P-I-N PHOTODETECTOR RISE TIME Search Results

Contextual Info: Advance Data Sheet January 1999 gr oup Lucent Technologies Bell Labs Innovations D171-Type FastLight PIN Photodetectors Features • Low-profile, 4-lead mini-DIL package — Suitable for SONET applications ■ High performance — High speed <0.5 ns typical rise and fall time

lucent photodetector

Abstract: IC 7495 pin configuration Internal diagram of ic 7495 pin photodetector
Contextual Info: m ic ro e le c tro n ic s group Advance Data Sheet December 1997 Lucent Technologies Bell Labs Innovations D171 -Type Mini-DIL PIN Photodetectors Features • Low-profile, 4-lead mini-DIL package — Suitable for SONET applications ■ High performance — High speed <0.5 ns typical rise and fall time

Contextual Info: SEMICONDUCTOR CORPORATION Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Features • Integrated Photodetector/Transimpedance Amplifier Family optimized for high speed optical communications applications

pin diagram of ic 741

Abstract: ic 741 equivalent 4021-N
Contextual Info: Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Features Block Diagram: • Integrated Photo detector/Trans impedance Amplifier Family optimized for high speed optical communications applications

EPITAXX ETX 75

Abstract: InGaAs Epitaxx PIN ETX 75 FJ M EPITAXX J254 100rst 100RF ingaas photodetector epitaxx ETX 75FJ/FC 75FJ/FC-XX FC/JDSU ETX
Contextual Info: EPITAXX INC SOE D 33bCm0b DQQGLbS □ W Ê E P X ETX 75FJ/FC-xx Series ETX 1OORxx Series EPITAXX H ig h Speed InGaAs Photodetector M odules Fibered and Connector Receptacle Packages Features • Low capacitance for high bandwidth ■ Low dark current for high sensitivity

G5214

Contextual Info: SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier VSC7810 Family for Optical Communication Features • Integrated Photodetector/Transimpedance Amplifier Optimized for High Speed Optical Communications Applications • High Bandwidth

4023N

Contextual Info: VITESSE VSC7B10 Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication Features • Integrated Photodetector/Transimpedance Amplifier Optimized for High Speed Optical „ r . £ * Communications Applications • Integrated AGC * High Bandwidth

lucent photodetector

Abstract: pin photodetector
Contextual Info: Advance Data Sheet December 1997 m icroe le ctron ics group Lucent Technologies Bell Labs Innovations A171-Type Mini-DIL Analog PIN Photodetector Features • Wavelength: 1.1 |im— 1.6nm ■ High performance — Very high linearity — High responsivity — High input saturation level

Contextual Info: AT&T MELEC {LTIdV/TELCOM} Û2D » • DDS0Ü57 OQOQOlfl 82D AT&T t 00018 ■ . D Lightwave Data Sheet 106A/E Pin Photodetectors FEATURES • 1.1 to 1.6 nm Wavelength • High Performance: High Speed, High Responsivity, Low Dark Current • Planar Structure For High Reliability

Contextual Info: SEMICONDUC TOR CORPORATION Preliminary Datasheet Photodetector/Transimpedance Amplifier VSC7802/7805 Family for Optical Communication Features • Integrated Photodetector/Transimpedance Amplifier Family Optimized for High Speed Optical Communications Applications

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATIN G FEATURES • Good optical to mechanical alignment SYMBOL IN C H ES MIN, A M ILLIM ETERS M AX MIN. N O TES

s347

Abstract: INGAAS MSM
Contextual Info: ULTRAFAST InGaAs MSM PHOTODETECTORS G7096 SERIES u PRELIMINARY DATA Ultrafast Response tr = 40ps, fc = 5GHz FEATURES • Ultrafast response • Suitable for OEICs APPLICATIONS • High speed computer datalinks • Optical communications • Optical high speed waveform measurement

R2h DIODE

Abstract: CCDs Charge Coupled Devices images of 74107 photo diode array amplifier OPA256C-1 A2LB
Contextual Info: O K I electronic components OPA256C-1 Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, 1-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a 2-phase clock pulse, transfer pulse, and reset

