P7 TRANSISTOR Search Results

Contextual Info: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P7 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics

Contextual Info: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P7 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage

Contextual Info: MITSUBISHI MICROCOMPUTERS M37733S4BFP 16-BIT CMOS MICROCOMPUTER DESCRIPTION •P ro g ra m m a b le input/output The M 37733S4BFP is a m icrocom puter using the 7700 Family core. ports P4, P5, P6, P7, P 8 . 37

Contextual Info: TLP733FJLP734F TO SHIBA TOSHIBA PHOTOCOUPLER TI P7 3 3 F GaAs IRED & PHOTO-TRANSISTOR TI P73 4F Unit in mm OFFICE MACHINE SWITCHING PO W ER SUPPLY TJ.'TJJXT 3 7I QUQUT1? U 11U -1- T T . PI U7 QT 1y l l ? W UnAOViO P Iie> 4-e>U in f CL o r\l^ A + A /O optically coupled to a gallium arsenide infrared emitting diode in a six

T018

Abstract: 2n1132
Contextual Info: PNP Silicon Transistors PNP Silico n T ran sisto rs fo r high level audio ap p lications Characteristics at T.im jj = 2 5 °C M a xim um ratings Type B V CSO V BVC £0 V Case B V £S O V l CM A P7 0 T 1 W PT O T 2 W J JM °C h F £ 1 0 V /1 5 0 m A 30 . 25 0

20A400

Abstract: 2SD1592 transistor n1t1
Contextual Info: 2SD1592 NPN x i l NPN S ilicon T riple D iffuse d D arlington Transistor H igh V o lta g e , Low Speed S w itc h in g Industrial Use m&m « i : 1 ? - o o3 V 1 0 .5 M A X . ij > h ? i'felfD!trh*'' u0 o i£ W iK ^ T -# > 5 „ o p7 '< , 4 '•<, o tm m a itm u fT - y

fuji ipm

Abstract: fuji electric ipm 4504 opto kic 125 6MBP75NA060-01 optocoupler 1g Hpcl
Contextual Info: SPECIFICATION Device Name : I G B T - 1P M Tyoo Name : 6 M B P7 5 N A 060-0 1 Spec No. : M S6 M0276 F u ji E lectric C o .L td . Matsumoto Factory DATE AWN XFD NAME APPROVED Fuji Electric Co.,Ltd. n-XtiLJkiJhi •/. • o ¿C M Û S 6 M 2 7 6 w i s H04-004-07

hef4051

Abstract: 74AUP2G34 74LVT1403 74ABT543A 74LV74 74AVCH1T45 74HC590 CBTD3306 NCX2200 74HC40103
Contextual Info: ロジック IC データスイッチ/アナログスイッチ コンパレータ レベルシフタ 汎用ロジック Index 2 ●● P3 NXP ロジック ●● P4 低抵抗アナログスイッチ/データスイッチ ●● P7 コンパレータ ●●

transistor p14

Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
Contextual Info: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.

Contextual Info: LE AVAILAB DS2408 1-Wire 8-Channel Addressable Switch FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ) Individual Activity Latches Capture

P7 transistor

Abstract: MARKING P7 SOT-323 LDTA113ZWT1G marking A1 TRANSISTOR micro-dot resistor transistor marking P7
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA113ZWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

transistor TD-100

Abstract: transistor TD-100 le NSP6190
Contextual Info: NSP6190 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EM ITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA M AXIMUM RATINGS*

Transistor w1l

Abstract: sample codes of PIC12C508
Contextual Info: DS2408 1-Wire 8-Channel Addressable Switch www.maxim-ic.com FEATURES § § § § § § § § § Eight Channels of Programmable I/O with Open-Drain Outputs On Resistance of PIO Pulldown Transistor 100W max ; Off Resistance 10MW (typ) Individual Activity Latches Capture

Contextual Info: PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA MAXIMUM RATINGS* RATINGS

DTA124ECA

Abstract: DTA124EKA
Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow

p705

Abstract: C5057
Contextual Info: FAIRCHILD J u n e1997 MICONDUCTOR -m NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel e n hance m en t m o de pow er field effect tra nsistors are produced using Fairchild's proprietary, high cell

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

AS885

Abstract: 15p0 8-BIT MAGNITUDE COMPARATORS transistor P1 P SN54AS885 SN74AS885 SDAS236A
Contextual Info: SN54AS885, SN74AS885 8-BIT MAGNITUDE COMPARATORS SDAS236A – DECEMBER 1982 – REVISED JANUARY 1995 • • • • • • • Latchable P-Input Ports With Power-Up Clear Choice of Logical or Arithmetic Two’s Complement Comparison Data and PLE Inputs Utilize pnp Input

AS885

Abstract: SN54AS885 SN74AS885
Contextual Info: SN54AS885, SN74AS885 8-BIT MAGNITUDE COMPARATORS SDAS236A – DECEMBER 1982 – REVISED JANUARY 1995 • • • • • • • Latchable P-Input Ports With Power-Up Clear Choice of Logical or Arithmetic Two’s Complement Comparison Data and PLE Inputs Utilize pnp Input

KYOCERA KBR4.0

Abstract: LC66508B
Contextual Info: Ordering number : EN5003 CMOS LSI LC66556B, 66558B Four-Bit Single-Chip Microcontrollers with 6 k and 8 k Bytes of On-Chip ROM Overview The LC66556B and LC66558B are four-bit single-chip CMOS microcontrollers that integrate on a single chip all the functions required in a microcontroller, including

Contextual Info: MITSUBISHI SEMICONDUCTOR AMERICA, INC. Chapter 3 Electrical Characteristics 3.1 Absolute Maximum R a tin g s. .3-3 3.2 Recommended Operating c o n d itio n s.3-4 3.3 Electrical C h a ra cte ristics 3-6 3.4 USB Physical Layer Timing/

Siemens MTT 95 A 12 N

Abstract: Siemens MTT 95 A 16 N SDA3412X SDA3412 SMD TRANSISTOR N13 Siemens MTT 95 A 08 N N7 2C SMD Transistor transistor smd marking JR P5 smd transistor Siemens MTT 40 A 12 N
Contextual Info: bSE D • fiS3SbOS DQS3SM3 b2b M S I E G SIEM EN S _ SIEMENS AKTIENGESELLSCHAF ■ ' GHz PLL with I 2C Bus and In-Lock Detector SDA 3412X Bipolar 1C Preliminary Data Features • 1-chip system for MPU control I 2C bus • 1 fixed, 3 programmable chip addresses

EP016A

Abstract: HIGH FREQUENCY COUNTER ECL binary Counter MC100EP016AFA
Contextual Info: MC100EP016A 3.3 V ECL 8−Bit Synchronous Binary Up Counter The MC100EP016A is a high−speed synchronous, presettable, cascadeable 8−bit binary counter. Architecture and operation are the same as the ECLinPS family MC100E016 with higher operating speed.

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3