P-CHANNEL POWERTRENCH MOSFET Search Results
P-CHANNEL POWERTRENCH MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
| TK5R1A08QM |
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MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS | Datasheet | ||
| TK155E65Z |
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N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ | Datasheet | ||
| TK090U65Z |
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MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL | Datasheet | ||
| TK5R3E08QM |
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MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB | Datasheet |
P-CHANNEL POWERTRENCH MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. |
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FDW2508P | |
S237
Abstract: 4925 B equivalent ic F63TNR F852 Si4925DY SOIC-16 SOIC-8 mosfet
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Si4925DY OT-23 S237 4925 B equivalent ic F63TNR F852 SOIC-16 SOIC-8 mosfet | |
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Contextual Info: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. |
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FDW2508P | |
2508P
Abstract: FDW2508P
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FDW2508P 2508P FDW2508P | |
Si4925DY
Abstract: S237 4925 B SOIC-16
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Si4925DY OT-23 S237 4925 B SOIC-16 | |
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Contextual Info: FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified M O SFETsare produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize the |
OCR Scan |
FDS9933A | |
FDC658AP
Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A
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FDC658AP FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A | |
FDC6432SHContextual Info: FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET General Description Features This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous |
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FDC6432SH FDC6432SH | |
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Contextual Info: Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V. |
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Si3441DV | |
FDS6679AZContextual Info: FDS6679AZ P-Channel PowerTrench MOSFET tm -30V, -13A, 9mΩ General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. |
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FDS6679AZ FDS6679AZ | |
9435 fairchild
Abstract: 9435 mosfet mosfet 9435 Si9435DY 9435 so8
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Si9435DY 9435 fairchild 9435 mosfet mosfet 9435 9435 so8 | |
CBVK741B019
Abstract: F011 F63TNR F852 FDS6609A FDS9953A L86Z
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FDS6609A CBVK741B019 F011 F63TNR F852 FDS6609A FDS9953A L86Z | |
Si3441DVContextual Info: Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V. |
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Si3441DV | |
CBVK741B019
Abstract: F63TNR FDC604P FDC633N
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FDC604P CBVK741B019 F63TNR FDC604P FDC633N | |
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Contextual Info: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V. |
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FDC604P | |
FDS6675BZContextual Info: FDS6675BZ P-Channel PowerTrench MOSFET -30V, -11A, 13mΩ General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. |
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FDS6675BZ FDS6675BZ | |
FDS6679AZContextual Info: FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. |
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FDS6679AZ FDS6679AZ | |
c3854
Abstract: FDR8702H
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FDR8702H c3854 FDR8702H | |
Si3445DVContextual Info: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V. |
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Si3445DV | |
FDS*6609A
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
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FDS6609A FDS*6609A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z | |
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Contextual Info: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V. |
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Si3445DV | |
marking 606
Abstract: diode marking EY
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FDC606P FDC606P NF073 marking 606 diode marking EY | |
8 pin ic 9435
Abstract: 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435
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Si9435DY 8 pin ic 9435 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435 | |
marking 564
Abstract: FDC5614P
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FDC5614P FDC5614P NF073 marking 564 | |