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Lite-On Semiconductor Corporation LTPL-P011R LED LTPL RED 1 WATT SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LTPL-P011R	Reel			500	1 - 10 - 100 - 1000 $1.78 10000 $1.67	Buy Now
Vishay Sfernice RLP011R000FA20 SFERNICE FIXED RESISTORS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RLP011R000FA20	Ammo Pack			500	1 - 10 - 100 - 1000 $4.66 10000 $4.66	Buy Now
Vishay Sfernice RLP011R000JS00 SFERNICE FIXED RESISTORS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RLP011R000JS00	Bag			10	1 - 10 $10.12 100 $10.12 1000 $10.12 10000 $10.12	Buy Now
Vishay Sfernice RLP011R000JR15 SFERNICE FIXED RESISTORS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RLP011R000JR15	Reel			1,000	1 - 10 - 100 - 1000 $3.88 10000 $3.88	Buy Now
Vishay Sfernice RLP011R500JA20 SFERNICE FIXED RESISTORS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RLP011R500JA20	Ammo Pack			500	1 - 10 - 100 - 1000 $3.88 10000 $3.88	Buy Now

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P011R Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
STU16NC50 Contextual Info: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED	Original	STU16NC50 Max220 STU16NC50	PDF
STU6NA100 Contextual Info: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED	Original	STU6NA100 Max220 100oC STU6NA100	PDF
STU6NA90 Contextual Info: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU6NA90 900 V <2Ω 5.8 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE	Original	STU6NA90 Max220 O-220, O-220 STU6NA90	PDF
STU11NB60 Contextual Info: STU11NB60 N-CHANNEL 600V - 0.5Ω - 11A Max220 PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STU11NB60 600V < 0.6Ω 11 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED	Original	STU11NB60 Max220 STU11NB60	PDF
STU10NB80 Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	Original	STU10NB80 Max220 STU10NB80	PDF
STU7NA90 Abstract: sd 50 diode Contextual Info: STU7NA90 N - CHANNEL 900V - 1.05 Ω - 7A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU7NA90 900 V < 1.3 Ω 7A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED	Original	STU7NA90 Max220 100oC STU7NA90 sd 50 diode	PDF
0413A Abstract: STU13NC50 Contextual Info: STU13NC50 N-CHANNEL 500V - 0.31Ω - 13A Max220 PowerMesh II MOSFET TYPE STU13NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.4 Ω 13 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED	Original	STU13NC50 Max220 0413A STU13NC50	PDF
STU16NC50 Contextual Info: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED	Original	STU16NC50 Max220 STU16NC50	PDF
Contextual Info: STU7NB100 N - CHANNEL 1000V - 1.2 ft - 7.3A - Max220 _ PowerMESH MOSFET PRELIM IN ARY DATA TYPE S T U 7N B 1 00 . . . . . . . V dss RDS on Id 1000 v < 1.5 a 7.3 A TYPICAL RDS(on) = 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	STU7NB100 Max220 Max220 P011R	PDF
u16nb50 Abstract: STU16NB50 Contextual Info: STU16NB50 N-CHANNEL 600V - 0.45Ω - 10.7A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE ST U16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	Original	STU16NB50 Max220 U16NB50 u16nb50 STU16NB50	PDF
Max220 Abstract: STU7NB90 STU7NB90I Contextual Info: STU7NB90 STU7NB90I N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I PowerMesh MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STU7NB90 900 V < 1.45 Ω 7.3 A STU7NB90I 900 V < 1.45 Ω 7.3 A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED	Original	STU7NB90 STU7NB90I Max220/Max220I Max220 STU7NB90 STU7NB90I	PDF
Contextual Info: STU26NM50 STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET PRELIMINARY DATA TYPE STU26NM50 STU26NM50I n n n n n VDSS RDS on ID 500V 500V < 0.120Ω < 0.120Ω 26 A 26 A TYPICAL RDS(on) = 0.01Ω HIGH dv/dt AND AVALANCHE CAPABILITIES	Original	Max220/Max220I STU26NM50 STU26NM50I Max220	PDF
STU11NB60 Contextual Info: STU11NB60 N-CHANNEL 600V - 0.5Ω - 11A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU11NB60 • ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.6 Ω 11 A TYPICAL RDS(on) = 0.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	Original	STU11NB60 Max220 STU11NB60	PDF
china schematic diagram Abstract: STU7NB90 Contextual Info: STU7NB90  N - CHANNEL 900V - 1.2Ω - 7.3A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU7NB90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.45 Ω 7.4 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING	Original	STU7NB90 Max220 china schematic diagram STU7NB90	PDF

