P-CHANNEL MOSFET 500V Search Results

OM12P10SA

Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
Contextual Info: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •

C1550

Abstract: p-channel 250V power mosfet
Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing

Contextual Info: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET

620 tg diode

Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced

circuit diagram of mosfet based smps power supply

Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
Contextual Info: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The

p-channel 250V power mosfet

Abstract: C1550 TC1550 TC1550TG-G P-channel mosfet 500V
Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced

Dn5dp

Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced

OM8P20A

Abstract: OM2P50A 3ssr
Contextual Info: O M NI RE L CORP H3£ ]> t>7a^0?3 H• 00DGS24 OMNI OM2P50A OM8P2QA POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-254 PACKAGE ^ 200V/500V, Up To 8 Amp; P-Channel MOSFET^ FEATURES D O • Isolated Hermetic Metal Package • P-Channel • Fast Switching, Low Drive Current

400v p-channel mosfet

Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQD3P50TM_F085

Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Piezoelectric 1Mhz

Abstract: p-channel 250V power mosfet P-channel Dual MOSFET VGS -25V high voltage piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G 10nF 250v P-channel MOSFET VGS -25V
Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode normally-off transistors

audio Amp. mosfet 1000 watt

Abstract: OM8P20A QM803 OM7P50A
Contextual Info: OMNI REL .CÖRP IME 0 I 1,70^073 00005^2 T I OM7P50A OM8P2QA POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-254 PACKAGE T ^ wêssêsiêu 200V/500V, UpTo 8, Amp*, P-Channel MOSFET v- -‘ A - - -* ^ ~ v'J} J, FEATURES Isolated Hermetic Metal Package P-Channel Fast Switching, Low Drive Current

FQPF1P50

Contextual Info: QFET TM FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Piezoelectric 1Mhz

Abstract: piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G
Contextual Info: TC1550 Initial Release N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode normally-off transistors

FQD1P50

Abstract: FQU1P50
Contextual Info: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

fqu1p50

Contextual Info: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Contextual Info: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB3P50 / FQI3P50 August 2000 QFET TM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQP3P50

Contextual Info: FQP3P50 August 2000 QFET TM FQP3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

fqp3p50

Contextual Info: FQP3P50 August 2000 QFET TM FQP3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQP1P50

Contextual Info: FQP1P50 June 2000 QFET TM FQP1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQPF1P50 June 2000 QFET TM FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQP3P50 August 2000 QFET FQP3P50 TM 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to