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    P13 TRANSISTOR Search Results

    P13 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    P13 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Pressure sensor 2 PNP transistor switching outputs PK010R-P13-2UP8X-V1141 • Compact design ■ Pressure and vacuum monitoring ■ Rotatable body ■ Display rotatable by 180° ■ Excellent EMC properties ■ Pressure range 0 … 10 bar rel. Wiring diagram


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    pk010r-p13-2up8x-v114110bar04psi30vdc+22013-07-13t17d-45472 PDF

    Contextual Info: Pressure sensor 2 PNP transistor switching outputs PK01VR-P13-2UP8X-V1141 • Compact design ■ Pressure and vacuum monitoring ■ Rotatable body ■ Display rotatable by 180° ■ Excellent EMC properties ■ Pressure range -1 … 0 bar rel. Wiring diagram


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    pk01vr-p13-2up8x-v114130vdc2013-07-13t17d-45472 PDF

    w32 transistor

    Abstract: w41 transistor w33 transistor transistor p31 transistor k33 34 transistor w32 ic 4559 transistor 4559 455a transistor k33
    Contextual Info: APPLICATION NOTE 455A Group, 4559 Group Differences between 455A Group and 4559 Group 1. The Performance Overview Differences Parameter Number of basic instructions ROM type ROM size RAM size Input/Output ports D0 ~ D5 D6, D7 P00 ~ P03 P10 ~ P13 P20 ~ P23


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    m3455ag8fpm3455ag8-xxxfpm34559g6fpm34559g6-xxxfp+13m3455agcfpm3455agc-xxxfprec05b0047-0200/revw32 transistorw41 transistorw33 transistortransistor p31transistor k33 34transistor w32ic 4559transistor 4559455atransistor k33 PDF

    HPA-R11

    Abstract: HPA-D11 HPA-R13 HPA-P11 HPA-T11 HPA-E11 Yamatake hpA HPA-T13 HPA-A11 HPA-P13
    Contextual Info: SR. No. Yamatake Corporation SPECIFICATIONS THROUGH SCAN POLARIZED RETROREFLECTIVE SCAN SET EMITTER RECEIVER H P A -T 13 H PA-E13 HPA-R13 H PA -P13 HPA-T11 HPA-E11 HPA-R11 HPA-P11 POLARIZED RETROREFLECTIVE SCAN DIFFUSE SCAN DIFFUSE SCAN SELF-DIAGNOSIS/ FOR TRANSPARENT OBJECTS


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    hpa-t13hpa-e13hpa-r13hpa-p13+8hpa-t11hpa-e11hpa-r11hpa-p11hpa-f11hpa-d11yamatake hpahpa-a11 PDF

    p331

    Abstract: SGSP130
    Contextual Info: S G S-THOMSON 07E D | 7 ^ 2 3 7 0Dl7fl07 b | _ 73C 1 7 3 0 4 _ O j T Z J - O y _ _ ê f. V ñ K W% i I 1 • SGSP13Ò/P13Ì/P132 ;] SGSP230/P231/P232 .4 SGSP330/P331/P332 - 1 N-CHÀNNEL POWER MOS TRANSISTORS & HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate


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    0dl7fl07sgsp13/p132sgsp230/p231/p232+7sgsp330/p331/p332ot-82o-220sgsp130sgsp230sgsp330p331 PDF

    transistor p14

    Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
    Contextual Info: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.


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    lm294019-may-2005transistor p14p7 transistor+8transistor p1 p 12bs2-icjack p10p15 transistortransistor p13p4 transistortransistor p15transistor p8 PDF

    TRANSISTOR p50

    Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
    Contextual Info: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the


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    eshp170cobeshp170ap-esh-0005transistor p50+9p13 transistorp41 transistortransistor p13p40 transistorp21 transistortransistor p32 25p23 transistortransistor p31transistor p11 PDF

    transistor p13

    Abstract: LDTA114WLT1G marking P13 sot-23 p13 transistor
    Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA114WLT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


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    ldta114wlt1got-23transistor p13marking p13 sot-23+1p13 transistor PDF

    transistor p13

    Contextual Info: 200mA / 30V Low VCE sat Digital transistors (with built-in resistors) DTB743ZE / DTB743ZM Dimensions (Unit : mm) Applications Inverter, Interface, Driver DTB743ZE 0.7 1.6 0.55 0.3 0.8 (2) 1.6 (3) (1) 0.2 0.2 0.1Min. Feature 1) VCE(sat) is lower than conventional products.


