P3503EVG Search Results

P3503EVG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
P3503EVG		Niko Semiconductor	P-Channel Logic Level Enhancement FET	Original	PDF	140.94KB	5

P3503EVG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sem 2005 Abstract: P3503EVG Contextual Info: P3503EVG NIKO-SEM P-Channel Logic Level Enhancement SOP-8 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 35mΩ -8A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P3503EVG Jan-06-2005 sem 2005 P3503EVG	PDF
Contextual Info: Single P-channel MOSFET ELM34401AA-N •General description ■Features ELM34401AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-8A Rds(on) < 35mΩ (Vgs=-10V) Rds(on) < 60mΩ (Vgs=-4.5V)	Original	ELM34401AA-N ELM34401AA-N P-ChannelELM34401AA-N P3503EVG Jan-06-2005	PDF
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G	PDF

Catalog Datasheet

Type

Document Tags

PDF

sem 2005

Abstract: P3503EVG
Contextual Info: P3503EVG NIKO-SEM P-Channel Logic Level Enhancement SOP-8 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 35mΩ -8A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Original

P3503EVG Jan-06-2005 sem 2005 P3503EVG

PDF

Contextual Info: Single P-channel MOSFET ELM34401AA-N •General description ■Features ELM34401AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-8A Rds(on) < 35mΩ (Vgs=-10V) Rds(on) < 60mΩ (Vgs=-4.5V)

Original

ELM34401AA-N ELM34401AA-N P-ChannelELM34401AA-N P3503EVG Jan-06-2005

PDF

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

Original

O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

PDF