P11N60 Search Results
P11N60 Price and Stock
onsemi FCP11N60Power MOSFET N-Channel SUPERFET® Easy Drive 600 V 11 A 380 mΩ TO-220 |
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FCP11N60 |
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FCP11N60 | Tube | 59 Weeks | 1,000 |
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FCP11N60 | 659 |
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FCP11N60 | Bulk | 150 |
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FCP11N60 | 172 | 1 |
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FCP11N60 | 62 | 1 |
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FCP11N60 | 1,000 |
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FCP11N60 | 350 | 53 Weeks | 50 |
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FCP11N60 | 550 | 53 Weeks | 50 |
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Infineon Technologies AG SPP11N60C3XKSA1- Rail/Tube (Alt: SPP11N60C3XKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPP11N60C3XKSA1 | Tube | 450 | 500 |
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SPP11N60C3XKSA1 | Bulk | 228 | 1 |
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SPP11N60C3XKSA1 | 240 | 1 |
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SPP11N60C3XKSA1 | 1 |
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SPP11N60C3XKSA1 | 7,500 |
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SPP11N60C3XKSA1 | 51 Weeks | 500 |
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SPP11N60C3XKSA1 | 7,672 |
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onsemi FCP11N60NPower MOSFET, N-Channel, SUPREMOS?, FAST, 600 V, 10.8 A, 299 mO, TO-220 - Rail/Tube (Alt: FCP11N60N) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCP11N60N | Tube | 800 |
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FCP11N60N | 226 | 1 |
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FCP11N60N | 790 |
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STMicroelectronics STP11N60DM2- Bulk (Alt: STP11N60DM2) |
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STP11N60DM2 | Bulk | 1,000 |
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STP11N60DM2 | 9 | 1 |
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STP11N60DM2 | 3,750 |
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STP11N60DM2 | 1,500 | 143 Weeks | 2,000 |
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STP11N60DM2 | 25 Weeks | 50 |
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Infineon Technologies AG SPP11N60CFDXKSA1Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP11N60CFDXKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPP11N60CFDXKSA1 | Tube | 500 |
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SPP11N60CFDXKSA1 | 500 |
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SPP11N60CFDXKSA1 | 9 Weeks | 500 |
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SPP11N60CFDXKSA1 | 3,927 |
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P11N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA O rder this docum ent by M G P11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C |
OCR Scan |
p11n60ed/dn60ed | |
STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
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Original |
stvdst-01cat22stk411-230estk411-220e+8 | |
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Contextual Info: MOTOROLA Order this document by P11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high |
OCR Scan |
mgp11n60e/dgp11n621a-06o-220ab |