P-N-P CURRENT MIRROR Search Results

917c

Contextual Info: SANYO SEMICONDUCTOR CORP 32E D • 7^^70713 0 D □ flñ'3D 7 Hi T -M -H 2029A P N P Epitaxial Planar S ilico n T ransistor Differential Amp Applications 917C Applications . Differential amp, current mirror. Features . Excellent in thermal equilibrium and suited

Contextual Info: / T L i n e A ß TECH NO LO GY í s í 50MHz, 800V/jis O p A m p F€fiTUR€S D C S C M P T IO n • 50MHz Gain-Bandwidth ■ 800V/ js Slew Rate ■ 5mA Maximum Supply Current The LT1360 is a high speed, very high slew rate opera­ tional amplifierwith excellent DC performance. The LT1360

Contextual Info: x y u n e r a a » 12MHz, 400V/|is O p Am p TECH N O LO G Y FCATURCS DCSCRIPTIOn • 12MHz Gain-Bandwidth ■ 400V/jas Slew Rate ■ 1.25mA Maximum Supply Current The LT1354 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC perfor­

Contextual Info: Ultra High Speed Hybrid Track-and-Hold Amplifiers A N A LO G D E V IC E S FEATURES Aperture Jitter of 5ps Acquisition Tim e 10ns O utput Current ± 4 0 m A S le w Rate 3 0 0 V / jjls A P P L IC A T IO N S Data Acquisition S y ste m s Radar Sy ste m s Instrum entation S y ste m s

Contextual Info: Or, Call Customer Service at W B-548-6132 USA Only B U W W -B R O W N (i Wide Bandwidth, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • BROADCAST/HDTV EQUIPMENT BANDWIDTH: 350MHz, 2.8Vp-p HIGH OUTPUT CURRENT: ±70mA

mosfet current mirror

Abstract: mosfet motor dc 48v MC34129 OM35N06M high voltage current mirror Active resistance
Contextual Info: OHNIREL CORP 43E D OM35NQ6M P O W E R S E N S E F E T IN H E R M E T IC IS O L A T E D J E D E C M O - Q 78 A A P A C K A G E • b? 8iQ 73 ooaos 2b a 3 ° i -13 14 Amp, 60 Volt, N-Channel Power MOSFET^T With Current Sensing Capability^ FEATURES • • •

Contextual Info: a m p l if ie r s PA88 • PA88A APEX M IC R O TEC H N O LO G Y CORPORATION • APPLICATIONS HOTLINE 800 546-APEX 800-546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V LOW QUIESCENT CURRENT — 2mA HIGH OUTPUT CURRENT — 100mA PROGRAMMABLE CURRENT LIMIT

PT 4962

Contextual Info: Ordering n u m b e r:EN4 6 5 2 FC151 No.4652 PNP Epitaxial P lanar Silicon Composite Transistor SAIIÊYO High-Frequency Amp,Current Mirror Circuit Applications I F eatu re s • Composite type with 2 transistors contained in the CP package currently in use, im proving the

Contextual Info: urn TECHNOLOGY LT1358/LT1359 D ual a n d Q u a d 25MHz, óOOV/^is O p Am ps Septem ber 1993 F€flTUft€S DCSCftlPTIOn • 25MHz Gain-Bandwidth ■ 600V/|iS Slew Rate ■ 2.5mA Maximum Supply Current per Amplifier The LT1358/LT1359 are dual and quad, low power, high

Contextual Info: iTunm _ LT1632/ LT1633 TECHNOLOGY 45MHz, 45V/|as, D u a l/Q u a d Rail-to-Rail In pu t a n d O u tp u t Precision O p A m ps FC R TU R C S DCSCRIPTIOn • Gain-Bandwidth Product: 45MHz ■ Slew Rate: 45V/|iS ■ Low Supply Current per Amplifier: 4.3mA

2sc3381

Contextual Info: 2SA1349 T O SH IB A TO SHIBA TRANSISTOR 2 S A 1 349 SILICON PNP EPITAXIAL TYPE M O N O LIT H IC D U A L TYPE Unit in mm LO W NOISE A U D IO AMPLIFIER APPLICATIONS R EC O M M END ED FOR CASCADE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, M A IN AMPLIFIERS

PL129N

Abstract: S29PL256N pl127 29PL256N S29PL127N S29PL-N Spansion NAND Flash DIE
Contextual Info: S29PL-N MirrorBit Flash Family 29PL256N, S29PL127N, S29PL129N, 256/128/128 Mb 16/8/8 M x 16-Bit CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory Data Sheet PRELIMINARY Notice to Readers: This document indicates states the current technical

TRANSISTOR BFW 11 pin diagram

Abstract: 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst

BCV62C

Contextual Info: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

S70FL01

Abstract: S70FL01GS
Contextual Info: S70FL01GS 1 Gbit 128 Mbyte MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O Data Sheet (Preliminary) S70FL01GS Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: S29GL-A MirrorBit Flash Family S29GL064A, S29GL032A, and S29GL016A 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology Data Sheet PRELIMINARY Notice to Readers: This document indicates states the current technical

110R

Abstract: 120R S70GL256M00
Contextual Info: PRELIMINARY S70GL256M00 256 Megabit 8 M x 32-Bit/16 M x 16-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O™ Control Distinctive Characteristics ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations

Class B power amplifier, 13.56MHz

Abstract: 13.56Mhz rf amplifier 13.56Mhz AMPLIFIER 13.56Mhz class C power amplifier UJ-850 "RF MOSFET" 300W 300w rf amplifier
Contextual Info: A d v a n c ed P o w er Tec h n o lo g y ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445. RF OPERATION 1-15MHz PO WE R MOS IV N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET pm_ The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific,

Contextual Info: S30MS-R ORNANDTM Flash Family S30MS04GR, S30MS02GR, S30MS01GR, S30MS512R 4 Gb/2 Gb/1 Gb/512 Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology Data Sheet S30MS-R ORNANDTM Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

STH51004G

Abstract: STH51004N STH51004Z STH51005G STH51005N STH51005Z
Contextual Info: Fiber Optics High Power 1300 nm FP Laser STH51004x STH51005x Features • • • • Designed for applications in fiber optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary Photodiode at rear mirror for monitoring

Contextual Info: Ordering number: EN 4587B Thick Film Hybrid 1C STK4241V AF Power Amplifier Split Power Supply (120W + 120W min, THD = 0.08%) Features Package Dimensions Muting circuit built-in to isolate all types of shock noise Current mirror circuit for low 0.08% total harmonic distortion

Contextual Info: S71NS-P Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode Multiplexed pSRAM 256 Mb 16 Mb x 16-bit and 128 Mb (8 Mb x 16-bit) Flash 64 Mb (4 Mb x 16-bit), and 32 Mb (2 Mb x 16-bit) pSRAM

c9ab

Abstract: S29NS-N marking w53 S72WS-N S75NS128NDE w933
Contextual Info: S75NS128NDE Based MCPs 1.8 Volt-only, Stacked Multi-Chip Product MCP x16 MirrorBit Flash Memory and DRAM 128 Mb Multiplexed, Simultaneous Read/Write, Burst Mode Code Flash Memory 256 Mb Multiplexed, Burst Mode Data Flash Memory 128 Mb SDR DRAM ADVANCE