P02 SOT Search Results
P02 SOT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MKZ30V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 30 V, SOT-23 | Datasheet | ||
| MSZ36V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 36 V, SOT-346 | Datasheet | ||
| MKZ24V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 24 V, SOT-23 | Datasheet | ||
| MSZ30V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 30 V, SOT-346 | Datasheet | ||
| MKZ36V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 36 V, SOT-23 | Datasheet |
P02 SOT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
J202 equivalentContextual Info: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ201 FM M J202 FM M J203 FM M J204 - P01 P02 PO3 P 04 ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5°C -40V Gate Drain or Gate-Source Voltage Notes Continous Forward Gate Current |
OCR Scan |
fmmj201j202 equivalent | |
PPG20
Abstract: P13 SOT TO10 MB95F334H LQFP32 REF200 TO00
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p17/to1/sni0p16/ui0/ppg21p15/uo0/ppg20p14/uck0/ppg01+13 | |
QFN32
Abstract: 25P12 DCQFN32
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p07/int07p12/ec0/degp06/int06/to01p05/int05/an05/to00/hclk2+6 | |
MB95F334
Abstract: PPG20 TO10 transistor p61 MB95F334H QFN32 SN-1 TO00
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p17/to1/sni0p16/ui0/ppg21p15/uo0/ppg20p14/uck0/ppg01+14 | |
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Contextual Info: revision-P02. ' 98.07.14 MITSUBISHI LSIs M5M5V416BTP,RT F & C M L m U & r iY Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416B is a family of low voltage 4-Mbit static RAMs |
OCR Scan |
revision-p02m5m5v416btp4194304-bit262144-word+3 | |
0.1u 50v
Abstract: PC521 PC508 P0631 PC529 1-JP12
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pj501jack20jp507pt501+12 | |
con16
Abstract: PIN51 max3232acse j6 con4 100NF 1N4001 PCA82C250 TLE4264 Pin-51 MB91F267
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100nfpin64pin63pin62+15 | |
RC39F
Abstract: MB91F469GB b20 p03 JP41 SW1S r40a Y20 100N MAX3232CSE T RC41E 512Kx32x4
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p00/d24-31p01/d16-23p02/d8-154mbx16+14 | |
TO00Contextual Info: 25 [℃] Ta: •Latch-up Applied voltage[V] P12/EC0/DEG P07/INT07 20 ■Latch-up Applied current[mA] P06/INT06/TO01 P05/INT05/AN05/TO00/HCLK2 20 P04/INT04/AN04/SIN/HCLK1/EC0 P03/INT03/AN03/SOT P12/EC0/DEG P07/INT07 P06/INT06/TO01 P05/INT05/AN05/TO00/HCLK2 |
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p12/ec0/degp07/int07p06/int06/to01p05/int05/an05/to00/hclk2+3 | |
MB95F354L
Abstract: MB95F354 TO10 TO00
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p12/ec0/degp07/int07p06/int06/to01p05/int05/an05/to00/hclk2+6 | |
TO10
Abstract: TSSOP24 TO00 MB95F354L
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p12/ec0/degp07/int07p06/int06/to01p05/int05/an05/to00/hclk2+6 | |
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Contextual Info: Product specification NTR1P02L, NVTR01P02L Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package V BR DSS RDS(on) Max ID Max −20 V 220 mW @ −4.5 V −1.3 A P−Channel D These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal |
Original |
ntr1p02lnvtr01p02l | |
transistor p14
Abstract: P11 MARKING CODE DDTA143FE DDTA114WE
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ot-523j-std-020amil-std-202ds30318+4 | |
transistor marking p02
Abstract: P02 SOT DDTA114WE
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ot-523j-std-020amil-std-202ds30318+3 | |
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DDTA114WE
Abstract: transistor marking p02 DDTA113ZE DDTA114YE DDTA123JE DDTA123YE DDTA143FE DDTA143XE DDTA143ZE J-STD-020A
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ot-523j-std-020amil-std-202ddta113ze+8 | |
DDTA114WEContextual Info: SPICE MODELS: DDTA113ZE DDTA123YE DDTA123JE DDTA143XE DDTA143FE DDTA143ZE DDTA114YE DDTA114WE DDTA124XE DDTA144VE DDTA144WE DDTA R1¹R2 SERIES E Lead-free PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction |
Original |
ddta113zeddta123yeddta123jeddta143xe+6 | |
SCHEMATIC 10kw inverter
Abstract: DDTA114WE transistor marking p02 DDTA113ZE DDTA114YE DDTA123JE DDTA123YE DDTA124XE INVERTER 10kW diagram DDTA143XE
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ddta113zeddta123yeddta123jeddta143xe+9 | |
DDTA114WEContextual Info: SPICE MODELS: DDTA113ZE DDTA123YE DDTA123JE DDTA143XE DDTA143FE DDTA143ZE DDTA114YE DDTA114WE DDTA124XE DDTA144VE DDTA144WE DDTA R1¹R2 SERIES E PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction |
Original |
ddta113zeddta123yeddta123jeddta143xe+6 | |
transistor marking p02
Abstract: Marking P15 pnp DDTA114WE 24 SOT523 DDTA113ZE DDTA114YE DDTA123JE DDTA123YE DDTA124XE DDTA143FE
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ddta113zeddta123yeddta123jeddta143xe+9 | |
R19A
Abstract: MAX202CSE R16A r17a R16B R17B R18B p21 transistor P32 23 p04 sot223
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z86e136so-16rs23296c0691-001+10 | |
NVTR1P02LT1
Abstract: NVTR1P02LT1G
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ntr1p02lt1nvtr1p02lt1ot-23ntr1p02lt1/d+1 | |
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Contextual Info: NTR1P02LT1, NTR1P02LT1H Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package http://onsemi.com These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical |
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ntr1p02lt1ntr1p02lt1hot-23ntr1p02lt1/d | |
NTR1P02LT1G
Abstract: NTR1P02LT1 NTR1P02LT3 NTR1P02LT3G
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ntr1p02lt1ot-23ntr1p02lt1/dntr1p02lt1g+2 | |
MAX3232CSE
Abstract: LM317T 16D-9 P10 led 1N4004 LM317 Basso TLE6259-2G P05-P07 for lm317
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int11int10max3232cse1n4148+12 | |