P103 Search Results

rvdt sensor

Abstract: LVDT
Contextual Info: LIPS P103 SHORT STROKE LINEAR POSITION SENSOR Position feedback for industrial and scientific applications • • • • • • Non-contacting inductive technology to eliminate wear Travel set to customer’s requirement Short body length High durability and reliability

tanaka TS3332LD

Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
Contextual Info: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

XP1039-QJ

Abstract: P1039-QJ 6x6mm qfn 52 6x6
Contextual Info: 5.6-7.1 GHz Linear 4W Power Amplifier 6x6mm QFN P1039-QJ October 2009 - Rev 08-Oct-09 Features 16.5 dB Small Signal Gain 49 dBm Third Order Intercept Point OIP3 4W Saturated RF Power Integrated Power Detector 6x6mm QFN Package, RoHS Compliant 100% RF Testing

R6310

Contextual Info: HEWLETT-PACKARD/ CMPNTS 34E D 44475Ô 4 QQ07471 5 H HP A Whn% H E W LE T T %l !H m P A C K A R D 7-Y/-35 2.3 Inch AlGaAs R ed 5 x 8 D ot M atrix A lphanum eric D isp lays Technical D ata HDSP-P101/HDSP-P151 HDSP-P103/HDSP-P153 Features • V ery L a rg e C h a ra c te r

Contextual Info: STM-P103 development board user's manual Rev.B, September 2013 Copyright c 2013, OLIMEX Ltd, Some rights reserved INTRODUCTION: STM32-P103 board is development board which allow exploring the complete features of the new ARM Cortex M3 STM32F103RBT6 microcontrollers produced by ST

AP1098

Abstract: AP1037 AP1083 2N6228 2N6229 2N6230 2N6231 AP1015 AP1016 AP1023
Contextual Info: A P I ELECTRONI CS "Sb INC dF J o DMBS^S 0000532 2 |~~ 26C 0043592 D e v ic e N o 2N 622 8 2N 6229 2N 6230 2N 6231 A P1015 A P1016 A P I 022 A P1023 A P1033 A P1034 A P1037 A P1038 A P1052 A P1053 A P1054 A P I 064 A P1065 A P1073 A P1074 A P1075 A P1076 A P1083

P1031-QK

Abstract: XB1014-QT XP1031-QK XP1031-QK-EV1 XU1006-QB pin diodes 10 GHz
Contextual Info: 37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm P1031-QK August 2009 - Rev 26-Aug-09 Features Linear Power Amplifier Output Power Adjust 25.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point +35.5 dBm OIP3 General Description Mimix Broadband’s four stage 37.0-40.0 GHz SMD

XP1035-BD

Abstract: P1035-BD
Contextual Info: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The P1035-BD is a linear power amplifier that

Contextual Info: 37.0-42.0 GHz GaAs Power Amplifier QFN, 7x7mm P1031-QK March 2009 - Rev 21-Mar-09 Features Linear Power Amplifier Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point +35.0 dBm OIP3 General Description Mimix Broadband’s four stage 37.0-42.0 GHz SMD

Contextual Info: Coaxial Low Noise Amplifier 50Ω ZX60-P103LN+ 50 to 3000 MHz The Big Deal • Ultra Low Noise Figure, 0.5 dB typ. • High Dynamic Range Case Style: GC957 Product Overview The ZX60-P103LN+ RoHS compliant uses Mini-Circuits' E-PHEMT technology to offer ultra low noise figure over a

Contextual Info: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The P1035-BD is a linear power amplifier that

XP1039-QJ

Abstract: 6x6mm
Contextual Info: 5.6-7.1 GHz Linear 4W Power Amplifier 6x6mm QFN P1039-QJ January 2011 - Rev 06-Jan-11 Features 16.5 dB Small Signal Gain 49 dBm Third Order Intercept Point OIP3 4W Saturated RF Power Integrated Power Detector 6x6mm QFN Package, RoHS Compliant 100% RF Testing

XP1032-BD

Abstract: XP1032-BD-EV1 DM6030HK
Contextual Info: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD January 2010 - Rev 29-Jan-10 Features Chip Device Layout 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

