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    P21N6 Search Results

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    Rochester Electronics LLC FCP21N60N

    N-CHANNEL, MOSFET
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    DigiKey () FCP21N60N Tube 19,389 114
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    FCP21N60N Bulk 6,400 114
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    STMicroelectronics STP21N65M5

    MOSFET N-CH 650V 17A TO220AB
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    DigiKey STP21N65M5 Tube 538 1
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    Avnet Americas STP21N65M5 Tube 14 Weeks 1,000
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    Mouser Electronics STP21N65M5 919
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    STMicroelectronics STP21N65M5 919 1
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    TME STP21N65M5 1
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    ComSIT USA STP21N65M5 222
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    Avnet Silica STP21N65M5 1,000 15 Weeks 50
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    EBV Elektronik STP21N65M5 16 Weeks 50
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    IBS Electronics STP21N65M5 1,000
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    Win Source Electronics STP21N65M5 45,000
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    onsemi FCP21N60N

    MOSFET N-CH 600V TO220-3
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    DigiKey FCP21N60N Tube
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    Rochester Electronics FCP21N60N 6,400 1
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    Vishay Siliconix IRFP21N60L

    MOSFET N-CH 600V 21A TO247-3
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    DigiKey IRFP21N60L Tube 500
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    Vishay Siliconix IRFP21N60LPBF

    MOSFET N-CH 600V 21A TO247-3
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    DigiKey IRFP21N60LPBF Tube 500
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    ComSIT USA IRFP21N60LPBF 175
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    P21N6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M P21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


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    P21N60E/D GP21N60E 21A-06 O-220AB PDF

    p21n6

    Contextual Info: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M P21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


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    P21N60E/D p21n6 PDF