P2103N Search Results

P2103NVG

Abstract: P2103NV p2103n P-Channel Enhancement Mode Field Effect Transistor
Contextual Info: NIKO-SEM P2103NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

P2103NV

Abstract: nikos p2103n niko-sem
Contextual Info: NIKO-SEM P2103NV N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P2103ND5G

Contextual Info: コンプリメンタリーパワー MOSFET ELM35604KA-S •概要 ■特長 ELM35604KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=8.5A

复合

Abstract: ELM35604KA P2103ND5G
Contextual Info: 复合沟道 MOSFET ELM35604KA-S •概要 ■特点 ELM35604KA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=8.5A ·Id=-7A

P2103ND5G

Contextual Info: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

Contextual Info: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)

复合

Abstract: ELM34601AA
Contextual Info: 复合沟道 MOSFET ELM34601AA-N •概要 ■特点 ELM34601AA-N 是低输入电容低工 作电压、低导通电阻的大电流 MOSFET。 N 沟道 •Vds=30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 21mΩ(Vgs=10V) ·Rds(on) < 35mΩ(Vgs=-10V)

Contextual Info: Complementary MOSFET ELM34601AA-N •General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

Contextual Info: Complementary MOSFET ELM34601AA-N •General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)

Contextual Info: コンプリメンタリーパワー MOSFET ELM34601AA-N •概要 ■特長 ELM34601AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。