P124 rectifier

Abstract: P431K diode P412
Contextual Info: INTERNATIONAL RECTIFIER EbE D International US Rectifier - Passivated Assembled Circuit Elements <0 6 (7) (8) P1Q1K P102K P103K P104K P105K P111K P112K P113K P114K P115K P121K P122K P123K P124K P125K P131K P132K P133K P134K P135K P141K P142K P143K P144K

inductive displacement sensors

Contextual Info: LIPS P103 SHORT STROKE LINEAR POSITION SENSOR Position feedback for industrial and scientific applications • • • • • • Non-contacting inductive technology to eliminate wear Travel set to customer’s requirement Short body length High durability and reliability

Contextual Info: Coaxial Low Noise Amplifier 50Ω ZX60-P103LN+ 50 to 3000 MHz The Big Deal •฀ Ultra฀Low฀Noise฀Figure,฀0.5฀dB฀typ. •฀ High฀Dynamic฀Range Case Style: GC957 Product Overview The ZX60-P103LN+ RoHS compliant uses Mini-Circuits' E-PHEMT technology to offer ultra low noise figure over a

38TX0768-QB

Abstract: P1031-QK XP1031-QK XP1031-QK-0L00 XP1031-QK-EV1
Contextual Info: 37.0-42.0 GHz GaAs Power Amplifier QFN, 7x7mm P1031-QK September 2007 - Rev 25-Sep-07 Features Linear Power Amplifier Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point +35.0 dBm OIP3 General Description Mimix Broadband’s four stage 37.0-42.0 GHz SMD

P1034-BD

Abstract: 40dbm
Contextual Info: 12.5-16.5 GHz GaAs MMIC Power Amplifier P1034-BD December 2007 - Rev 04-Dec-07 Features 1 Watt Saturated RF Power 17 dB Gain 40 dBm Output IP3 Linearity On-Chip Power Detector 100% On-Wafer RF Testing General Description The P1034-BD a is linear power amplifier that

Contextual Info: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD March 2009 - Rev 04-Mar-09 Features Chip Device Layout 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

Contextual Info: Coaxial Low Noise Amplifier 50Ω ZX60-P103LN+ 50 to 3000 MHz The Big Deal • Ultra Low Noise Figure, 0.5 dB typ. • High Dynamic Range Case Style: GC957 Product Overview The ZX60-P103LN+ RoHS compliant uses Mini-Circuits' E-PHEMT technology to offer ultra low noise figure over a

Contextual Info: Coaxial Low Noise Amplifier 50Ω ZX60-P103LN+ 50 to 3000 MHz The Big Deal • Ultra Low Noise Figure, 0.5 dB typ. • High Dynamic Range Case Style: GC957 Product Overview The ZX60-P103LN+ RoHS compliant uses Mini-Circuits' E-PHEMT technology to offer ultra low noise figure over a

Contextual Info: Coaxial Low Noise Amplifier 50Ω ZX60-P103LN+ 50 to 3000 MHz The Big Deal • Ultra Low Noise Figure, 0.5 dB typ. • High Dynamic Range Case Style: GC957 Product Overview The ZX60-P103LN+ RoHS compliant uses Mini-Circuits' E-PHEMT technology to offer ultra low noise figure over a

Contextual Info: F G H I J M4x0.7 WAS M2.5x0.5, BEARING BOBBIN END MODIFIED RAN 136 PDM G BULL NOSE COND'N NOTE MODIFIED PDM H OPTIONS MODIFIED PDM I START OF TRAVEL ADDED OPTION N RDS J FLANGE TH'KNESS ADDED. PDM F 10/04/06 23/05/06 16/10/06 7/10/09 05/01/10 RDS P103 LIPS SHORT STROKE

XP1033-QT-EV1

Contextual Info: 13.0-16.5 GHz Power Amplifier QFN, 3x3mm P1033-QT November 2007 - Rev 13-Nov-07 Features 15 dB Small Signal Gain 25 dBm P1dB Compression Point 35 dBm Output IP3 Linearity 3x3mm Standard QFN Package 100% RF, DC and Testing General Description The P1033-QT is a packaged driver amplifier that