Contextual Info: E G R & ID G/CANADA/OPTOELEK C / Optics 1 D • 303Gblü □□OOG'ÌS ^50 M C A N A ^ InGaAs Photodiodes C30620 Series DATA SHEET Long Wavelength Photodiode For Detection of 1000 to 1700 NM Radiation Pream plifier Front End With or Without Integral Fiber Optic Pigtails

CCDs Charge Coupled Devices

Abstract: OPA2048CA uPD416
Contextual Info: E2POOM-I6-92 O K I electronic components OPA2Q48CA Self-Scanning Line Sensor GENERAL DESCRIPTION TheO PA 2048C A isa2,048-bit, one-dimensional diodearray comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a two-phase d o ck pulse, transfer pulse, and

EPITAXX ETX100RST

Abstract: ETX100RST ETX100RFC2 EPITAXX ETX 75 ETX100RFC-2 ingaas photodetector
Contextual Info: EPI E T X 1 0 O R F C /R S T S e rie s High Speed InGaAs Photodetector Modules Connector Receptacle Packages Features - High responsivity at 1300 nm • Bandw idth greater than 1 GHz ■ High Sensitivity ■ Rugged coaxial packages ■ Simple m ounting - ST receptacle for PC boards

MN3671

Contextual Info: Panasonic CCD Linear Image Sensor MN3671 RE Color CCD Linear Image Sensor with 1024 Pixels for R and B Colors/2048 Pixels for G Color • O ve rv iew iPin Assignments The MN3671 RE is a high responsivity CCD color linear image sensor with 1024 pixels each for R and B and 2048 G pixels,

LM161556

Abstract: SHARP LCD MATRIX lm16155 LM16155 sharp LM16155 Sharp lcd IIS FCN-724PO14-AU display sharp LS Sharp IIS
Contextual Info: PREPARED BY: DATE APPROVED BY: DATE SHARP LIQUID CRYSTAL D I SPLAY GROUP SHARP CORPORAT 10N ❑ ‘PEC’F’CAT”N - SPEC No. LC95502 FILE No. ISSUED May. 15.1995 15 Pages PAGE APPLICABLE DIVISION • DUTY PANEL DEVELOPMENT CENTER ❑ ITFT DEVELOPMENT CENTER

OSI photo detector

Abstract: 1N6266
Contextual Info: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940

HEDS-6000

Abstract: AN 1011 HEDS-5000 HEDS-5000
Contextual Info: W hoI H E W L E T T mLfiM PACKARD MOTION S E N S I N G APP LICATIO N S Incremental Encoder Errors: Causes and Methods to Reduce Them Application Brief M-109 Introduction The resolution is determined by Circuitry attached to the photode­ the codewheel used with the en­ tector turns the light/dark pattern

LDT-362

Contextual Info: LASER DIODE INC IE SBÖSTÖS 00DDM34 S I LAD LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 " T-4T-07 LASER DIODE IN C . 1300nm EDGE EMITTING LED SERIES FEATURES ►High Peak Power ►Fast Rise Time ►Single and Multi mode Fiber Optic Pigtail Options ► Hermetic and Non-Hermetic Packages

ETX100RST

Abstract: ETX100RFC-2 ETX100RFC-4 AT-1300 ingaas photodetector EPITAXX ETX 100 RFC 2 ETX100RFC2
Contextual Info: Epi E T X 10ORFC/RST Series H ig h Speed In G aA s P h o to d e te e to r M o d u le s Connector Receptacle Packages Features • High responsivity at 1300 nm ■ Bandwidth greater than 1 GHz ■ High Sensitivity ■ Rugged coaxial packages ■ Simple mounting

ST1009

Abstract: st1020 IN6266 L14G1 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 1N6266
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATING FEATURES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A MILLIMETERS MAX. MIN. .255 NOTES MAX.

R950

Abstract: 25CC ingaas photodetector
Contextual Info: ETX 1 0 0R F C 2 -P E TX 1 0 0 R F C 4 -P High Speed InGaAs Photodetector Modules FC Type,Receptacle Package A pplications • Fiber optic networks - Fiber irvthe-loop - Local area networks - Optical interconnects • Digital receivers to J .2 Gbps ■Test and measurement