CA-QFE144SE-L-Z-T-02
Abstract: P1559
Contextual Info: 73.66mm [2.900"] P1559 SA HINGE 2.54mm typ. [.100"] 58.42mm [2.300"] I.E. HINGE 4 29.08mm [1.570"] [1.145"] assembled 1 3 2 1 Substrate: 1.59mm ±0.18mm [0.0625" ±0.007"] FR4/G10 or equivalent high temp material. 17µm [1/2 oz.] Cu clad. SnPb plating. 2 Pins: material- Brass Alloy 360 1/2 hard; finish0.25µm [10µ"] Au over 1.27µm [50µ"] Ni min. .
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p1559fr4/g10ca-qfe144se-l-z-t-02 |
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DTS108
Abstract: 2n2585 DTS103 DTS106 BUY27
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+10sft2686000n2n2341350kta75om0dts1082n2585dts103dts106buy27
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TI3027
Abstract: TI3028 2N301B 2SB477 TI-3030 B1368B MT41a 2SB205 nkt501 MP1535A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110200ksaady2211ou0+15250kfady23250ktady24mht1902ti3027ti30282n301b2sb477ti-3030b1368bmt41a2sb205nkt501mp1535a
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MHT1810
Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0mht18102n18211130032n463mht20082n2585a580-1202a580-1603asz16mp1534
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AD166
Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT
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ad1662sb123 transistor2n1434asz16+1lt5085
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B170008
Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0b170008113003b170002b170003b170007a580-04032n2585b170004sdt8111b170005
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KL8503
Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0kl8503ck256ck258ck311ck312ck313ck3142sb26km7002ms7 package
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2N2128
Abstract: T4 0660 2N5577 2N5579 MD38
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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npn11075op0a580-2405250ksa+10sft2686000n2n2341350kta75om02n2128t4 06602n55772n5579md38
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TI3028
Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0ti3028ti3027ti-30282s52nkt501mp1560ati3029ti3030transistor b1181mp1535a
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2SC102 transistor
Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om02sc102 transistor2sc102transistor 2sc1021763-0625micro transistor 12032sc5192sc520tk30556tk30557tk30558
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ZT2015
Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+14sft2686000n2n2341350kta75om0zt2015sdt1000mht8012857ma400mstc10941205tb1700260805t
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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sem 5027atransistor bd 540 lysmc710g131-80 wj 89+6mc707g2n328ln4005 diode reverse current and voltagemc708gc844pts36a
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