete 20uA TYP. L-version 3.Revised extended temp : -20℃~80℃B-20℃~85℃	Original	ut62l6416 55/70/100ns 55/70ns 48-pin +3p416bsl-70lle p80073 vdr 0047	PDF

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VDR 0047

Abstract: UT62L6416
Contextual Info:  UTRON UT62L6416 64K X 16 BIT LOW POWER CMOS SRAM Preliminary Rev. 0.1 FEATURES GENERAL DESCRIPTION The UT62L6416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. Fast access time : 55ns max for Vcc=3.0V~3.6V

Original

ut62l6416 576-bit 70/100ns 45/35/25ma +6

PDF

VDR 0047

Abstract: UT62L6416
Contextual Info:  UTRON UT62L6416 64K X 16 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Rev. 1.0 1.Revised Access time : 55/70/100nsB55/70ns 2.Revised Standby current : Delete 20uA TYP. L-version 3.Revised extended temp : -20℃~80℃B-20℃~85℃

Original

ut62l6416 55/70/100ns 55/70ns 48-pin +3

PDF