P21N6 Search Results
P21N6 Price and Stock
Vishay Intertechnologies IRFP21N60LPBFTransistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC |
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IRFP21N60LPBF | 1 |
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IRFP21N60LPBF | 3,476 |
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IRFP21N60LPBF | 75 |
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Vishay Intertechnologies SIHP21N60EF-GE3Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W; TO220AB |
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SIHP21N60EF-GE3 | 1 |
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SIHP21N60EF-GE3 | Tape & Reel | 49 Weeks | 1,000 |
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SIHP21N60EF-GE3 | 1,910 |
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SIHP21N60EF-GE3 | Bulk | 1,000 |
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SIHP21N60EF-GE3 | Tube | 1,000 |
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SIHP21N60EF-GE3 | 42 Weeks | 50 |
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STMicroelectronics STP21N65M5Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A |
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STP21N65M5 | 1 |
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STP21N65M5 | Tube | 36 Weeks | 1,000 |
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STP21N65M5 |
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STP21N65M5 | 1 |
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STP21N65M5 | 9,080 |
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STP21N65M5 | 200 |
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STP21N65M5 | 1,000 | 25 Weeks | 50 |
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STP21N65M5 | 25 Weeks | 50 |
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STP21N65M5 | 4,500 |
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STP21N65M5 | 45,000 |
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Vishay Intertechnologies SIHP21N60EF-BE3N-CHANNEL 600V - Tape and Reel (Alt: SIHP21N60EF-BE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHP21N60EF-BE3 | Tape & Reel | 49 Weeks | 1,000 |
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SIHP21N60EF-BE3 |
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SIHP21N60EF-BE3 | Bulk | 1,000 |
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SIHP21N60EF-BE3 | Tube | 10,000 | 100 |
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SIHP21N60EF-BE3 | 51 Weeks | 50 |
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Vishay Intertechnologies SIHP21N65EF-GE3- Tape and Reel (Alt: SIHP21N65EF-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHP21N65EF-GE3 | Tape & Reel | 49 Weeks | 1,000 |
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SIHP21N65EF-GE3 | 925 |
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P21N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M P21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high |
OCR Scan |
p21n60e/dgp21n60e21a-06o-220ab | |
p21n6Contextual Info: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M P21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced |
OCR Scan |
p21n60e/dp21n6 |