P0 SOT 363 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the

Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the

ahr 49 transistor

Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB

178 15T

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015TLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT– 23 L9015TLT1G 15T 3000/Tape&Reel L9015TLT3G

marking H2A sot-23

Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage

MSD601

Abstract: Marking yr sot-23 Marking c0 SC-75 sot-23 Marking yr EIA-481 SOT363 SOT-353 b1
Contextual Info: MSD601 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7.0 V Collector Current - Continuous IC 100 mA

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1

MSB709

Abstract: SC-75 SOT-353 b1
Contextual Info: MSB709 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -7.0 V Collector Current - Continuous IC -100

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diode LMBD7000LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Package LMBD7000LT1G Shipping SOT–23 3000/Tape & Reel LMBD7000LT3G SOT–23

Contextual Info: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon PNP Epitaxial Planer Transistor L4401DW1T1G z Pb-Free Package is Available. MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage Parameter VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB751V- 40T1G Features 1 Small surface mounting type SC-76/SOD-323 (2)Low reverse current and low forward voltage. (3)High reliability (4)Pb-Free package is available. Construction silicon epitaxial planar

LRB751S-40T1

Abstract: SC-75 SOD3232
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB751S-40T1 Features 1 Small surface mounting type SC-76/SOd323 (2)Low reverse current and low forward voltage. (3)High reliability Construction silicon epitaxial planar SC-79/SOD-523 Pb-Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8550HXLT1G FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE 3 • Pb-Free Package is available. 1 2 SOT– 23 TO–236AB MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR Peak Forward Current Peak Forward Surge Current

Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS226LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HXLT1G FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050XLT1G FEATURE 3 ƽHigh current capacity in compact package. IC = 0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking