P10N1 Search Results
P10N1 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| P10N15A |
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Electromechanical Filter 10.7 MHz BPF, 1.5 dB IL, 0.5 dB Inband ripple | Original | 30.02KB | 2 | ||
| P10N15B |
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Electromechanical Filter 10.7 MHz BPF, 2 dB IL, 1 dB Inband ripple | Original | 30.02KB | 2 | ||
AKP10N12K
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AK Semiconductor | N-Channel Super Trench II Power MOSFET AKP10N12K with 120V VDS, 65A ID, 8.7mΩ RDS(on) at VGS=10V, low gate charge, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
AKP10N12
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AK Semiconductor | N-Channel Super Trench II Power MOSFET AKP10N12 with 120V VDS, 70A ID, 8.5mΩ RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
AKP10N12D
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AK Semiconductor | N-Channel Super Trench II Power MOSFET AKP10N12 D with 120V drain-source voltage, 70A continuous drain current, 8.5mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | Original |
P10N1 Price and Stock
Rochester Electronics LLC RFP10N12LN-CHANNEL POWER MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RFP10N12L | Bulk | 54,904 | 176 |
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Rochester Electronics LLC RFP10N15LN-CHANNEL POWER MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RFP10N15L | Bulk | 34,089 | 233 |
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FLIP ELECTRONICS HGTP10N120BNIGBT NPT 1200V 35A TO-220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HGTP10N120BN | Tube | 800 | 800 |
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STMicroelectronics STP10N105K5MOSFET N-CH 1050V 6A TO220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STP10N105K5 | Tube | 535 | 1 |
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STP10N105K5 | 269 |
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| STP10N105K5 | 269 |
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STP10N105K5 | 269 | 1 |
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STP10N105K5 | 1 |
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Get Quote | |||||||
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STP10N105K5 | 19 Weeks | 50 |
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STP10N105K5 | 19 Weeks | 50 |
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Infineon Technologies AG SPP10N10MOSFET N-CH 100V 10.3A TO220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPP10N10 | Tube | 500 |
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SPP10N10 | 10 | 1 |
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SPP10N10 | 9,739 |
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P10N1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
"Crystal Filter"
Abstract: A3X2
|
Original |
P10M8A P10M8B P10M8D P10M8E P10M30D P10N15A com/10MHZ P10N15B 19013-36th "Crystal Filter" A3X2 | |
p channel de mosfetContextual Info: Basic; TMOS Characteristics Avalanche Energy T h e E -F E T series of po w e r M O SFETs are ruggedized de vice s that can w ith sta n d the stresses of d ra in -to -source ove rvolta ge transients. T hese d e vice s carry w ith them an en erg y rating. T heir energy handling ca p a b ility is c h a ra cte r |
OCR Scan |
P10N1 O-220 O-218 T0-204 O-247 p channel de mosfet |