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    200madtb743zedtb743zmr1120a+1transistor p13 PDF

    marking P20 SOT23

    Abstract: marking code p13 P08 transistor P17 MARKING MARKING P04
    Contextual Info: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 = R2


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    aec-q101j-std-020ddta123ecaddta143eca+10ddta114ecaddta124ecaddta144ecaddta115ecads30333marking p20 sot23marking code p13p08 transistorp17 markingmarking p04 PDF

    marking code A40 SOT23-5

    Contextual Info: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 = R2


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    aec-q101j-std-020ddta123ecaddta143eca+6ddta114ecaddta124ecaddta144ecaddta115ecads30333marking code a40 sot23-5 PDF

    DTB743ZE

    Abstract: DTB743ZM SC-75A
    Contextual Info: DTB743ZE / DTB743ZM Transistors -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB743ZE / DTB743ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB743ZE 0.7 1.6 0.55 0.3 zFeature 1) VCE(sat) is lower than conventional products.


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    dtb743zedtb743zm-200masc-75a PDF

    Contextual Info: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data •   Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 R2  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound


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    aec-q101j-std-020mil-std-202ds30333 PDF

    Contextual Info: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT


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    rf2132800mhz950mhzis-95a PDF

    PF816

    Contextual Info: RF2132 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment • 4.8V JCDMA/TACS Handsets Product Description The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT


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    rf2132800mhz950mhzis-95a+1pf816 PDF

    RF2119

    Abstract: PSSOP16 F2119
    Contextual Info: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc­ tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held


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    f2119915mhzrf2119800mhz+2960mhzpssop16 PDF

    M74 marking

    Abstract: MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109
    Contextual Info: Philips Semiconductors Small-signal fteld-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER TYPE NUMBER MARKING CODE


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    ot143ot343bf510bf511+16bf512bf513bf545abf545bbf545cbf556am74 markingmarking m3pmarking code nb sot23m2p sot23m33 sot23marking code m33marking code philipsbsr58marking m33bf1109 PDF

    BSS83 M74

    Abstract: bf992 m92 bf998 Mop marking M29 M74 marking BF511 BF909RM29 marking nb transistor M3P BFT46
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes Small-signal field-effect transistors 1997 Dec 05 Supersedes data of 1995 Apr 12 File under Discrete Semiconductors, SC07 Philips Semiconductors Small-signal field-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table.


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    ot143ot343bf510bf991+15pmbf4391bf511bf992pmbf4392bf512bf992rbss83 m74bf992 m92bf998 mopmarking m29m74 markingbf909rm29marking nbtransistor m3pbft46 PDF

    sot23 marking M6p

    Abstract: PMBFJ111 PMBFJ174
    Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER


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    ot143ot343bf510bf994s+9bst120bf511bf996sbst122bf512bf997sot23 marking m6ppmbfj111pmbfj174 PDF

    cmos 4553

    Abstract: ic 4553 4559 transistor p13 pin of ic 4553 4559Group w41 transistor 4553 transistor p31 P32 transistor
    Contextual Info: APPLICATION NOTE 4553 Group, 4559 Group Differences between 4553 Group and 4559 Group 1. The Performance Overview Differences Function Parameter Number of basic instructions ROM type ROM size RAM size Input/output ports D0 ~ D5 D6, D7 P00 ~ P03 LCD control circuit


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    4553h4553grouprec05b0046-0100/revcmos 4553+9ic 45534559transistor p13pin of ic 45534559groupw41 transistor4553transistor p31p32 transistor PDF

    DTC115EKA

    Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors • Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thinfilm resistors with complete isolation to allow


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    dtc115eka100mhz PDF

    Contextual Info: Digital transistors built-in resistors • Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thinfilm resistors with complete isolation to allow


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    dtc115eka100mhz PDF

    Contextual Info: Ordering number : ENA2158 LC88F42A0PA/A0PAU CMOS LSI 16-bit ETR Microcontroller for Car Audio Systems http://onsemi.com ALL FLASH Overview The LC88F42A0PA/A0PAU is 16-bit microcontroller which is ideally suited as a sub controller in car audio applications for the control of “Power” “Operating mode.” They are configured around a CPU that operates at a high


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    ena2158lc88f42a0pa/a0pau16-bita2158-23/23 PDF

    Contextual Info: Ordering number : ENA2158 CMOS LSI LC88F42A0PA/A0PAU For Car Audio Systems 16-bit ETR Microcontroller ALL FLASH Overview The LC88F42A0PA/A0PAU is 16-bit microcontroller which is ideally suited as a sub controller in car audio applications for the control of “Power” “Operating mode.” They are configured around a CPU that operates at a high


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    ena2158lc88f42a0pa/a0pau16-bita2158-23/23 PDF