P4410 Search Results

P4410LV

Contextual Info: P4410LV N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 18mΩ 10A 1,2,3 : SOURCE 4 : GATE 5,6,7,8 : DRAIN G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

regulator 4468

Abstract: HP4410DY HP4410DYT TB334
Contextual Info: P4410DY Data Sheet August 1999 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 10A, 30V • rDS ON = 0.0135Ω at ID = 10A, VGS = 10V • rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount

MA1002 digital LED Clock Module

Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
Contextual Info: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

HP4410DY

Abstract: HP4410DYT TB334 DIODE h4
Contextual Info: P4410DY Data Sheet December 2001 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET Features • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

44683

Abstract: P4410
Contextual Info: P4410DY Semiconductor 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET May 1998 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

regulator 4468

Abstract: HP4410DY HP4410DYT TB334
Contextual Info: P4410DY Data Sheet August 1999 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 10A, 30V • rDS ON = 0.0135Ω at ID = 10A, VGS = 10V • rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

Contextual Info: P4410DY Semiconductor 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET May 1998 Features Description • L o g ic Level G ate D rive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the

Contextual Info: in te g r i I P4410DY D a ta S h e e t A u g u s t 1999 10A, 30V, 0.013S Ohm, Single N-Channel, Logic Level Power MOSFET F ile N u m b e r Features • L ogic Level G a te D rive T h is p o w e r M O S F E T is m a n u facture d u sing a n innovative • 10A, 30V