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    P4N60

    Contextual Info: MOTOROLA O rder this docum ent by M G P4N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet P4N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 4.0 A @ 90°C


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    P4N60ED/D MGP4N60ED P4N60 PDF

    P4N60

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M G P4N60ED Insulated Gate Bipolar Transistor w ith Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 4.0 A @ 90“C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


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    MGP4N60ED P4N60 PDF