P1465 Search Results
P1465 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| P1465 | Hamamatsu | CdS photoconductive cells, Metal Can Type | Scan | 72KB | 1 | ||
| P1465-01 | Hamamatsu | Glass Bulb Type & Assembly Types for Flame Monitors | Scan | 92.16KB | 1 | ||
| P1465-02 | Hamamatsu | Glass Bulb Type & Assembly Types for Flame Monitors | Scan | 92.16KB | 1 | ||
| P1465-04 | Hamamatsu Photonics | DUAL ELEMENT TYPE PYROELECTRIC DETECTOR | Scan | 2.93MB | 10 | 
P1465 Price and Stock
Hammond Manufacturing RP1465BOX ABS GRAY 8.66"L X 6.5"W | 
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RP1465 | Bulk | 90 | 1 | 
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RP1465 | 150 | 
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RP1465 | Bulk | 1 | 3 Weeks | 1 | 
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RP1465 | 
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RP1465 | 50 | 
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Hammond Manufacturing RP1465CBOX ABS GRAY/CLR 8.66"L X 6.5"W | 
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RP1465C | Bulk | 3 Weeks | 1 | 
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RP1465C | 37 | 1 | 
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RP1465C | 
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Vishay Semiconductors TSOP14656SENSOR REMOTE REC 56.0KHZ 30M | 
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On-Shore Technology Inc OSTVP146584TERM BLK 14P SIDE ENTRY 10.16MM | 
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OSTVP146584 | Bulk | 6 | 
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On-Shore Technology Inc OSTVP146585TERM BLK 14P SIDE ENTRY 10.16MM | 
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P1465 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
p628
Abstract: P930-06 P1465-02 P1465-01 P586 P587 BY100 
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 OCR Scan  | 
P93005 P930-05, P1465-01 P930-06, P1465-02 0004b53 p628 P930-06 P1465-02 P1465-01 P586 P587 BY100 | |
Low Capacitance MOS FET
Abstract: PS7341A-1B PS7341AL-1B 
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PS7341A-1B PS7341AL-1B PS7341AL-1B Low Capacitance MOS FET | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 
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transistor 1608
Abstract: 2SC5606 2SC5606-T1 PU10781JJ01V0DS MA3510 
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2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A PU10781JJ01V0DS P14658JJ3V0DS00 PU10781JJ01V0DS transistor 1608 2SC5606 2SC5606-T1 MA3510 | |
2SC5606
Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave 
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2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A M8E0904E 2SC5606 2SC5606-T1 ultra low noise NPN transistor nec microwave | |
NE66219
Abstract: NEC66219 2SC5606 
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NE66219 2SC5606 NEC66219 2SC5606 NE66219-T1 2SC5606-T1 NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A | |
2SC5606
Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504 
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2SC5606 2SC5606-T1 2SC5606 transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504 | |
2SC5606
Abstract: 2SC5606-T1 
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 Original  | 
M8E0904E 2SC5606 2SC5606-T1 | |
P621
Abstract: P201B 
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 OCR Scan  | 
P1114-01 P1114-04 P1465 0004bS2 P621 P201B | |
P930-06Contextual Info: Glass Bulb Types & Assembly Types FOR FLAME MONITORS C h a ra cte ristics * 5 at 25°d Absolute Maximum Ratings Type No. O ut line A pplied V oltage at 25°C Allowable Power Dissipation at 25°C (Vdc) (mW) A m bient T em perature Ta (°C) Peak Response  | 
 OCR Scan  | 
P930-05 P930-06 P1465-01 P1465-02 P930-06, | |
thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 
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11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 | |
P930-05Contextual Info: CdS Cells CdS Photoconductive Cells ¡’aonaps Type Mo Peak Semibviw wsueiangffl ip {nm* (m«i (U nle ss o th e rw ise noted, Typ. Ta-~25 C) B fw ita w *2 10 a Mfo. Max. fH i, O if Min. nis^Tmw Fall Time t if 0 to 63 % IM to J7N n» to /» T *3 r: iM tii  | 
 OCR Scan  | 
P1114-04 P1465 P201D P3872 P201D-5R P380-5R P722-5R P1082-03 Pt201 P1201-01 P930-05 | |
"Pyroelectric Detector"
Abstract: Pyroelectric Detectors pyroelectric amplifier circuit pyroelectric sensor elements P7156 longpass Fresnel lens KT603A P7178 Fresnel lenses 
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P7178 PYRC0014EA lenses49) SE-171 KPYR1006E04 "Pyroelectric Detector" Pyroelectric Detectors pyroelectric amplifier circuit pyroelectric sensor elements P7156 longpass Fresnel lens KT603A Fresnel lenses | |
2SC5606
Abstract: 2SC5606-T1 ic ta 7698 
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2SC5606 2SC5606-T1 2SC5606 2SC5606-T1 ic ta 7698 | |
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