screen emulsion
Abstract: P8002355 P8002392 63Sn37Pb
Contextual Info: Application Note Soldering Guidelines for Module PCB Mounting Rev 14 OBJECTIVE The objective of this application note is to provide ANADIGICS’ customers general guidelines for PCB second level interconnect design when assembling with ANADIGICS’ module products.
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UT61L256JC-12
Abstract: UT61L256JC-10 UT61L256JC-15 UT61L256JC-8 UT61L256LS-10 UT61L256LS-12 UT61L256LS-15
Contextual Info: UTRON Rev. 1.3 UT61L256 32K X 8 BIT HIGH SPEED LOW VCC CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 8/10/12/15ns max. Low operating power consumption: 60 mA (typical.) Single 3.3V power supply All inputs and outputs are TTL compatible Fully static operation
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UT61L256
8/10/12/15ns
28-pin
UT61L256
144-bit
P80023
UT61L256JC-12
UT61L256JC-10
UT61L256JC-15
UT61L256JC-8
UT61L256LS-10
UT61L256LS-12
UT61L256LS-15
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4419B
Abstract: C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003 63Sn37Pb Sonoscan
Contextual Info: HELP3TM Dual-band Cellular/PCS WCDMA Power Amplifier Module Application Note HELP3TM Dual-band WCDMA Power Amplifier Module Rev 3 Relevant products • AWT6221 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar provide optimum performance in a 50 Ω system, and
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AWT6221
4419B
C0805C225K9RACTU
ECJ-1VB1H103K
PCC1784CT-ND
R04003
63Sn37Pb
Sonoscan
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C0805C225K9RACTU
Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003
Contextual Info: HELP3TM Tri-band USCellular/Japan Cellular/IMT UMTS/WCDMA Power Amplifier Module Application Note HELP3TM Tri-band WCDMA Power Amplifier Module Rev 2 Relevant products • AWT6222 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar transistor HBT power amplifier module is designed
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AWT6222
C0805C225K9RACTU
ECJ-1VB1H103K
PCC1784CT-ND
R04003
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P8002
Abstract: J629-ND ECJ-0EB1C102K R04003 AWT6224 C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND
Contextual Info: Application Note 900 MHz/IMT HELP3TM Dual-band UMTS Power Amplifier Module Rev 3 Relevant products • AWT6224 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar optimum performance in a 50 Ω system, and minimal transistor HBT power amplifier module is designed
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AWT6224
P8002
J629-ND
ECJ-0EB1C102K
R04003
AWT6224
C0805C225K9RACTU
ECJ-1VB1H103K
PCC1784CT-ND
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