P250 Search Results

p31b

Abstract: p31c p23c P31A p35b P35CM P31D P06A p26b p03cm
Contextual Info: DO-214AA Package Symbolization DO-214AA Package Symbolization Part Number Part Number Symbolized Catalog Symbolized Catalog P0080SA P-8A P1100SB P11B P2300SD Symbolized P23D P0080SB P-8B P1100SC P11C P2300SC MC P23CM P0080SC P-8C P1100SD P11D P2500SA P25A

Contextual Info: DATA SHEET CLL620-0101B2-403M1C5 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P2508 06/13 R1 1113 DATA SHEET

Contextual Info: Part: P2500SB Series: LCAS Asymmetrical Discrete SIDACtor Device Technology:SIDACtor® Devices PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Package Size/Form Factor size DO-214AA Pins for Peak Off-state Voltage V_DRM-1 Pins V DRM 1

P2503BDG

Abstract: P2503BD nikos EQUIVALENT* P2503 P2503 niko-sem
Contextual Info: NIKO-SEM P2503BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 12A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

BCAP0350

Abstract: BCAP0310 BCAP0350E250 BOOSTCAP BCAP0350 BCAP0310 discharge 310F bc 877 CH-1728 E250 P250
Contextual Info: DATASHEET BC SERIES ULTRACAPACITORS BCAP0310 P250 BCAP0350 E250 The BC Series ultracapacitor product line gives industrial customers a wide range of choices to meet their energy storage and power delivery requirements. The 350F Energy cell provides higher energy for longer discharge applications, while the 310F Power

p2504bdg

Abstract: nikos p2504 sem 2005 nikos transistor niko-sem dpak code P2504BD
Contextual Info: NIKO-SEM N-Channel Logic Level Enhancement P2504BDG Mode Field Effect Transistor Preliminary TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 25mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

P2501A

Abstract: PA-SO86A-P-Z-01
Contextual Info: 35.56mm [1.400"] P2501A 27.94mm [1.100"] Top View 0.5mm [0.020"] typ. Bottom View 2.54mm [0.100"] 23.4mm [0.921"] 11.76mm -01W version 3 level, 0.025" Sqr. WW pin 14.81mm [0.583"] 22.22mm 12.88mm 3.24mm [0.128"] 0.5mm 2 0.46mm [0.018"] 17.78mm 1 10.16mm

p31b

Abstract: P13B p15c sidactor p15c p31c P07CM P03CM P31A p35b p06-a
Contextual Info: SIDACtor Package Symbolization SIDACtor Package Symbolization Part Number Part Number Symbolized Catalog Symbolized Catalog P0080SA P-8A P1100SB P11B P2300SD Symbolized P23D P0080SB P-8B P1100SC P11C P2300SC MC P23CM P0080SC P-8C P1100SD P11D P2500SA P25A

p2450

Abstract: HLMP2685 HLMP-2655 LMP-2350 HLMP-2685
Contextual Info: Light Bars Package Outline Color Part Number Light Emitting Area Luminous Intensity per Segment Description pcd typ. Small re cta n ­ gular, rugged HLMP2300 Red e n ca p su la ­ ted H LM P2400 Yellow H LM P2500 Green Large re c t­ angular, ru g ­ ged e n c a p ­

Contextual Info: Preliminary P2500M 25.0 AMPS. Glass Passivated Rectifier R-6 Features — Glass passivated chip junction — High current capability, low VF — High reliability — High surge current capability — Low power loss — Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: P2500M 25.0 AMPS. Glass Passivated Rectifier P2500 Features — Glass passivated chip junction — High current capability, low VF — High reliability — High surge current capability — Low power loss — Green compound with suffix "G" on packing code & prefix "G" on datecode