U8NA80 Abstract: STU8NA80 8A320 Contextual Info: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U8NA80 • ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 1.0 Ω 8.3 A TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING	Original	STU8NA80 U8NA80 Max220TM Max220 O-220, U8NA80 STU8NA80 8A320	PDF
U14NA50 Abstract: STU14NA50 Contextual Info: STU14NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U14NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.36 Ω 14 A TYPICAL RDS(on) = 0.31 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING	Original	STU14NA50 U14NA50 Max220TM Max220 U14NA50 STU14NA50	PDF
STU16NB50 Contextual Info: STU16NB50 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STU16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	Original	STU16NB50 STU16NB50	PDF
STU16NB50 Contextual Info: STU16NB50 N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET TYPE STU16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	Original	STU16NB50 A-Max220 STU16NB50	PDF
STU13NC50 Contextual Info: STU13NC50 N-CHANNEL 500V - 0.31Ω - 13A Max220 PowerMesh II MOSFET TYPE STU13NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.4 Ω 13 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED	Original	STU13NC50 Max220 STU13NC50	PDF
STU9NA60 Abstract: sd 50 diode Contextual Info: STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU9NA60 600 V < 0.8 Ω 9A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING	Original	STU9NA60 Max220 O-220, O-220 STU9NA60 sd 50 diode	PDF
STU9NB80 Contextual Info: STU9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET TYPE V DSS R DS on ID STU9NB80 800 V <1Ω 9A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED	Original	STU9NB80 O-247 STU9NB80	PDF
DD 128 D transistor Abstract: STU8NA80 8a320 Contextual Info: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU8NA80 800 V < 1.0 Ω 8.3 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING	Original	STU8NA80 Max220TM Max220 O-220, O-220 DD 128 D transistor STU8NA80 8a320	PDF
STU10NC70Z Abstract: STU10NC70ZI Contextual Info: STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH III MOSFET TYPE STU10NC70Z STU10NC70ZI • ■ ■ ■ ■ ■ VDSS RDS on ID 700 V 700 V <0.75Ω <0.75Ω 9.4 A 9.4 A TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv/dt CAPABILITY	Original	STU10NC70Z STU10NC70ZI Max220/I-Max220 I-Max220 Max220 STU10NC70Z STU10NC70ZI	PDF
u16nb50 Abstract: u16nb STU16NB50 Contextual Info: STU16NB50  N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET TYPE ST U16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	Original	STU16NB50 A-Max220 U16NB50 u16nb50 u16nb STU16NB50	PDF

P011R Search Results

P011R Price and Stock

Lite-On Semiconductor Corporation LTPL-P011R

Vishay Sfernice RLP011R000FA20

Vishay Sfernice RLP011R000JS00

Vishay Sfernice RLP011R000JR15

Vishay Sfernice RLP011R500JA20

P011R Datasheets Context Search

STU16NC50

STU6NA100

STU6NA90

STU11NB60

STU10NB80

STU7NA90

0413A

STU16NC50

u16nb50

Max220

STU11NB60

china schematic diagram

U8NA80

U14NA50

STU16NB50

STU16NB50

STU13NC50

STU9NA60

STU9NB80

DD 128 D transistor

STU10NC70Z

u16nb50