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    P10N1 Search Results

    P10N1 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    P10N15A
    		Pletronics Electromechanical Filter 10.7 MHz BPF, 1.5 dB IL, 0.5 dB Inband ripple Original PDF 30.02KB 2
    P10N15B
    		Pletronics Electromechanical Filter 10.7 MHz BPF, 2 dB IL, 1 dB Inband ripple Original PDF 30.02KB 2
    SF Impression Pixel

    P10N1 Price and Stock

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    STMicroelectronics STP10N105K5

    MOSFET N-CH 1050V 6A TO220
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    DigiKey STP10N105K5 Tube 697 1
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    Avnet Americas STP10N105K5 Tube 14 Weeks 1,000
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    Mouser Electronics STP10N105K5 831
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    STMicroelectronics STP10N105K5 831 1
    • 1 $3.70
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    TME STP10N105K5 1
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    Avnet Silica STP10N105K5 15 Weeks 50
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    Chip One Stop STP10N105K5 Tube 895 0 Weeks, 1 Days 1
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    EBV Elektronik STP10N105K5 16 Weeks 50
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    IBS Electronics STP10N105K5 2,000 50
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    Infineon Technologies AG SPP10N10

    MOSFET N-CH 100V 10.3A TO220-3
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    DigiKey SPP10N10 Tube 500
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    Rochester Electronics SPP10N10 10 1
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    Vyrian SPP10N10 2,185
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    Infineon Technologies AG SPP10N10L

    MOSFET N-CH 100V 10.3A TO220-3
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    onsemi MTP10N10ELG

    MOSFET N-CH 100V 10A TO220AB
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    Vyrian MTP10N10ELG 1,286
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    onsemi HGTP10N120BN

    IGBT NPT 1200V 35A TO-220-3
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    Flip Electronics HGTP10N120BN 800
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    Find more P10N1 price and stock on Findchips.com

    P10N1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    "Crystal Filter"

    Abstract: A3X2
    Contextual Info: PLETRONICS 10.7 MHz MONOLITHIC CRYSTAL FILTER SERIES PLETRONICS 10.7 MHz MONOLITHIC CRYSTAL FILTER SERIES Package Outlines Part# Click to Order Channel Spacing Passband # of poles Stopband dB kHz dB kHz dB kHz Ripple Loss Terminating Impedance dB dB Ω //pF//pF


    Original     		P10M8A P10M8B P10M8D P10M8E P10M30D P10N15A com/10MHZ P10N15B 19013-36th "Crystal Filter" A3X2 PDF

    p channel de mosfet

    Contextual Info: Basic; TMOS Characteristics Avalanche Energy T h e E -F E T series of po w e r M O SFETs are ruggedized de vice s that can w ith sta n d the stresses of d ra in -to -source ove rvolta ge transients. T hese d e vice s carry w ith them an en erg y rating. T heir energy handling ca p a b ility is c h a ra cte r­


    OCR Scan     		P10N1 O-220 O-218 T0-204 O-247 p channel de mosfet PDF