P3511 Search Results

P5310B

Abstract: 3004 IC
Contextual Info: Hy Hybrid ICs Packaging Specifications Packaging Specifications and Unit for Standard Hybrid 1C Products Part No. Packaging style Quantity/unit Soft case 25 100 B P 3510 Soft case 20 100 B P3511 Soft case 20 120 B P 5020 Soft case 20 100 B P5021 Soft case

opto fet

Abstract: 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
Contextual Info: FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts & MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers

sm 0038 receiver

Abstract: Bookham Technology Bookham P35-1110 NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG
Contextual Info: MESFET for OPTO Receivers Performance Optimised to provide high gm and low gate leakage Features General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS Low gate leakage current, typically 10nA at -5 Volts

opto transistor moc

Abstract: NN12 P35-1110 P35-1110-0 P35-1110-1
Contextual Info: P35-1110 Marconi Optical Components MESFET for Fibre Optic Receivers Performance Optimised to provide high gm and low gate leakage Features • · · · · · · General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver

Contextual Info: P35-1105-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)500m Maximum Operating Temp (øC)150 I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.

Contextual Info: P35-1105-1 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)500m Maximum Operating Temp (øC)150 I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.

Contextual Info: G E C-MARCONI MTLS LTD 25 3 7 b flS Q l QOOOD71 T • GML • PLESSEY T-3I-Z5 Three Five Product Information GaAs MESFET P35-1101 This New Generation M ESFET has been designed for improved performance and is ideally suited for: ■ J - j& a Applications •

Contextual Info: P35-1105-0 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)500m Maximum Operating Temp (øC)150 I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.

Contextual Info: P35-1110-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)350m Maximum Operating Temp (øC)175 I(DSS) Min. (A)15m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.

Contextual Info: P35-1101-0 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)10m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.

Contextual Info: FEATURES MODEL NO. P35-1110 • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver GaAs MESFET For OPTO Receivers ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE

X band attenuator

Abstract: 5V SPST RELAY P35-1110 gaas fet gm pin s for 5V DPDT RELAY GEC Marconi DA0035 DA0784-1 DA0786 DS0052
Contextual Info: DAICO INDUSTRIES INC blE D • ZbDMTEO 0001fl3D *122 ■ DAI FEATURES ■ General Purpose Amplifier In PIN FET Receiver Clï ■ Transim pedance Amplifier For W ide Band PIN FE T Receiver ■ High Gm, Typically 45 mS ■ Low G ate Leakage Current, Typically 10nA At -5 Volts

Contextual Info: P35-1110 Features • General purpose amplifier in PIN FET Receiver • Transimpedance amplifier for wide band PIN FET Receiver • High gm, typically 45mS. • Low gate leakage current, typically lOnA at -5 volts. • No selection required • Low Cgs, typically 0.4pF.

Contextual Info: I NTLS LTD 2S 37bôSQl OQQQQfi? 3 16 ML PLESSEY T -3 /-3 .5 " Three Five Product Information GaAs MESFET for Opto-Receivers P35-1110 ' H . i i :-jiV -*j Performance optimised to provide high gm and lo w gate leakage . Features • General purpose amplifier in

GaAs MESFET

Abstract: P35421 p354101 P35-4252
Contextual Info: GaAs Monolithic Microwave Integrated Circuits • Amplifiers • Switches T W , ' isV.'r, 1 _j P Lm airMRtl] P •: » DAICO INDUSTRIES GaAs MMIC’s SPECIFICATION TABLE Spec Freq GHz Part Number Gain dB Typ VSWR TYP Output Power dBm Noise Figure +13 +22 +22

Contextual Info: P35-1101-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)10m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: DAICO INDUSTRIES INC blE D • ZbDMTEO 0001fl3D *122 ■ DAI FEATURES ■ Transim pedance Amplifier For W ide Band PIN FE T Receiver ■ High Gm, Typically 45 mS ■ Low G ate Leakage Current, Typically 10nA At -5 Volts ■ No Selection Required ■ Low Cgs, Typically 0.4 pF

Ablebond 36-2

Abstract: Multicore Solders
Contextual Info: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators

356 opto

Abstract: 80In/15pb/5ag P35-1110 NN12 P35-1110-0 P35-1110-1 micro-x 420 bookham
Contextual Info: Data sheet MESFET for OPTO Receivers Features • General purpose amplifier in PIN FET receiver Performance Optimised to provide high gm • Transimpedance amplifier for wide band PIN FET receiver and low gate leakage • High gm, typically 45mS • Low gate leakage current,

marconi

Contextual Info: FEATURES ÂféO Ô EL NO. • General Purpose Amplifier In PIN FET Receiver Ï ^ # 8 6 -1 1 1 0 ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE ■ No Selection Required

microwave MARCONI

Abstract: NN12 P35-1110 P35-1110-0 P35-1110-1
Contextual Info: P35-1110 MESFET FOR OPTO RECEIVERS Performance Optimised to provide high gm and low gate leakage Features • • • • • • • General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

mmic 211

Abstract: P35421
Contextual Info: GaAs Monolithic Microwave Integrated Circuits • Amplifiers • Switches H f: 203 ' T • S 3 -. L-<- DAICO INDUSTRIES GaAs MMIC’s SPECIFICATION TABLE Spec Freq GHz Part Number GaAs MMIC AMPLIFIERS P35-4104 0.05-3.0 0.05-3.5 P35-4100 0.5-3.5 P35-4101 Gain