P-CHANNEL POWER MOSFET 14A Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9530 Preliminary POWER MOSFET -14A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF9530 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

ESD 141

Abstract: ON10M
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P06 Power MOSFET -50A, -60V P-CHANNEL D-S POWER MOSFET „ DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand

IRF7425

Abstract: MS-012AA
Contextual Info: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

IRF5800

Abstract: IRF5803 SI3443DV sot-23 Marking 3D Switching Diode SOT23 Marking 3D Switching Diode SOT23 Marking 3J MARKING CODE 88 TSOP-6
Contextual Info: PD-94015 IRF5803 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

Contextual Info: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from

F7101

Abstract: IRF7101 30V 10.5A p-channel MOSFET irf7240pbf
Contextual Info: PD- 95253 IRF7240PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description S These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

IRF MOSFET 10A P

Abstract: IRF5810 IRF5850 IRF5851 IRF5852
Contextual Info: PD - 95469A IRF5810PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free Description l l VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A These P-channel HEXFET® Power MOSFETs from

MOSFET IRF7425

Abstract: IRF7425 MS-012AA
Contextual Info: PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from

IRF5820

Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Contextual Info: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

IRF 511 MOSfet

Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Contextual Info: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier

IRF Power MOSFET code marking

Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
Contextual Info: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

4407p

Abstract: AF4407
Contextual Info: AF4407P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Contextual Info: AP9973GS/P RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D Single Drive Requirement 60V RDS ON ID Surface Mount Package 80m 14A G S Description The Advanced Power MOSFETs from APEC provide the

3020 transistor

Abstract: 4707 N Channel MOSFETs MPM3002 MPM3012 P channel MOSFET 10A schematic P-channel MOSFET 100V, 10 Amps p-channel power mosfet 14A S 170 MOSFET TRANSISTOR P-channel MOSFET 100V, 20 Amps
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

Contextual Info: SENSITRON SEMICONDUCTOR SHD230409 TECHNICAL DATA DATA SHEET 721, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.22 Ohm MOSFET œ Isolated and Hermetically Sealed œ Simple Drive Requirements MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

shd224702

Contextual Info: SHD244702 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4190, REV. A LOW RDS HERMETIC POWER MOSFET - P-CHANNEL FEATURES: • 60 Volt, 0.015 Ohm, 50A MOSFET • Isolated Hermetic Package • Ultra Low RDS on • Characterized at VGS of 4.5V MAXIMUM RATINGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD244702 TECHNICAL DATA DATA SHEET 4190, REV. - LOW RDS HERMETIC POWER MOSFET - P-CHANNEL FEATURES: • 60 Volt, 0.015 Ohm, 50A MOSFET • Isolated Hermetic Metal Package • Ultra Low RDS on • Characterized at VGS of 4.5V MAXIMUM RATINGS

Si2303CDS

Contextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

ap4405

Abstract: AP4405GM 4405GM
Contextual Info: AP4405GM RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Lower On-resistance D D S S S -30V RDS ON 8.2mΩ ID ▼ Fast Switching Characteristic SO-8 BVDSS G -14A Description

Contextual Info: AP6679GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D D Low On-resistance D D Fast Switching Characteristic G RoHS Compliant SO-8 S BVDSS -30V RDS ON 9m ID -14A S S Description

AP6679GM

Contextual Info: AP6679GM Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D ▼ Fast Switching Characteristic G S SO-8 BVDSS -30V RDS ON 9mΩ ID -14A S S Description