P1995 Search Results

Contextual Info: ADVANCE M T9LD T 272(X)(S) 2 MEG X 72 DRAM M OD ULE I^ IIC R O N DRAM B a / \ r M i i M U D U L W W 2 MEG x 72 rC 16 MEGABYTE, ECC, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES OPTIONS MARKING • T im in g 60n s access 70n s access -6

4C4M4B1

Contextual Info: PRELIM INARY MT4C4M4B1 4 MEG X 4 DRAM l^ iiC R n r s j DRAM 4 MEG x 4 DRAM 5V, FAST PAGE MODE PIN A SSIG N M E N T Top View • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single +5.0V ±10% pow er supply

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1620 Jun-97 9720 C2 OMEDATA DD709222AAC 1.2µ OX/NI 08 SOIC 208 STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

P-20606

Abstract: c19643 DS1868 p19500 p1908 DD642 P19-50 B59728 P2050
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 PRODUCT DS1302 DS1302 DS1302 DS1868 DS21S07A DS21S07A DS21S07A DS2401 DS2401 DS2401 DS80C320 DS80C320 DS80C320 DS80C320 MONITOR DATE JOB NO. Mar-97 Jun-97 Sep-97 Feb-97 Feb-97

MT58LC32K36C4

Contextual Info: MT58LC32K36C4 32 KX 36 SYNCBURST SRAM |u iic :n o N 32K x 36 SRAM I +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access tim es: 4.5, 5, 6, 7 and 8ns

DS1868

Abstract: DL6-11 c19643 dallas date code ds12887 P1788 P-18182 dk52
Contextual Info: RELIABILITY MONITOR PRODUCT DS1302 DS1302 DS1302 DS1302 DS1868 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V.SUMMARY DS1

MT4LC16257

Abstract: 0D09A
Contextual Info: ADVANCE M T4LC16257 S 256K X 16 DRAM |V |IC =RO N 256K x 16 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH T1 FEATURES • • • • • • • • • • High-perform ance CM OS silicon-gate process Single +3.3V +0.3V power supply* Low power, 0.3m W standby; 150mW active, typical

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2401 Jun-97 9725 B2 CARSEM DM708087ACA 1.2µ OX/NI 03 TO-92 STRESS/JOB NO. Infant / High voltage Life 125°C, 7.0 V. P-19954, P-19987 READPOINT