P-CHANNEL MOSFET 50V, 10 A RDS Search Results

SMS840

Abstract: MosFET
Contextual Info: SMS840 0.13A , 50V , RDS ON 10 Ω P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Low On-Resistance : 10Ω Low Input Capacitance: 30PF Low Out Put Capacitance : 10PF

SSF84W

Abstract: MosFET
Contextual Info: SSF84W -0.13A , -50V , RDS ON 10Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for

Contextual Info: MOSFET SMD Type P-Channel Enhancement Mode MOSFET BSS84 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 ● ID = -0.13 A 0.4 3 ● VDS V = -50V 1 0.55 ● RDS(ON) ≤ 10Ω (VGS = -5V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .

TH 2190 mosfet

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VSH-2 HIGH-SPEED SWITCHING USE ; FS5VSH-2 OUTLINE DRAWING Dimensions in mm 10.5MAX. ! I 0.8 \ - 1. i o • 2.5V DRIVE • VDSS . 100V • rDS ON (MAX) .0.440

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-2 HIGH-SPEED SWITCHING USE FS10ASH-2 • 2.5V DRIVE • VDSS . •100V • rDS ON (MAX) . • I D .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10SMH-2 HIGH-SPEED SWITCHING USE FS10SMH-2 OUTLINE DRAWING Dimensions in mm • 2.5V DRIVE • VDSS .100V • rDS ON (MAX) . 0.21 Q

z102b

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70SM-2 HIGH-SPEED SWITCHING USE ! FS70SM-2 OUTLINE DRAWING Dimensions in mm 4 .5 15.9M AX . 5.45 5 .4 5 0.6 h |h • 10V DRIVE • VDSS .100V • rDS ON (MAX) . 2 0 m ii

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VSJ-2 HIGH-SPEED SWITCHING USE FS5VSJ-02 • 4V DRIVE • VDSS . • rDS ON (MAX) . 100V 0.4Q • ID .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70SMH-2 HIGH-SPEED SWITCHING USE FS70SMH-2 • 2.5V DRIVE • VDSS .100V • rDS ON (MAX) . 19mil • I d . 70 A

fs70kmh-2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70KMH-2 HIGH-SPEED SWITCHING USE FS70KMH-2 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.3 ± 0 .2 • 2 .5 V D R IV E • VD S S . • rDS ON (MAX) .

C1027

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE FS30KMH-2 • 2 .5 V D R IVE • VDSS . •100V • rDS ON (MAX) . 93m£2 • I D .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-6 HIGH-SPEED SWITCHING USE FS10KM-6 OUTLINE DRAWING Dimensions in mm 10 ± 0 3 2,8 t 0.2 w •ig ¿ • V d s s . 300V GATE DRAIN SOURCE • rDS ON (MAX) .0.680

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30ASJ-2 HIGH-SPEED SWITCHING USE FS30ASJ-02 * * • 4V DRIVE • VD S S .100V • rDS ON (MAX) . 84mQ

Contextual Info: MITSUBISHI Neh POWER MOSFET F S 1 0 S M H -2 HIGH-SPEED SWITCHING USE FS10SMH-2 OUTLINE DRAWING Dimensions in mm .4.5. 1.5 4.4 4 Q w r 2.5V DRIVE V dss .1 0 0 V rDS ON (M A X ) . 0.21 Î Ï

710a

Abstract: FS3KM-14A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS3KM-14A HIGH-SPEED SWITCHING USE FS3KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0 . 3 V d s s 2.8 ± 0 . 2 . 7 0 0 V rDS ON (MAX) .4.75Í1

FS5UM-16A

Abstract: 71Q1
Contextual Info: MITSUBISHI Neh POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A OUTLINE DRAWING Dimensions in mm V d s s .800V rDS ON (MAX) . 2.3Í1

mosfet n channel 200V 50A to220

Abstract: 1620G
Contextual Info: MITSUBISHI Neh POWER MOSFET FS3UM-14A HIGH-SPEED SWITCHING USE FS3UM-14A OUTLINE DRAWING Dimensions in mm 4.5 1.3 LU U LU qw e 0 ' q w e r q O- V d s s . 700V rDS ON (MAX) .4.75Í1

FS2KM-18A

Abstract: B1037 FS2KM fs2km18a
Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 Vd s s 2.8 ± 0 .2 . 9 0 0 V rDS ON (MAX) .7.3Í1

FS7KM-14A

Abstract: cc1017
Contextual Info: MITSUBISHI Neh POWER MOSFET FS7KM-14A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 V d s s . 700V rDS ON (MAX) . 1 82Í1

K775

Abstract: B1470 FS20UM-5 sk 3005 FS20UM MAX240 mitsubishi marking diode ct 2405
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20UM-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING FS20UM-5 Dimensions in mm 4.5 1.3 0.5 2.6 ffi o@ © © GATE © DRAIN © SOURCE ® DRAIN • Vd s s •2 5 0 V . • rDS ON (MAX) 0 . 1 9 Í2 • I D .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30UM-2 HIGH-SPEED SWITCHING USE FS30UM-2 • 10V DRIVE • VDSS .100V • rDS ON (MAX) . 100mi2 • I d . 30A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VS-16A HIGH-SPEED SWITCHING USE FS5VS-16A OUTLINE DRAWING Dimensions in mm • V dss . 800V • rDS ON (MAX) . 2.3Q