B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
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b083du82720a110dtda4100+6ub8830dv40511dtaa981a109dsy 710ic 7447
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DTS108
Abstract: 2n2585 DTS103 DTS106 BUY27
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+10sft2686000n2n2341350kta75om0dts1082n2585dts103dts106buy27
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Contextual Info: THIS D E S IG N HAS NO T B E E N A P P R O V E D B Y E N G IN E E R IN G DATF: COMPANY: □ ACCEFTANCE OF DRAWING CUSTOMFR SIGNATURF: □ ACCEPTED WITH DEVIATIONS LISTED PRINTFD NAMF: BO NOT D IS T R IB U T E THIS P R IN T A S P-15503-01 {2 POS .06 0 ZO+ .0 10
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URG 30100
Abstract: rur 450 UR810 IC p815 UR1520 P3020 ruru100 URP1560 RD6120 UR840
Contextual Info: HARRIS ULTRA-FAST RECOVERY RECTIFIER PRODUCT LINE & V R U R D 410 R U R D 610 R U R D 410S R URD610S 6 0 n s 1.5V RURD460 1.5 V 60ns 1 5V 3 5 n s 1.0 V 6 0 n s 1.5 V M ÜR815 R U R P815 M UR820 RURP820 3 5 n s 1.0V M UR1520 R U R P1520 35ns+ 1 .0 5 V 3 5 n s
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o-251o-252t0-247o-218+14urd610sur810p3010rurp3015p3020rurp3040urg 30100rur 450ic p815ur1520ruru100urp1560rd6120ur840
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AR1310
Abstract: AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 708-459-3400 Fax 708-459-2708 _ «OHI C hicago M iniature WHERE INNOVATION COMES TO LIGHT C o m p e titiv e Cross R e fe re n c e Competitor Page
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tly114aqtly118ptly123tly124+15tly132tly133atly134atly143tly144ar1310ar3010ar9102ar1303ms 25237-327telefunken tlx 22 4g5602mv55arca 7646rca 7945
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MHT1810
Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0mht18102n18211130032n463mht20082n2585a580-1202a580-1603asz16mp1534
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Schaevitz
Abstract: P1502 Schaevitz pressure transducer P P1590 Schaevitz Sensors 89/336/EEC Schaevitz pressure transducer series 5
Contextual Info: P1500 Series High Performance Low Level Pressure Sensor Schaevitz P1500 Series Strain Gauge Pressure Transducers are high grade sensors that provide highly precise measurement of absolute or vented gauge pressures over wide temperature ranges. Standard versions of this transducer use a 17-4 pH
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p1500p1580schaevitzp1502+5schaevitz pressure transducer pp1590schaevitz sensors89/336/eecschaevitz pressure transducer series 5
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AD166
Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT
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ad1662sb123 transistor2n1434asz16+1lt5085
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B170008
Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0b170008113003b170002b170003b170007a580-04032n2585b170004sdt8111b170005
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2N2128
Abstract: T4 0660 2N5577 2N5579 MD38
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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npn11075op0a580-2405250ksa+10sft2686000n2n2341350kta75om02n2128t4 06602n55772n5579md38
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TI3028
Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0ti3028ti3027ti-30282s52nkt501mp1560ati3029ti3030transistor b1181mp1535a
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Contextual Info: CBB 131 DL Series Polypropylene Film Capacitors for DC-Link Applications Features Very low dissipation factor - High ripple current capability - Self-healing - Long lifetime - Aluminum case - RoHS compliant 2011/65/EU CBB 131 DL Plastic case CBB 136 DP Applications
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2011/65/eu60068-nly |
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VQA 23
Abstract: Funkamateur VQA 13 ESBR5501 vqa 33 FUNKAMATEUR - Bauelementeinformation VQA13 esbg5501 CQX51 TLUY5400
Contextual Info: FUNKAMATEUR - Bauelementeinformation Vergleichslisten Optoelektronik Uchtemitterdioden Lichtemitterdioden, Durchmesser 5 mm o Farbe WF rot rot rot grün gelb rot grün gelb orange rot grün VQA VQA VOA VQA VQA VQA VQA VQA VQA VQA VQA 10 13 13-1 23 33 16 26
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ls5160cqx51hlmp-33tls1541+15sar55114tlr116a3tlur5400cqy24hlmp-3000tlr114a3vqa 23funkamateurvqa 13esbr5501vqa 33funkamateur - bauelementeinformationvqa13esbg5501tluy5400
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2SC102 transistor
Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om02sc102 transistor2sc102transistor 2sc1021763-0625micro transistor 12032sc5192sc520tk30556tk30557tk30558
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powerflex 753 programming manual
Abstract: rockwell powerflex 753 wiring diagram heidenhain rod 426 1024 heidenhain rod 426 rod 323 heidenhain hengstler 890 manual 20HIM-UM001 HEIDENHAIN rod 529 NSA 2000 inverter manual heidenhain rod 456
Contextual Info: Programming Manual PowerFlex 750-Series AC Drives Firmware Versions:1.xxx…10.xxx Important User Information Read this document and the documents listed in the additional resources section about installation, configuration, and operation of this equipment before you install, configure, operate, or maintain this product. Users are required to
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750-seriesra-du002750-pm001j-en-p750-pm001i-en-p+10powerflex 753 programming manualrockwell powerflex 753 wiring diagramheidenhain rod 426 1024heidenhain rod 426rod 323 heidenhainhengstler 890 manual20him-um001heidenhain rod 529nsa 2000 inverter manualheidenhain rod 456
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P1560
Abstract: rp1550 HRP1560 P1550 P1540
Contextual Info: RHRP1540, P1550, RHRP1560 00 HARRIS I X S E M I C O N D U C T O R 15A, 400V - 600V Hyperfast Diodes April 1995 Package Features JE D E C TO -220AC • H yp erfa s t w ith S oft R e c o v e ry . <35ns ANODE CATHODE
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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sem 5027atransistor bd 540 lysmc710g131-80 wj 89+6mc707g2n328ln4005 diode reverse current and voltagemc708gc844pts36a
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