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    P2F TRANSISTOR Search Results

    P2F TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    P2F TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor SMD P2F

    Abstract: transistor smd marking KA smd transistor p1p SMD Code p2f transistor smd P2B TRANSISTOR SMD CODE PACKAGE SOT89 smd p2f TRANSISTOR p1p ON MARKING P2F p2f smd
    Contextual Info: SMD Switching Transistors SMD® Switching Transistors Description Mechanical Data Philips Components switching transistors are fabricated using gold doping to reduce the minority carriers in the junction, thus improving the transition performance of the


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    ot-23ot-89ot-223pmbt4401+16pmbt4403pxt2222apxt2907apxt4401pxt4403pzt2222atransistor smd p2ftransistor smd marking kasmd transistor p1psmd code p2ftransistor smd p2btransistor smd code package sot89smd p2ftransistor p1pon marking p2fp2f smd PDF

    5cp smd

    Abstract: smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23
    Contextual Info: General Purpose SMD PNP Transistors 11 General Purpose SMD® PNP Transistors Description Mechanical Data Philips Components general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


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    ot-23ot-89ot-143ot-223+105cp smdsmd 3fp5bp smdsmd code marking 2a sot23p2g smdsmd code bjp 60bc857b sot233bp smdmarking codes transistors sot-23 26jb marking sot-23 PDF

    transistor P2F

    Abstract: ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f
    Contextual Info: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


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    pzt2907at1ot-223pzt2222at1transistor p2f+5on marking p2fp2f transistorpzt2907at1gpzt2907at3on semiconductor p2f PDF

    transistor P2F

    Abstract: ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G
    Contextual Info: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


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    pzt2907at1ot-223pzt2222at1transistor p2f+7on marking p2fsot223 p2fpzt2907at1gsot-223 p2fp2f 45pzt2907at3pzt2907at3g PDF

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


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    2pa1576qsc-70bc808wot323+142pa1576rbc808-162pa1576sbc808-16wt06 marking sot23bc857 3ftmarking 6ct sot23sot89 marking cecmarking da sot89marking bl sot89sot23 "marking code" t04sot89 marking codemarking t04 sot23marking 1g sot23 PDF

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


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    2pa1576q2pa1576r2pa1576s2pa17+162pa1774r2pa1774s2pb709aq2pb709ar2pb709as2pb710aqmarking code p07 sot89marking code 3fpp1m marking code sot 223pdtc* marking codep04 sot223ftz marking codet07 markingp2f sot23marking t04 sot23marking code p1f PDF

    p2f sot-223

    Abstract: PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3
    Contextual Info: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


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    Contextual Info: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


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    pzt2907at1spzt2907at1got-223pzt2222at1+1pzt2907at1/d PDF

    sot-223 body marking D K Q F

    Abstract: transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G
    Contextual Info: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


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    pzt2907at1spzt2907at1got-223pzt2222at1+7aec-q101pzt2907at1/dsot-223 body marking d k q ftransistor p2fon semiconductor p2fp2f 45sot-223 body marking a g PDF

    p2f sot-223

    Abstract: PZT2907AT1G transistor P2F on semiconductor p2f MARKING P2F p2F 45 PZT2907AT1G data AYW marking code IC DATASHEET OF IC 713 1N916
    Contextual Info: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


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    pzt2907at1ot-223pzt2222at1pzt2907at1/d+10p2f sot-223pzt2907at1gtransistor p2fon semiconductor p2fmarking p2fp2f 45pzt2907at1g dataayw marking code icdatasheet of ic 7131n916 PDF

    Contextual Info: PZT2907A PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com


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    pzt2907aot-223pzt2222at1aec-q101+1pzt2907at1/d PDF

    transistor SMD P2F

    Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
    Contextual Info: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage


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    pxt2907atransistor smd p2fsmd p2f transistorsmd p2f+7transistor p2fp2f smd transistormarking p2fsmd transistor marking 26smd transistor p2ftransistor marking p2fon marking p2f PDF

    WTM2222A

    Abstract: WTM2907A MARKING 2907A npn 2907A wtm290
    Contextual Info: WTM2907A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER Features: 2 3 * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With NPN Type WTM2222A ABSOLUTE MAXIMUM RATINGS (TA=25˚C)


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    wtm2907aot-89wtm2222a24-mar-06+4500typmarking 2907anpn 2907awtm290 PDF

    PMBT2907A

    Abstract: transistor P2F transistor marking p2f PMBT2907
    Contextual Info: Philips Semiconductors Product specification PNP switching transistors PMBT2907; PMBT2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification.


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    pmbt2907pmbt2907apmbt2222pmbt2222a+2transistor p2ftransistor marking p2f PDF

    Contextual Info: Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base Switching and linear amplification. DESCRIPTION


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    pxt2907apxt2222a PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E pitaxial Transistor PZT2907AT1 M otorola Preferred Device T h is PNP S ilico n E pitaxial tra n s is to r is d e sig ned fo r use in lin e a r and switching applications. The device is housed in the SOT-223 package which is


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    pzt2907at1ot-223pzt2222at1b3ti75ss+1j357b PDF

    MARKING P2F

    Contextual Info: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


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    ot-223pzt2222at1pzt2907at1inch/1000+3pzt2907at3inch/4000marking p2f PDF

    MARKING P2F

    Abstract: transistor P2F PZT2907AT3 motorola P2F
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E p itaxial Transistor PZT2907AT1 M otorola P referred Devios This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


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    ot-223pzt2222at1pzt2907at1marking p2f+3transistor p2fpzt2907at3motorola p2f PDF

    Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


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    fpd2000as350ma PDF

    motorola p1f

    Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
    Contextual Info: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1


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    ot-223318e-04bcp56t1bcp53t1+14pzt2222at1pzt2907at1bsp52t1pzta14t1motorola p1fp1f motorolasot-223 p1fp1f markingp2f markingdevice markingah sot223npn marking bhbs3 markingas3 marking PDF

    1am surface mount diode

    Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
    Contextual Info: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC


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    o-226aao-236abot-23ot-223+13mmbta42lt1mmbt5551lt1bsp52t11am surface mount diodec8452gm sot-23 transistorg1 transistor sot 23 pnp2f pnp sot23p1f markingas3 sot223p2f sot-223c845 to 92sot-223 p1f PDF

    SOT89 MARKING CODE 3D

    Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
    Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK


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    PHEMT marking code a

    Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
    Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


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    fpd4000afphemt marking code afet p2fphemt fet marking l+2transistor code p2fphemt fet marking a PDF

    L7E transistor

    Abstract: PMBT2907A PMBT2907 1N916
    Contextual Info: • 1^53^31 002SÖS7 bD5 H A P X N AUER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.


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    pmbt2907pmbt2907abbs3t311n916+1l7e transistor PDF