P2503NVG

Abstract: SEM 2004 P2503 P2503N P2503NV Field Effect Transistor nikos EQUIVALENT* P2503 Niko Semiconductor SOP-8
Contextual Info: NIKO-SEM P2503NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 25mΩ 7A P-Channel -30 45mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

p31b

Abstract: p31c P06A diode P03AM p23c p-8cm p03cm DO-214AA package p31b diode P31D
Contextual Info: DO-214AA Package Symbolization DO-214AA Package Symbolization P0080SA P0080SA MC Part Number Symbolized Catalog Part Number Symbolized Catalog P-8A P1101SA P01A P2500SD P-8AM P1101SC P01C P2500SC MC Symbolized P25D P25CM P0080SB P-8B P1200SA P12A P2600SA P26A

Contextual Info: Part: P2500SBL Series: LCAS Asymmetrical Discrete SIDACtor Device Technology:SIDACtor® Devices PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Package Size/Form Factor size DO-214AA Pins for Peak Off-state Voltage V_DRM-1 Pins V DRM 1

Contextual Info: P2500T . P2500Y P2500T . P2500Y Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2014-06-06 Nominal current Nennstrom Type 7.5±0.1 62.5±0.5 Ø 8±0.1 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 1300.2000 V

Contextual Info: NEXT ASSY, USED GN NL P250 CJ REV, DESCRIPTION DATE APPRDVPD A 10051868 ECO FIRST RELEASE 04/04/07 VIN CENT B 10052280 ADD P E G BGM I N T O N L P 2 2 5 0 C J 04/27/07 R E N K DDN C 1 0052834 U P D A T E D E S C R I P T I O N DP S C R F V 06/01/07 VIN CENT

p23c

Abstract: P8AM p03a P14A p35b P31A P15C P20CM P03AM P182A
Contextual Info: DO-214AA Package Symbolization DO-214AA Package Symbolization P0080SA P0080SA MC Part Number Symbolized Catalog Part Number Symbolized Catalog Symbolized P-8A P1101SA P01A P2500SD P-8AM P1101SC P01C P2500SC MC P25D P25CM P0080SB P-8B P1200SA P12A P2600SA P26A

Contextual Info: P2500ATL . P2500MTL -3 Axial lead diode Standard silicon rectifier diodes P2500ATL . P2500MTL =  <  4  <  < + 0+  4  <  < +   <    < 3  2 6- 2 B- 2 1- 2 C- 2 D- 2 E- #= # 2 5  " 

Contextual Info: P250-1215 250 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P250-1215 is a 250 Watt 960-1215 MHz Pallet Amplifier Features: • 250 Watt Pulse Width 20uS, Duty cycle 5% RF Output Power (16 Watts Input Power)  LDMOS Technology  36V operation

Contextual Info: P2500A . P2500M P2500A . P2500M Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-09-14 Nominal current Nennstrom Type 7,5 ±0.1 62.5 ±0.5 Ø 8 ±0.1 Ø 1.2 ±0.05 Dimensions - Maße [mm] 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung

RJ45 datasheet 8P8C

Abstract: 8P8C P250T 8P8C RJ45 8P8C Plug JACK RJ45 8P8C 8p8c datasheet RJ45 RJ45 8p8c datasheet
Contextual Info: Product Datasheet P250T RJ45 Doubler US JACK1 8 - 1 8 - 1 US PLUG 8 1 US JACK2 US PLUG US JACK1 8P8C US JACK2(8P8C) 1-1-1 2-2-2 3-3-3 4-4-4

P2503HVG

Abstract: P2503 niko-sem
Contextual Info: NIKO-SEM P2503HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Contextual Info: P2500T . P2500Y P2500T . P2500Y Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-08-22 Nominal current Nennstrom Type 7.5±0.1 62.5±0.5 Ø 8±0.1 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 1300.2000 V

Contextual Info: P2500A . P2500M P2500A . P2500M Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-24 Nominal current Nennstrom Type 7,5 ±0.1 62.5 ±0.5 Ø 8 ±0.1 Ø 1.2 ±0.05 Dimensions - Maße [mm] 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung